Tokyo Electron Limited

Noriyuki Iwabuchi

Takeshi Yokouchi

Shigeaki Kato

Hiroshi Nakamura

Seiichi Kaise

Eiji Hirose

Akira Obi

Shingo Suzuki

Mariko Shibata

Chishio Koshimizu

Jun Hirose

Kazuki Denpoh

Hiroyuki Takahashi

Satoshi Toda

Tetsuro Takahashi

Shosuke Endoh

Koichi Nagakura

Kazunori Kazama

Tomoya Okubo

There is provided a substrate processing apparatus of performing a predetermined substrate process on a plurality of target substrates under a vacuum atmosphere, including: a plurality of processing parts each configured to perform the substrate process on each of the plurality of target substrates; a gas supply mechanism configured to supply a processing gas to each of the plurality of processing parts; a single exhaust mechanism configured to exhaust the processing gas within the plurality of processing parts; and a control part configured to control the single exhaust mechanism to collectively exhaust the processing gas within the plurality of processing parts, and control the gas supply mechanism to separately supply the processing gas into each of the plurality of processing parts such that a difference between internal pressures of the plurality of processing parts is prevented.

Substrate processing apparatus, substrate processing method and storage medium

A substrate processing method is used for a substrate processing system having a substrate processing device and a substrate transfer device. The substrate processing method includes a substrate transfer step of transferring a substrate and a substrate processing step of performing a predetermined process on the substrate. The substrate transfer step and the substrate processing step include a plurality of operations, and at least two operations among the plurality of the operations are performed simultaneously. Preferably, the substrate processing device includes an accommodating chamber, a mounting table placed in the accommodating chamber to be mounted thereon the substrate, and a heat transfer gas supply line for supplying a heat transfer gas to a space between the substrate mounted on the mounting table and the mounting table.

Substrate processing method, system and program

A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.

Plasma processing apparatus, focus ring, and susceptor

First and second pressure sensorsandthat perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamberof an etching device. A pressure controllerselects optimal pressure data in correspondence to the pressure inside the process chamber from the pressure data provided by the first and second pressure sensorsand. It also analyzes the selected pressure data at a resolution selected in correspondence to the pressure inside the process chamberand thus obtains pressure data achieving a predetermined data density. The pressure controllercontrols a pressure control valveso as to ensure that the pressure data match preset pressure data.

Pressure control method and processing device

Growing community of inventors

Miyagi-gun, Japan

Noriyuki Iwabuchi