Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Noriyuki Isobe

Yuji Takebayashi

Kenichi Suzaki

Atsushi Hirano

Takeshi Kasai

Koichi Oikawa

Hiroshi Ashihara

Kenji Kameda

Hirohisa Yamazaki

Masakazu Shimada

Kosuke Takagi

Ryuichi Nakagawa

Yoshitaka Kawahara

Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500&#xb0; C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.

Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

According to one aspect of the technique described herein, there is provided a technique including: forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes sequentially performing: (a) supplying source gas to a substrate accommodated in a reaction tube; (b) exhausting the source gas remaining in the reaction tube through an exhaust pipe connected to the reaction tube; (c) supplying a reactive gas reacting with the source gas to the substrate; and (d) exhausting the reactive gas remaining in the reaction tube through the exhaust pipe, wherein at least in (a) and (c), a temperature of the reaction tube is set to a first temperature lower than a thermal decomposition temperature of the source gas and higher than a condensation temperature of the source gas and a temperature of the exhaust pipe is set to a second temperature equal to or higher than the first temperature.

Method of manufacturing semiconductor device having higher exhaust pipe temperature and non-transitory computer-readable recording medium

A method of manufacturing a semiconductor device includes (a) under a first process condition, supplying a purge gas containing hydrogen and oxygen to a process chamber from which an oxide film adhering to an internal member is removed by a cleaning gas containing a halogen element and exhausting the purge gas from the process chamber; and (b) under a second process condition differing from the first process condition, supplying the purge gas to the process chamber and exhausting the purge gas from the process chamber after performing (a), wherein the first process condition is a process condition under which reactivity of the halogen element, which remains within the process chamber when the cleaning gas is supplied to the process chamber, with the purge gas is higher than reactivity of the halogen element with the purge gas under the second process condition.

Method of manufacturing semiconductor device and recording medium

There is provided a technique that includes: a process chamber accommodating substrate; a storage tank including bottom portion having recess and wall portion and storing liquid precursor; a vaporizing part vaporizing the stored liquid precursor to generate precursor gas; a supply part supplying the generated precursor gas to the process chamber; a sensor disposed in the recess and detecting liquid level of the stored liquid precursor; a replenishment part replenishing the liquid precursor in the storage tank; and a controller controlling the supply part to supply the precursor gas to the process chamber to perform a substrate processing process for processing the substrate, and controlling, each time when the substrate processing process is performed a predetermined number of times, the replenishment part, based on the detected liquid level, to replenish the liquid precursor in the storage tank so that the liquid level becomes a predetermined level.

Substrate processing apparatus, liquid precursor replenishment system, and method of manufacturing semiconductor device

Provided is a technique for forming a film having a desired stress on a substrate. A method of manufacturing a semiconductor device includes: forming a film having a predetermined stress on a substrate by controlling a ratio of a thickness of a first film having compressive stress to a thickness of a second film having tensile stress by performing: (a) supplying an organic source gas containing a first element and a reactive gas containing a second element to the substrate to form the first film containing the first element and the second element; and (b) supplying an inorganic source gas containing the first element and the reactive gas to the substrate to form the second film containing the first element and the second element.

Method of manufacturing semiconductor device

A film is efficiently formed by sufficiently supplying a source gas to substrates accommodated in a process chamber, and the uniformity of a film formed on the substrates is improved. A method of a semiconductor device manufacturing includes (a) supplying a source gas to an upper region of a process chamber through a first gas supply hole disposed at a front end of a first nozzle disposed in a lower region of the process chamber where the source gas is not pyrolyzed; (b) supplying the source gas to substrates disposed in the lower region and a middle region of the process chamber through a plurality of second gas supply holes of a second nozzle; and (c) supplying a reactive gas to substrates disposed in the lower region, the middle region and the upper region of the process chamber through a plurality of third gas supply holes of a third nozzle.

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Toyama, Japan

Noriyuki Isobe