Showa Denko K.k.

Noriyuki Aihara

Noriyoshi Seo

Noritaka Muraki

Ryouichi Takeuchi

Atsushi Matsumura

Akira Uzawa

A method for manufacturing a tunnel junction layer using organic vapor phase deposition, the method including: a first process that supplies a first material gas containing a group III element, a second material gas containing a group V element, and a third material gas containing a dopant of a first conductivity type, onto a compound semiconductor layer on which the tunnel junction layer is to be laminated; a second process that stops supplying the first material gas, the second material gas and the third material gas, and supplies a fourth material gas containing a dopant of a second conductivity type opposite to the first conductivity type; and a third process that continues to supply the fourth material gas, and further supplies a fifth material gas containing a group III element and a sixth material gas containing a group V element.

Method for manufacturing tunnel junction layer

A light-emitting element layerincludes: an n-type contact layer; a first light-emitting layer; a tunnel junction layer; a second light-emitting layer; and a p-type contact layerlaminated in this order. The first light-emitting layerand the second light-emitting layeremit light of the same wavelength. The tunnel junction layerincludes: a p-type tunnel layermade of AlGaAs containing p-type impurities (C); and an n-type tunnel layermade of GaInP containing n-type impurities (Te). A highly n-type impurities-doped layerhaving a higher concentration of n-type impurities than the n-type tunnel layeris arranged between the p-type tunnel layerand the n-type tunnel layer

Light-emitting diode and method for manufacturing tunnel junction layer

A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface, and a peripheral region of the top surface of the mesa structure. The protective film includes an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. A continuous electrode film contacts the exposed compound semiconductor layer, covers the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent conductive film is formed between a reflecting layer and the layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window.

Light-emitting diode and method of manufacturing the same

The invention provides a light-emitting diode, a light-emitting diode lamp, and an illumination device which emit infrared light with both high-speed response and high output performance. The invention relates to a light-emitting diode including a light-emitting portion which has an active layer of a quantum well structure, in which a well layer made of a compound semiconductor having a composition formula (InGa)As (0&#x2266;X1&#x2266;1) and a barrier layer made of a compound semiconductor having a composition formula (AlGa)As (0&#x2266;X2&#x2266;1) are alternately laminated, and a first clad layer and a second clad layer sandwiching the active layer, an electric current diffusion layer which is formed on the light-emitting portion, and a functional substrate which is bonded to the electric current diffusion layer, a light-emitting diode lamp, and an illumination device. The first and second clad layers are made of a compound semiconductor having a composition formula (AlGa)InP (0&#x2266;X3&#x2266;1, 0&#x3c;Y1&#x2266;1), and when a single well layer and a single barrier layer form a single paired layer, the number of paired layers is equal to or smaller than 5.

Light-emitting diode, light-emitting diode lamp, and illumination device

A light-emitting diode and method of manufacturing the same, including a flat portion and a mesa structure including an inclined side surface formed by wet etching and a top surface. A protective film and an electrode film sequentially cover a part of the flat portion and at least a part of the mesa structure, the protective film including an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. The electrode film is a continuous film that contacts the surface of the exposed compound semiconductor layer, covers a portion of the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent film is formed between a reflecting layer and a compound semiconductor layer. A through-electrode is provided in a range of the transparent film which overlaps the light emission hole.

Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlGa)As (0&#x2266;X1&#x2266;1) and a barrier layer which comprises a composition expressed by the composition formula of (AlGa)As (0&#x3c;X2&#x2266;1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlGa)InP (0&#x2266;X3&#x2266;1, 0&#x3c;Y1&#x2266;1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.

Light emitting diode, light emitting diode lamp, and illuminating apparatus

A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InGa)As (0&#x2266;X1&#x2266;1) and barrier layers having the composition: (AlGa)As (0&#x2266;X2&#x2266;1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlGa)As (0&#x2266;X3&#x2266;1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlGa)InP (0&#x2266;X4&#x2266;1, 0&#x3c;Y&#x2266;1); and a light-emitting diode lamp and a lighting device using the same.

Light-emitting diode, light-emitting diode lamp and lighting device

Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlGa) As (0&#x2266;X&#x2266;1) and a barrier layer which comprises a composition expressed by the composition formula of (AlGa) As (0&#x3c;2&#x2266;1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlGa)InP (0&#x2266;X&#x2266;1, 0&#x3c;Y&#x2266;1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.

Growing community of inventors

Chichibu, Japan

Noriyuki Aihara