Fuji Xerox Co., Ltd.

Noriyoshi Takahashi

Shigeru Yagi

Yuzuru Fukuda

Masayuki Nishikawa

Masato Ono

Ken-ichi Karakida

Kenichi Karakida

Te Nam Roh

Masaki Yokoi

Yumiko Komori

Masahito Tokuhiro

Katsumi Nukada

Masakazu Iijima

Kazuya Hongo

Masaaki Suwabe

Emi Takahashi

Tetsu Torigoe

Hitoshi Takimoto

Teruo Sakai, Legal Representative

Teigen Ri

The present invention provides a toner for developing an electrostatic latent image including: toner mother particles containing a binder resin and a colorant; and manganese compound particles having a &#x3b3;-type crystalline structure, the production method thereof, and a developer containing the toner.

Toner for developing electrostatic latent image, method for manufacturing toner, and developer for developing electrostatic latent image

Gallium phthalocyanine halide crystals wherein a part of the crystals are changed into hydroxygallium phthalocyanine is disclosed. A method for preparing gallium phthalocyanine halide crystals wherein gallium phthalocyanine halide crystals are brought into contact with water and a part of the crystals are changed into hydroxygallium phthalocyanine is also disclosed. An electrophotographic photoreceptor formed by laminating at least a charge generating layer and a charge transporting layer successively on a conductive support wherein the charge generating layer contains gallium phthalocyanine halide crystals An which a part of the crystals are changed into hydroxygallium phthalocyanine is also disclosed.

Gallium phthalocyanine halide crystals, method for preparing the same

A process for producing an electrophotographic photoreceptor comprising the steps of forming a photoconductive layer on a conductive substrate in a reaction chamber, and after the photoconductive layer is formed, forming a surface protection layer on the photoconductive layer by introducing into the reaction chamber a gaseous mixture comprising (i) a first component, fluorohydrocarbon gas, and (ii) a second component silicon, hydride gas, or a hydrocarbon gas and/or hydrogen gas and decomposing the gaseous mixture by glow discharge, wherein the surface protection layer thus formed comprises amorphous silicon carbide when the second component is a silicon hydride gas or amorphous carbon when the second component is a hydrocarbon gas and/or hydrogen gas. The surface protection layer exhibits sufficient hardness to protect the photoconductive layer from frictional scratches and other related damage.

Process for making an electrophotographic photoreceptor having

An electrophotographic photoreceptor having excellent dark resistance is disclosed, which comprises a photoconductive layer and a surface layer formed successively on a conductive substrate, wherein the photoconductive layer mainly comprises hydrogen-containing amorphous silicon, and the surface layer comprises amorphous carbon which contains not more than 50 atomic percent of hydrogen.

Electrophotographic photoreceptor having conductive layer and amorphous

An electrophotographic photoreceptor comprising a conductive support having thereon an amorphous silicon photoconductive layer and a surface protective layer is disclosed, the surface protective layer having a laminated structure comprised of a lower layer comprising nitrogen-containing amorphous silicon and an upper layer comprising amorphous carbon. The photoreceptor causes no image deletion even after repeated use under a high temperature and high humidity condition and exhibits excellent scratch resistance.

Electrophotographic photoreceptor with two part surface layer

An electrophotographic photoreceptor having a light-sensitive layer formed on an electrically conductive substrate is disclosed, which contains at least a layer chiefly made of a germanium-containing amorphous carbon as a light-sensitive layer or an anti-reflection layer.

Electrophotographic photoreceptor with amorphous carbon containing

An electrophotographic photoreceptor having a photosensitive layer essentially made of amorphous silicon formed over a support, and a surface layer made of amorphous silicon formed over the photosensitive layer. The amorphous silicon of the photosensitive layer includes boron of 0.1-5 ppm, and the amorphous silicon of the surface layer includes nitrogen. The layers of material formed over the support include a charge blocking layer.

Electrophotographic photoreceptor with overlayer of amorphous Si with N

A photoreceptor for electrophotography, comprising: a photoconductive layer substantially composed of amorphous silicon, and first, second and third surface layers substantially composed of amorphous silicon added with nitrogen atom, those layers being formed on a support. The thickness d.sub.1, d.sub.2 and d.sub.3 of the first, second and third surface layers satisfies the following relation: d.sub.2 &gt;d.sub.1 and d.sub.2 &gt;d.sub.3, and the nitrogen concentrations c.sub.1, c.sub.2 and c.sub.3 of said first, second and third surface layers satisfy the following relation: c.sub.3 &gt;c.sub.2 &gt;c.sub.1.

Photoreceptor for electrophotography

An electrophotographic photoreceptor comprising a photoconductive layer, a first surface layer and a second surface layer formed in sequence on a support, said photoconductive layer being substantially composed of amorphous silicon, and each of said first and second surface layers being substantially composed of nitrogen-doped amorphous silicon, the concentration of nitrogen atoms in the second surface layer being higher than that in the first surface layer. The photoconductive layer is doped with atoms of an element of group III, or in at least a part of the photoconductive layer doped with germanium atoms in place of the element of group III.

Electrophotographic photoreceptor having surface layers

A positively and negatively chargeable electrophotographic photoreceptor is disclosed, comprising a substrate having thereon a charge blocking layer, an amorphous silicon photoconductive layer, and an amorphous silicon nitride surface layer provided in that order, wherein the charge blocking layer comprises of amorphous silicon nitride and the amorphous silicon photoconductive layer comprises of an i-type amorphous silicon containing 0.05 to 5.0 ppm of boron.

Positively and negatively chargeable electrophotographic photoreceptor

An electrophotographic photoreceptor having excellent dark resistance is disclosed, which comprises a photoconductive layer and a surface layer formed successively on a conductive substrate, wherein the photoconductive layer mainly comprises hydrogen-containing amorphous silicon, and the surface layer comprises amorphous carbon which contains not more than 50 atomic percent of hydrogen. The surface layer contains phosphorous or boron as a dopant and/or comprises two sublayers where the sublayer has a lower hydrogen content than the lower sublayer.

Electrophotographic photoreceptor having doped and/or bilayer amorphous

An electrophotographic photoreceptor comprising a support, a charge blocking layer, a first photoconductive layer composed of at least amorphous silicon, a second photoconductive layer composed of at least boron-containing amorphous silicon, a surface layer composed of at least nitrogenated amorphous silicon, the surface layer having an interface for contacting the second photoconductive layer, the surface layer including a lower region corresponding to an area not greater than approximately 100 .ANG. away from the interface, the lower region having a ratio of not less than 0.5 parts of nitrogen atoms for one part of silicon atoms, the nitrogen ratio of the lower region and the boron content of the second photoconductive layer corresponding to the relation B.gtoreq.10.sup.(9N-5.5) where B is the boron content in PPM and N is the ratio of nitrogen atoms to silicon atoms.

Growing community of inventors

Kanagawa, Japan

Noriyoshi Takahashi