Piezo Studio Inc.

University of Yamanashi

Inter-university Research Institute Corporation High Accelerator Research Organization

Noritoshi Kimura

Shoji Kakio

Masaya Nohara

A surface acoustic wave device includes a piezoelectric substrate formed from a CaTa(GaAl)SiOsingle crystal, and an interdigital electrode formed on the surface of the piezoelectric substrate and formed from Al. The interdigital electrode is configured to generate a Love-wave-type SH wave on the surface of the piezoelectric substrate. A normalized film thickness obtained by dividing the film thickness of the interdigital electrode by the wavelength of the Love-wave-type SH wave is 0.16 or less.

Surface acoustic wave device

An oscillation circuit includes an oscillator, first and second capacitors connected between two terminals of the oscillator, and an amplification circuit having an input terminal connected to a connecting point between the oscillator and the first capacitor and an output terminal connected to a connecting point between the first capacitor and the second capacitor. The amplification circuit includes a first n-type transistor and a first p-type transistor respectively having source terminals, the connecting point of which is connected to the output terminal of the amplification circuit, a second p-type transistor connected to a gate terminal of the first n-type transistor, and a second n-type transistor connected to a gate terminal of the first p-type transistor.

Growing community of inventors

Miyagi, Japan

Noritoshi Kimura