Nippon Micrometal Corporation

Nippon Steel Chemical & Material Co., Ltd.

Nippon Steel & Sumikin Materials Co., Ltd.

Noritoshi Araki

Tomohiro Uno

Ryo Oishi

Daizo Oda

Teruo Haibara

Tetsuya Oyamada

Takashi Yamada

Motoki Eto

Kota Shimomura

Takumi Ookabe

There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a 'first element') and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a “second element”) so as to satisfy0.05≤x1≤3.0, and15≤x2≤700

AG alloy bonding wire for semiconductor devices and semiconductor device

There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (μm/μm) or more and 1.6 (μm/μm) or less.

Copper bonding wire for semiconductor devices and semiconductor device

The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.

Method for forming ball in bonding wire

Growing community of inventors

Saitama, Japan

Noritoshi Araki