Kabushiki Kaisha Toshiba

Noritake Oomachi

Naomasa Nakamura

Keiichiro Yusu

Sumio Ashida

Tsukasa Nakai

Takayuki Tsukamoto

Urara Ichihara, Legal Representative

Katsutaro Ichihara

Yoshio Ozawa

Junichi Wada

Kouji Matsuo

Yasuhiro Satoh

Tomotaka Ariga

Katsutaro Ichihara, Deceased

According to one embodiment, a memory element includes: a first electrode layer; a second electrode layer; and a memory layer provided between the first electrode layer and the second electrode layer, and the memory layer including a plurality of first oxide layers in a second oxide layer, a resistivity of each of the plurality of first oxide layers being higher than a resistivity of the second oxide layer.

Resistance change memory element and resistance change memory

A resistance change element includes a first conductive layer, a second conductive layer, and a memory layer. The memory layer is provided between the first conductive layer and the second conductive layer. The memory layer is capable of reversibly transitioning between a first state and a second state due to at least one of a voltage and a current supplied via the first conductive layer and the second conductive layer. A resistance of the second state is higher than a resistance of the first state. The memory layer includes niobium oxide. One of a (100) plane, a (010) plane, and a (110) plane of the memory layer is oriented in a stacking direction from the first conductive layer toward the second conductive layer.

Resistance change element and nonvolatile memory device

According to one embodiment, in a phase change optical disk which has a substrate and a multi-layered including an interference film, phase change recording film, interface film, and reflecting film, and in which information is reversibly recorded in or erased from the recording film by using light, an element (e.g., Ge or Te) forming the phase change recording film has segregation or a concentration distribution in the thickness direction of the recording film from a portion in contact with the phase change recording film.

Phase change recording medium

A phase-change optical recording medium has a recording film that brings about reversible phase-change between a crystalline phase and an amorphous phase upon irradiation with light and an interface film formed in contact with at least one surface of the recording film and comprising hafnium (Hf), silicon (Si), oxygen (O) and carbon (C).

Phase-change optical recording medium

In a single-sided, recordable/rewritable phase change optical recording medium having one or more layers, an interface layer adjacent to a phase change optical recording film contains at least Zr (zirconium), O (oxygen), and N (nitrogen), and further contains one or both of Y (yttrium) and Nb (niobium).

Optical recording medium, and information recording/playback apparatus and method using the medium

A Phase-change optical recording media includes a recording film that causes reversible phase-change between a crystalline phase and an amorphous phase on irradiation with light, and an interface film formed in contact with at least one surface of the recording film and containing Hf (hafnium), O (oxygen) and N (nitrogen).

Phase-change optical recording media

A phase-change optical recording medium has a first information layer including a phase-change optical recording film arranged in a position close to the light incident side, a second information layer including another phase-change optical recording film arranged in a position remote from the light incident side and an interlayer separating film arranged between the first information layer and the second information layer, in which at least one of the first information layer and the second information layer includes a noise reduction film in contact with the interlayer separating film. The noise reduction film is formed of SiOx (1&#x2266;x&#x2266;2) or SiOC.

A phase-change optical recording medium has a phase-change recording film to which recording and erasure can be reversibly performed by irradiation with light, and at least one dielectric film formed of a SiOC film containing Si, O and C, and having a carbon concentration within a range of between 0.1 and 30 atomic %.

An optical information recording medium includes a substrate, first information recording layer, and second information recording layer. The first information recording layer includes a recording film, first dielectric film whose complex index has a real part n, second dielectric film whose complex index has a real part n, and third dielectric film whose complex index has a real part n. Relationships n&#x3e;nand n&#x3e;nare satisfied.

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Yokohama, Japan

Noritake Oomachi