Canon Kabushiki Kaisha

Noritaka Ukiyo

Shoji Nishida

Masaaki Iwane

Katsumi Nakagawa

Yukiko Iwasaki

Masaki Mizutani

Tatsumi Shoji

Takehito Yoshino

Kiyofumi Sakaguchi

Tetsuro Saito

Yasue Sato

Yoshihiro Yanagisawa

Kazuhiro Sando

Makoto Iwakami

Takao Yonehara

Isao Tanikawa

Hiroshi Sato

Shunichi Ishihara

Osamu Taniguchi

Takao Ogura

Yasuyoshi Takai

Koichi Takasaki

A radiation tube includes an enclosure having an opening portion, an electron source disposed inside the enclosure, a target unit configured to generate radiation by being bombarded with electrons emitted from the electron source, and a front shield disposed on the opening portion and joined to the target unit. The front shield has a slit-shaped opening that shields some of the radiation radiated from the target unit. The radiation is radiated through the opening in the shape of a fan beam.

Radiation tube and radiation inspection apparatus

Provided is an X-ray generating tube with improved withstand voltage property by a simple structure, the X-ray generating tube including a cathode connected to one opening of an insulating tube and an anode connected to the other opening, in which a resistive film having a lower sheet resistance value than that of the insulating tube is disposed on an outer periphery of the insulating tube, and the cathode and the anode are electrically connected to each other via the resistive film.

X-ray generating tube, X-ray generating apparatus and X-ray imaging system using the same

Provided is a radiation generating tube in which an insulating tube is prevented from being damaged by heat generation of a target or an electron emitting source during drive. Extending portions extending along an outer periphery of an insulating tube are provided to a cathode and an anode, respectively, and the insulating tube is joined to the extending portions to enhance the strength of joint portions. At the same time, the insulating tube can be deformed easily by setting a tube wall thickness of the insulating tube at a central portion in a longitudinal direction to be smaller than a tube wall thickness of an opening end, and thus the concentration of thermal stress on the joint portions caused by an increase in temperature of the cathode and the anode is alleviated.

Radiation generating tube, and radiation generating apparatus and radiation imaging system using the same

A radiation generating tube includes an electron emitting source configured to emit an electron beam; a target configured to generate radiation when the target is irradiated with the electron beam; a rear shield body having a tube-shaped electron passage with openings thereof at each end of the passage, and being located at the side of the electron emitting source with respect to the target, a first opening of the passage facing the electron emitting source and being separated from the electron emitting source, a second opening of the passage facing the target; and a brazing material joining the rear shield body with a peripheral edge of the target, at a position separated from the second opening. A closed space isolated from the electron passage is provided between the target and the rear shield body.

Radiation generating tube, and radiation generating device and apparatus including the tube

There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidificationis cut such that a normal line of a principal surfaceof a multicrystalline silicon substrateis substantially perpendicular to a longitudinal direction of crystal grainsof the multicrystalline silicon ingot made by directional solidification

Process of producing multicrystalline silicon substrate and solar cell

In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

Liquid phase growth process, liquid phase growth system and substrate member production method

A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.

Wafer cassette, and liquid phase growth system and liquid-phase growth process which make use of the same

An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

Apparatus for producing semiconductor thin films on moving substrates

In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

Anodizing apparatus

Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.

Liquid phase growth methods and liquid phase growth apparatus

A method of producing a semiconductor thin film is provided. While a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. According to these methods, it is possible to peel the semiconductor thin film away from the substrate without damage and to hold the substrate without contamination.

Method of producing semiconductor thin film and method of producing solar cell using same

The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.

Growing community of inventors

Atsugi, Japan

Noritaka Ukiyo