Oki Electric Industry Co., Ltd.

Oki Semiconductor Co., Ltd.

Noritaka Anzai

Makoto Terui

Shinji Ohuchi

Yoshimi Egawa

A lead frame type of semiconductor apparatus includes a die pad on which a semiconductor chip is mounted; ground terminals which are to be grounded; power supply terminals which are connected to a power supply; inner leads connected to the ground terminals and power supply terminals, in which a pair of adjacent inner leads for power supply terminal and ground terminal are extended inwardly; a chip capacitor mounting pad which is provided at inner ends of the extended inner leads; and a chip capacitor which is mounted on the chip capacitor mounting pad so that a decoupling capacitor is provided.

Semiconductor apparatus with decoupling capacitor

A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposite to the first surface; a first through wiring penetrating through the semiconductor substrate from the first surface to the second surface; an antenna formed on the first surface and electrically connected to the first through wiring; a semiconductor element formed on the second surface and electrically connected to the first through wiring; a first sealing layer formed on the second surface to cover the semiconductor element; and a first external terminal having one end portion exposed from the first sealing layer and the other end portion electrically connected to the semiconductor element.

Semiconductor device and method of producing the same

A semiconductor device includes a semiconductor substrate having a main surface, the main surface including a first and second areas formed with a high-frequency circuit element, and a third area located around the first and second areas and formed with a low-frequency circuit element. The semiconductor device also includes a sealing resin which covers the main surface; a plurality of first external terminals which are formed above the third area and which are electrically connected to the high-frequency circuit element, the first external terminals protruding from the surface of the sealing resin. The semiconductor device further includes a plurality of second external terminals which are formed above the third area and which are electrically connected to the low-frequency circuit element, the second external terminals protruding from the surface of the sealing resin.

Semiconductor device that suppresses variations in high frequency characteristics of circuit elements

A semiconductor device includes a semiconductor chip, electrodes pads, first and second insulating layers, first and second conductive patterns and external terminals. The electrode pads are formed on a first area of a main surface of the semiconductor chip. The first insulating layer is formed on the first and second areas of the semiconductor chip and exposes the electrode pads. The first conductive pattern transfers a signal and is formed on the first insulating layer. A second insulating layer is formed on the first conductive pattern and the first insulating layer. The second conductive pattern is formed on the second insulating layer and provides a ground potential. The external terminals are formed on the first and second patterns at the second area.

Semiconductor device with signal line having decreased characteristic impedance

In a semiconductor device having a WCSP type construction package, to increase inductance without increasing further an area conventionally occupied by a coil. A pseudo-post partcomprising a magnetic body is extended in a direction perpendicular to a main surfaceof a semiconductor chipon a second insulating layerof a WCSPA first conductive partand a second conductive partconstructed as square frames are respectively provided so as to surround the pseudo-post part, on respective top surfaces of a second insulation layer and a third insulating layerwhich are separated parallel to each other, in an extension direction of the pseudo-post part. A coilbeing a substantially spiral shape conductive path is formed from, the first conductive part, the second conductive part, and a connection partwhich electrically connects the one ends of the first and second conductive parts.

Semiconductor device and method for fabricating the same

A semiconductor device includes a semiconductor chip, electrodes pads, an insulating layer, first and second conductive patterns and external terminals. The electrode pads are formed on a first area of a main surface of the semiconductor chip. The insulating layer is formed on a second area of the semiconductor chip so as to expose the electrode pads. The first conductive pattern provides a ground potential and is formed on the insulating layer. The second conductive pattern transfers a signal. The second conductive pattern is formed on the insulating layer and located to partially surround the first conductive pattern. The external terminals are formed on the first and second patterns at the second area.

In a semiconductor device having a WCSP type construction package, to increase inductance without increasing further an area conventionally occupied by a coil. A pseudo-post partcomprising a magnetic body is extended in a direction perpendicular to a main surfaceof a semiconductor chip, on a second insulating layerof a WCSP. A first conductive partand a second conductive partconstructed as square frames are respectively provided so as to surround the pseudo-post part, on respective top surfaces of a second insulation layer and a third insulating layerwhich are separated parallel to each other, in an extension direction of the pseudo-post part. A coilbeing a substantially spiral shape conductive path is formed from, the first conductive part, the second conductive part, and a connection partwhich electrically connects the one ends of the first and second conductive parts.

A semiconductor device includes a semiconductor chip, electrodes pads, an insulating layer, first and second conductive patterns and external terminals. The electrode pads are formed on a first area of a main surface of the semiconductor chip. The insulating layer is formed on a second area of the semiconductor chip so as to expose the electrode pads. The first conductive patterns provide a ground potential and are formed on the insulating layer. The second conductive pattern transfers a signal. The second conductive pattern is formed on the insulating layer and located between the first conductive patterns. The external terminals are formed on the first and second patterns at the second area.

A resin-molded semiconductor device capable of preventing an adhesive from flowing out along conductive paths from where electronic parts are attached on the conductive paths when the electronic parts are fixed to the conductive paths of a semiconductor package. The semiconductor device comprises a semiconductor chip ( ), a plurality of conductive paths ( ) connected to the semiconductor chip through conductive wires ( ) extending from said chip, and an electronic part ( ) mounted in such a manner as to electrically connect to two pieces of the conductive paths through the intermediary of an adhesive showing fluidity before hardening and molded in one body the semiconductor chip. In the conductive path, a raised portion is provided to prevent the adhesive from flowing out along the conductive path in the longitudinal direction of the conductive path before the adhesive hardens.

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Tokyo, Japan

Noritaka Anzai