Semiconductor Process Laboratory Co., Ltd.

Noritada Satoh

Bunya Matsui

The invention relates to method of formation of an impurity region in a semiconductor layer by introducing a dopant impurity as a donor or an acceptor. The formation method comprises the steps of: mixing an impurity gas with a gas containing any one of H,and an inert gas, electrically discharging the mixed gas, diffusing impurities adhered to the surface of a semiconductor layer into the semiconductor layer, by introducing the discharged impurity gas to the surface of the semiconductor layer and at the same time accelerating ions of the gas containing any one of the H,and inert gases to irradiate the surface of the semiconductor layer and, by raising the temperature of the surface of the semiconductor layer, electrically activating the same.

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Yokosuka, Japan

Noritada Satoh