Fuji Electric Co., Ltd.

Daiichi Sankyo Company, Limited

Fuji Electric Corporate Research & Development Co., Ltd.

Fuji Electric Corporate Research and Developement Ltd.

Sankyo Company, Limited

Noritada Sato

Yasukazu Seki

Masashi Watanabe

Hiroshi Nagasawa

Masaya Yabe

Takashi Takita

Takahiro Okachi

Michiaki Kawahara

Gen Hasegawa

Osamu Ishiwata

Toshikazu Suzuki

Yoshitaka Nakamura

Makoto Yamaoka

Yasakazu Seki

Osamu Ishiwate

Masayoshi Jin

Tadahiro Takeda

Toshihiko Onoda

The present invention provides a method for producing an atropisomer of a pyrrole derivative having excellent mineralocorticoid receptor antagonistic activity, and an intermediate thereof. A method for producing an atropisomer of a pyrrole derivative using a compound represented by (B) [wherein Rrepresents a C1-C4 alkyl group, and Rrepresents a 2-hydroxyethyl group or a carboxymethyl group] as a production intermediate. 

Method for producing pyrrole derivative, and intermediate thereof

The present invention provides a production intermediate of an atropisomer of a pyrrole derivative having excellent mineralocorticoid receptor antagonistic activity, a method for producing the same, and a crystal thereof. A method for producing an atropisomer of a pyrrole derivative including a step of resolving a compound represented by the following general formula (I) [wherein Rrepresents a methyl group or a trifluoromethyl group, Rrepresents a hydrogen atom or a C1-C3 alkoxy group, and n represents an integer selected from 1 to 3] into its atropisomers, characterized by using an optically active amine having a cinchonine skeletal formula, and a crystal of (S)-1-(2-hydroxyethyl)-4-methyl-N-[4-(methylsulfonyl)phenyl]-5-[2-(trifluoromethyl)phenyl]-1H-pyrrole-3-carboxamide. 

Crystal of pyrrole derivative and method for producing the same

An optically active 4,4-di-substituted oxazolidine compound having the formula (I) 

Optically active 4,4-di-substituted oxazolidine derivative and method for producing same

A semiconductor-based radiation-detector element particularly adapted to neutron detection, and the method for making the same, in which a high sensitivity single-crystal semiconductor substrate has diffused therein at-least-one region of .sup.3 He gas, which remain resident therein, whereby, upon application of an inverse bias to the junction in the semiconductor substrate, the colliding of incident neutrons with the resident .sup.3 He gas results in a reaction which produces hole-electron pairs in the depletion layer within the semiconductor, those hole-electron pairs producing output electrical pulses which appear at the output terminals of the detector for utilization by detection and measuring apparatus connected to the semiconductor-based radiation-detector element.

Semiconductor-based radiation-detector element

A semiconductor-based radiation-detector element particularly adapted to neutron detection, and the method for making the same, in which a high sensitivity single-crystal semiconductor substrate has diffused therein at-least-one region of .sup.3 He gas, which remains resident therein, whereby, upon application of an inverse bias to the junction in the semiconductor substrate, the colliding of incident neutrons with the resident .sup.3 He gas results in a reaction which produces hole-electron pairs in the depletion layer within the semiconductor, those hole-electron pairs producing output electrical pulses which appear at the output terminals of the detector for utilization by detection and measuring apparatus connected to the semiconductor-based radiation-detector element.

A radiation or light detecting semiconductor element comprises a p-type monocrystalline silicon substrate having a high specific resistance of about 10,000 ohm-cm, a stopper layer formed in a part of a first principal surface of the substrate and diffused to provide a p-type conductivity material, an electrode diffusion layer of p.sup.+ type material formed in at least part of the remaining part of the first principal surface not provided with the stopper layer, so as to be diffused into an n-type conductivity material, a metal (silicon) oxide layer formed on substantially the entire first principal substrate surface, a first aluminum electrode provided through the metal oxide layer and electrically connected to the electrode diffusion layer, and a second electrode of laminated Cr-Ni-Au deposited electrically conductively on a second principal surface of the substrate. A method for producing the element is also disclosed.

Radiation or light detecting semiconductor element containing heavily

A semiconductor-based radiation detector comprising a semiconductor substrate and an amorphous semiconductor layer formed on one surface of the substrate, one electrode being applied to the substrate and one to the amorphous layer, the electrodes formed on the amorphous semiconductor layer consisting of closely spaced, interconnected conductive strips which are substantially uniformly arranged over the entire radiation-incident surface of the amorphous semiconductor layer whereby the electrostatic capacitance appearing between the electrodes of the detector is significantly reduced without significantly changing the area of the detector that responds to radiation.

Novel semiconductor-based radiation detector

A semiconductor device for detecting gamma radiation displaying superior linearity of response to radiation without showing any energy dependency even if the gamma rays have the high energy is formed using an annular depletion region surrounded by non-depletion regions. The size of the regions is selected so that the distance from the edge of the depletion to the most distant point of the non-depletion region is at least about equal to the mean range of the highest energy gamma ray to be measured.

Semiconductor device for detecting radiation

In the typical embodiments of the invention described in the specification, a radiation detector has a single crystal silicon substrate coated with an amorphous semiconductor film containing silicon and carbon, metal electrodes being provided. Amorphous layers are formed by a plasma CVD method using mixtures of monosilane gas and acetylene or tetrafluorocarbon gas at a pressure of 10 Torr with an applied voltage of 400-800 volts providing increased band gaps and higher resistivity to reduce current leakage.

Multilayer semiconductor device having an amorphous carbon and silicon

Crystalline silicon films are formed by exposing a film of amorphous silicon on a substrate to a glow discharge in the presence of an inert gas such as argon. Masks can be used to allow for selective crystallization of defined regions of the amorphous film.

Process for forming crystalline films by glow discharge

In the representative radiation detectors described in the specification, an amorphous silicon layer is grown on one or both of the opposed electrode surfaces of a single crystal silicon substrate and the amorphous silicon layer extends to the side surface of the substrate. The corresponding electrode is deposited on the amorphous silicon layer. Detectors may also be made using a single crystal of Ge, GeAs or CdTe with an amorphous layer of the same or another semiconductor material.

Growing community of inventors

Kanagawa, Japan

Noritada Sato