Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Joled Inc.

Panasonic Coproration

Norishige Nanai

Takayuki Takeuchi

Takaaki Ukeda

Akihito Miyamoto

Yasuo Kudoh

Toshikuni Kojima

Masao Fukuyama

Kenji Harada

Kazuhiro Watanabe

Kouhei Koresawa

Gosuke Sakamoto

Kenichi Morigaki

Soji Tsuchiya

Katsuhiro Nichogi

Toshihiko Sato

Yuka Hasegawa

Yosuke Mizokami

Masaya Ugaji

Tohru Saitoh

Takahiro Kawashima

Naohide Wakita

Kazunori Komori

Yasuyuki Shibano

In a lighting system, a wavelength-converting fiber includes a light inlet portion, a light outlet portion, and a wavelength-converting portion containing a wavelength-converting element. The wavelength-converting element may be excited not only by excitation light to produce a spontaneous emission of light having a longer wavelength than the excitation light but also by an amplified spontaneous emission of light. A first light source unit emits the excitation light. A second light source unit emits a seed light ray causing the wavelength-converting element that has been excited by either the excitation light Por the amplified spontaneous emission of light to produce a stimulated emission of light. An optical system makes the excitation light coming from the first light source unit and the seed light ray coming from the second light source unit incident on the light inlet portion. The output lens condenses outgoing light coming from the light outlet portion.

Lighting system

A light-emitting system includes an optical fiber, a first light source unit, a second light source unit, and a light-guiding member. The optical fiber includes a wavelength-converting portion containing a wavelength-converting element. The wavelength-converting element may be excited by excitation light to produce a spontaneous emission of light having a longer wavelength than the excitation light and may also be excited by an amplified spontaneous emission of light. The first light source unit makes the excitation light incident on the optical fiber. The second light source unit makes seed light, causing the wavelength-converting element that has been excited by either the excitation light or the amplified spontaneous emission of light to produce a stimulated emission of light, incident on the optical fiber. The light-guiding member guides the light coming from the optical fiber and lets the light emerge therefrom.

Light-emitting system

An operation switch includes: a capacitance sensor that generates three or more detection signals in response to approach or contact of an object to respective three or more electrodes; a determination circuit that determines whether or not the object is a living body based on one or more detection signals selected from the three or more detection signals, the one or more detection signals excluding a detection signal having a maximum intensity among the three or more detection signals; and a controller that, when the object is determined to be a living body, generates an operation signal for operating a predetermined device.

Operation switch, dressing table and mirror using capacitance sensor

A control switch for controlling a level of an operation of an apparatus among operating levels including first, second, and third operating levels includes: sensors each of which, in operation, senses an object, the sensors including first, second, and third sensors arranged along one direction, the first, second, and third sensors being assigned first, second, and third level values, respectively; an acquisition circuit that, in operation, acquires a moving velocity of the object along the direction with the first, second, and third sensors; a change circuit that, in operation, changes at least two of the first, second, and third level values according to the moving velocity; and a control circuit that, in operation, causes the apparatus to operate at an operating level corresponding to the level value assigned to one of the first, second, and third sensors which has sensed the object.

Control switch including sensors, acquisition circuit, change circuit, and control circuit

A thin film transistor according to the present disclosure including: a gate electrode above a substrate; a gate insulating layer covering the gate electrode; a semiconductor layer above the gate insulating layer; and a source electrode and a drain electrode which are above the gate insulating layer, and electrically connected to the semiconductor layer, in which the gate insulating layer includes a first area and a second area, the first area being above the gate electrode, the second area being different from an area above the gate electrode, and made of a same substance as the first area, and the first area has a higher density than a density of the second area.

Thin film transistor, organic EL light emitting device, and method of fabricating thin film transistor

In a method for producing a display panel, a base substrate having an upper surface on which an electrode is located is prepared. A first layer having a first opening overlapping with the electrode in plan-view is formed on the base substrate. A second layer having a second opening overlapping with the first opening in plan-view is formed on the first layer. The second opening has a smaller area than the first opening in plan-view. A wiring layer is formed in the first opening and the second opening, in contact with the electrode. The second layer includes a portion located on an upper surface of the first layer and a portion located in the first opening. The portion of the second layer located in the first opening covers an internal side surface of the first layer located around the first opening.

Method for producing display panel, and display panel

A method of manufacturing a display panel includes a sub-step of forming a photosensitive material layer for formation of a second layer on a first layer, a sub-step of disposing, over the photosensitive material layer, a photomask having a different degree of transparency in a first region and a second region thereof, the first region overlapping the photosensitive material layer, in plan view, at a location for formation of a second aperture, and the second region being a remainder of the photomask other than the first region, and a sub-step of exposing the photosensitive material layer via the photomask. In plan view, the area of the first region in the photomask is larger than the area of a first aperture in the first layer.

Method of fabricating display panel

A nanowire transistor according to the present invention includes: at least one nanowireincluding a core portionthat functions as a channel region and an insulating shell portionthat covers the surface of the core portion; source and drain electrodesand, which are connected to the nanowire; and a gate electrodefor controlling conductivity in at least a part of the core portionof the nanowire. The core portionis made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portionis made of an insulator including Si and functions as at least a portion of a gate insulating film.

Nanowire transistor and method for fabricating the same

In a display apparatus according to the present invention, a pixel is driven by using a thin film transistor () including an organic material in at least an active layer. The thin film transistor unit () and a display element unit () are laminated on a substrate () in this order, and a pixel electrode () formed on a substrate () side of the display element unit () also functions as a drain electrode of the thin film transistor (). Therefore, when an organic material is used for a transistor for driving a display apparatus, there is provided a display apparatus that can provide effective protection without increasing the number of constituent members.

Display apparatus

A field effect transistor according to the present invention has a semiconductor layer through which carriers injected from a source region travel toward a drain region, the semiconductor layer being formed from a composite material including an organic semiconductor material and nanotubes. The nanotubes may be nanotubes including plural ones joined with each other.

Field effect transistor and method of fabricating the same

A thin-film transistor () of the present invention comprises a semiconductor layer (), and a source region (), a drain region (), and a gate region () which formed on the semiconductor layer to be separated from each other. Said semiconductor layer is made of composite material, and said composite material comprises organic semiconductive material and at least one kind of inorganic material particles dispersed inside the organic semiconductive material.

Thin-film transistor including organic semiconductor and inorganic particles, and manufacturing method therefor

A thin film transistor of the present invention is a thin film transistor () having a semiconductor layer (), a source region () and a drain region () provided to be isolated from each other so as to mutually oppose the semiconductor layer. The semiconductor layer has &#x3c0;-conjugated organic semiconductor molecules as its main component. The &#x3c0;-conjugated organic semiconductor molecules are oriented so that &#x3c0; orbitals substantially oppose each other and that the molecular axis of the main chains is oriented to be inclined with respect to a direction of electric field in a channel formed in the semiconductor layer.

Thin-film transistor and method of fabricating same

The present invention provides a field effect transistor that includes a semiconductor layer () containing an organic substance, and a first electrode (), a second electrode (), and a third electrode () that are not in contact with each other at least electrically. The first electrode () is arranged above the semiconductor layer (), the second electrode () is arranged below the semiconductor layer (), and the third electrode () is arranged beside the semiconductor layer (). The semiconductor layer () is connected electrically to two electrodes selected from the first electrode (), the second electrode (), and the third electrode (), and the electrically insulating layers () are interposed between the electrodes (). The first electrode () lies over the semiconductor layer () so as to extend beyond the periphery of the semiconductor layer (). With this configuration, it becomes possible to provide a field effect transistor that is highly resistant to air and water and thus has a long lifetime even though an organic semiconductor is used therein, and a display device using such a field effect transistor.

Organic field effect transistor and display using same

In order to improve a storage stability at high temperatures of a lithium polymer battery including: a positive electrode comprising a lithium-containing complex oxide; a negative electrode comprising a material capable of absorbing and desorbing a lithium ion; and a separator comprising a liquid organic electrolyte and a host polymer retaining the liquid organic electrolyte, the separator is rendered homogeneous and excellent in the affinity with the organic electrolyte by using a crosslinked copolymer having a main-chain comprising a vinylidene fluoride unit and a side-chain comprising an alkylene oxide unit and at least one of an acrylate unit and methacrylate unit as the host polymer.

Lithium polymer battery and method for producing the same

In a lithium polymer secondary battery comprising: a positive electrode comprising a lithium-containing complex oxide; a negative electrode comprising a material capable of intercalating and deintercalating lithium ions; and a separator interposed between the positive electrode and the negative electrode, the weight Wp of the polymer material constituting the polymer electrolyte contained in the positive electrode, the weight Wn of the polymer material constituting the polymer electrolyte contained in the negative electrode, and the weight Ws of the polymer material constituting the polymer electrolyte contained in the separator satisfy all of the following: Ws<Wn<Wp, 20&lE;100Wp/(Wp&plus;Wn&plus;Ws)&lE;50, 20&lE;100Wn/(Wp&plus;Wn&plus;Ws)&lE;50, and 20&lE;100Ws/(Wp&plus;Wn&plus;Ws)&lE;50; so that a lithium polymer secondary battery which is excellent in cycle stability and high in reliability is provided.

Growing community of inventors

Osaka, Japan

Norishige Nanai