Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Norio Yasuhara

Tomoko Matsudai

Akio Nakagawa

Kazutoshi Nakamura

Yusuke Kawaguchi

Kenichi Matsushita

Yoshihiro Yamaguchi

Hideyuki Funaki

Ichiro Omura

Tsuneo Ogura

Syotaro Ono

Shinichi Hodama

Mitsuhiko Kitagawa

Tomoki Inoue

Ryohei Gejo

Kiminori Watanabe

Shinichiro Misu

Toshiyuki Naka

Kazuya Nakayama

Shigeru Hasegawa

Tsuyoshi Oota

Tomohiro Tamaki

Miwako Suzuki

Manji Obatake

Hiroko Nonaka

Asami Gorohmaru

Naoharu Sugiyama

Yoko Iwakaji

Tatsuya Nishiwaki

Yuichi Goto

Takahiro Kawano

Keiko Kawamura

Masatoshi Arai

Hiroko Itokazu

Bungo Tanaka

Tsuyoshi Ohta

Ryo Wada

Shoko Hanagata

Daiki Yoshikawa

Takashi Tsurugai

Daisuke Minohara

Atsusi Kurobe

Yoshinori Terazaki

Kaori Yoshioka

Kumiko Sato

This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.

Semiconductor device and semiconductor circuit

A semiconductor device includes: cell and termination regions; a first electrode; a semiconductor part on the first electrode; an insulating film on the semiconductor part in the termination region; mutually-separated second electrodes on the insulating film arranged in a direction from a center toward an outer perimeter of the semiconductor part when viewed from above; a first floating electrode in the insulating film overlapping a gap between an adjacent pair of the second electrodes when viewed from above, and facing one of the pair via the insulating film; and a second floating electrode in the insulating film and separated from and overlapping the first floating electrode in the gap when viewed from above, and facing the other of the pair of second electrodes via the insulating film, wherein the overlapping portion of the second floating electrode is positioned below a portion of the first floating electrode overlapping the gap.

Semiconductor device

According to an embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, a gate electrode, and a second electrode. The first semiconductor region is provided on the first electrode. The first semiconductor region includes first portions and first protruding portions. The first portions are arranged along a first direction and a second direction perpendicular to the first direction. The first protruding portions respectively protrude from the first portions. The second semiconductor regions are spaced from each other and provided in the first semiconductor region. The third semiconductor region is provided on the first semiconductor region and the second semiconductor regions.

Semiconductor device and electrical apparatus

A semiconductor device according to an embodiment includes a first diode portion including a first trench extending in a first direction, and a first trench electrode; a second diode portion adjacent to the first diode portion in the first direction and includes a second trench extending in the first direction, and a second trench electrode and of which the width in the first direction is greater than the width of the first diode portion in a second direction perpendicular to the first direction; and a first IGBT portion adjacent to the first diode portion in the second direction and is adjacent to the second diode portion in the first direction and includes a third trench extending in the first direction, and a first gate electrode.

Semiconductor device having IGBT portion and diode portion

According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, an insulating region, and a third semiconductor region of the first conductivity type. The first semiconductor region is provided between the first electrode and the second electrode, and is in contact with the first electrode. The second semiconductor region is provided between the first semiconductor region and the second electrode. The second semiconductor region is in contact with the second electrode. The insulating region extends in a direction from the second electrode toward the first semiconductor region. The insulating region is in contact with the second electrode. The third semiconductor region is provided between the second semiconductor region and the insulating region.

A semiconductor includes a first electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, and a gate electrode. The gate electrode has a first portion arranged with the second semiconductor region in a direction perpendicular to a first direction extending from the first electrode to the first semiconductor region, and has a second portion on the first portion. The semiconductor also includes a gate insulating layer between the gate electrode and each of the three semiconductor regions. The gate insulating layer extends to the upper surface of the third semiconductor region to form an extending portion. The second portion of the gate electrode protrudes in an upward direction from the upper surface of the extending portion of the gate insulating layer, and a lower part of the second portion of the gate electrode is embedded in the first portion of the gate electrode.

Semiconductor device and method of manufacturing semiconductor device

According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region on the first semiconductor region; a third semiconductor region on the second semiconductor region; an fourth insulating film on the second semiconductor region and the third semiconductor region; a first electrode under the first semiconductor region; a second electrode on the fourth insulating film; a plurality of first contact regions extending in a first direction from the first electrode toward the second electrode in the fourth insulating film, and the plurality of first contact regions electrically connecting the third semiconductor region to the second electrode; a plurality of second contact regions extending in the first direction in the fourth insulating film, and one of the plurality of second contact regions between adjacent ones of the first contact regions; and a third electrode in the second semiconductor region via a first insulating film.

According to one embodiment, a semiconductor device includes a drift layer. The device includes a base layer. The device includes a source layer selectively provided on a surface of the base layer. The device includes a gate electrode provided via a gate insulating film in a trench penetrating the source layer and the base layer to reach the drift layer. The device includes a field plate electrode provided under the gate electrode in the trench. The device includes a drain electrode electrically connected to the drift layer. The device includes a source electrode. The field plate electrode is electrically connected to the source electrode. An impurity concentration of a first conductivity type contained in the base layer is lower than an impurity concentration of the first conductivity type contained in the drift layer. And the impurity concentration of the first conductivity type contained in the drift layer is not less than 1&#xd7;10(atoms/cm).

Semiconductor transistor device and method for manufacturing same

A semiconductor device includes a transistor region and diode region. A plurality of transistors is in the transistor region and at least one diode is in the diode region. The transistors include first and second body regions of a first conductivity type. The dopant concentration in the second body region is greater than the dopant concentration in the first body region. The diode includes first and second anode regions of the first conductivity type. The dopant concentration in the second anode region is greater than the dopant concentration in the first anode region. A total dopant amount in the second body region within a first block portion of the semiconductor substrate is greater than a total dopant amount in the second anode layer within a second block portion of the semiconductor substrate of the same size as the first block portion.

According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first conductivity type having a second thickness is provided on the insulating film. An impurity diffusion layer of a second conductivity type is provided partially in a lower portion of the semiconductor layer and is in contact with the insulating film.

Dielectric isolation substrate and semiconductor device

According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.

Semiconductor device and method for manufacturing same

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Kawasaki, Japan

Norio Yasuhara