Dowa Electronics Materials Co., Ltd.

Norio Tasaki

Yoshiyuki Kobayashi

Tetsuya Matsuura

Hiroyuki Togawa

Masatoshi Iwata

Hidetaka Yamada

Provided is a semiconductor optical device with light extraction efficiency or light collecting efficiency higher than that of conventional devices and with a reduced peeling ratio of a wiring electrode portion, and a method of manufacturing the same. In the semiconductor optical, a wiring electrode portionis provided on a surface of a semiconductor layerthat serves as a light emitting surface or a light receiving surface, the line width Wof the wiring electrode portionis 2 &#x3bc;m or more and 5 &#x3bc;m or less, the wiring electrode portionhas a metal layeron the semiconductor layerand a conductive hard filmon the metal layer, and the conductive hard filmis harder than the metal layer

Semiconductor optical device and method of manufacturing the same

A semiconductor light emitting diode of the present invention includes a semiconductor layer including a light emitting portion, and a pad electrode located on the semiconductor layer, the semiconductor light emitting diode further including, between the semiconductor layer and the pad electrode, a reflective portion including a light transmitting insulating layer serving as a current blocking layer located on the semiconductor layer, and a reflective layer located on the light transmitting insulating layer; a contact portion formed from an ohmic electrode in contact with the reflective portion, located on the semiconductor layer; and a conductive hard film between the reflective layer and the pad electrode, the conductive hard film having HV&#xd7;t&#x3e;630, where the Vickers hardness is HV (Hv) and the thickness is t (&#x3bc;m).

Semiconductor light emitting diode having a contact portion and a reflective portion

A light-emitting element comprising a substrate; a light-emitting layer disposed above the substrate and emitting a primary light; and, a reflective film disposed between the substrate and the light-emitting layer and formed by at least one layer that reflects the primary light, in which the light-emitting element further comprises a light dispersing multilayered film disposed between the substrate and the reflective film and formed by two or more types of light dispersing layers, and the light dispersing multilayered film multiple-disperses a secondary light into plural wavelengths and discharges the secondary light, which is excited by the primary light passing through the reflective film.

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Akita, Japan

Norio Tasaki