Toshiba Matsushita Display Technology Co., Ltd.

Norio Tada

Masahiro Yoshida

Hirotaka Hayashi

Hiroki Nakamura

Takayuki Imai

Masahiro Tada

Takashi Nakamura

Arichika Ishida

Masayoshi Fuchi

Masaki Kinoshita

Yuki Matsuura

Jun Hirota

In making a contact determination between an object and a display screen, a display apparatus of the present invention is capable of adjusting a region on which to make a contact determination in response to the displayed image in a liquid crystal panel, so that the influence by the displayed image can be suppressed. Moreover, for simplifying the contact determination process, the display apparatus sets solid a region in the picked-up image that is not a target of the contact determination, with a predetermined gradation value.

Display apparatus with optical input function

In order to improve accuracy in determining whether or not an object touches a display screen, a display device includes a display unit and a processor. The display unit includes an image display unit which displays an image on a display screen, an optical input unit which picks up an image of an object adjacent to the display screen and a capacitive coupling detector which detects a capacitive coupling to the object adjacent to the display screen. The processor determines that the object touches the display screen by using, and concurrently calculates the coordinates touched by the object by using the capacitive coupling detected by the capacitive coupling detector, and the image picked up by the optical input unit.

Display device

A liquid crystal panel brightness controller notifies a backlight controller that an illuminance of ambient light is equal to or less than a threshold value. Upon notification, the backlight controller causes invisible light emitted, for example. The invisible light passes through a liquid crystal panel and is reflected by an imaging target and is received by photosensors. Accordingly, the decrease in the amount of the visible light received by photosensors is compensated. As a result, an image with a high S/N ratio is obtained.

Liquid crystal display device achieving imaging with high S/N ratio using invisible light

A display device has a predetermined display region and includes an array substrate equipped with a drive circuit, and a light sensor for measuring outside illuminance and a temperature sensor both installed on the array substrate. A control method for the display device includes using the light sensor to measure outside illuminance and using an output of the temperature sensor to correct an output of the light sensor, thereby adjusting luminance in the display region. The display device may further include an opposed substrate in opposition to the array substrate, a liquid crystal layer sandwiched between the two substrates to form the predetermined display region, and a backlight, thereby constituting a liquid crystal display device. Another configuration of a display device has a predetermined display region and includes an array substrate equipped with a drive circuit for display, and a light sensor installed on the array substrate for measuring outside illuminance, a filtering circuit for filtering a signal output from the light sensor and a processing circuit for processing the signal output from the light sensor and then filtered with the filtering means.

Display device and control method therefor

To enable acquisition of image data in multiple tone levels in a short capturing time, a liquid crystal display deviceincludes a photodiode having sensitivity R, a capacitor having capacitance C and configured to store a charge in response to an electric signal converted by the photodiode in a state where an initial voltage V is applied thereto, a SRAM configured to retain binary data which indicate as to whether or not an amount of charge stored in the capacitor is equal to or above a threshold voltage Vth, an image capturing control unitconfigured to generate pixel data in multiple tone levels based on the binary data outputted from the SRAM of a plurality of adjacent pixels. Here, at least any one value of R, V, C, and Vth in each of the pixels is set to a different value from relevant values of other adjacent pixels.

Liquid crystal display device provided with an image capturing function

A photoelectric conversion element includes a semiconductor layer including a pair of pregions in which p-type impurities are doped, and a pregion which is disposed between the pregions and has a lower p-type impurity concentration than the pregions. A gate electrode is formed over the pregion via a gate insulation film, thus, a p-MOS structure is formed. A width of the gate electrode is less than a width of the pregion. A pregion, which is a portion of the pregion and is located immediately below the gate electrode, forms a light receiving layer, and pregions, which are portions of the pregion and are located away from below the gate electrode, form LDD regions. The photoelectric conversion element is fabricated on the same substrate as a thin-film transistor for a driving circuit, thereby constructing a display device with an input function.

Photoelectric conversion element and display device including the same

In a manufacturing process of a display device, hydrogenation in an I layer of photodiodes Dand Dis progressed less than that in a channel portion of a pixel TFT, and a defect density due to dangling bonds not terminated in the I layer of the photodiodes Dand Dis made higher than a defect density in the channel portion of the pixel TFT. Thus, while suppressing a leakage current of the pixel TFT, the sensitivity of the photodiodes Dand Dto light is improved. Moreover, a gate electrode is provided above an i region of a pin-type optical sensor diode with an insulating film interposed therebetween. Thus, a gate voltage can control a threshold of a bias voltage when a current starts to flow into the optical sensor diode and a leakage current is prevented from flowing into the optical sensor diode.

Suppression of leakage current in image acquisition

A display device has display elements provided inside of pixels, each being formed in vicinity of intersections of signal lines and scanning lines aligned in matrix form; and photoelectric conversion elements, wherein each of the photoelectric conversion elements includes first, second and third semiconductor regions disposed adjacently in sequence in parallel to a surface of a substrate; a first electrode connected to the first semiconductor region; and a second electrode connected to the third semiconductor region, the first semiconductor region being formed by injecting a first conductive impurity in first dose amount; the third semiconductor region being formed by injecting a second conductive impurity in second dose amount; and the second semiconductor region being formed by injecting the first conductive impurity in third dose amount less than the first dose amount.

Display device and photoelectric conversion device

A circuit array substrate is provided with thin-film transistorsandand PIN diodeformed on insulation substrate. Active layerand photo-electric sensor portionare made of poly-silicon films. Impurities are doped into active layerand photo-electric sensor portionin the same process chamber, if necessary, to make their impurity concentrations different from each other. Thin-film transistorsandwith prescribed characteristics and PIN diodewith improved photosensitivity can be simultaneously, easily manufactured on insulation substratewith a lesser number of processes.

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Kumagaya, Japan

Norio Tada