Sanyo Electric Co., Ltd.

Norio Tabuchi

Yasuo Segawa

Kiyoshi Yoneda

Tsutomu Yamada

Hiroki Hamada

Keiichi Sano

Susumu Oima

Hiroaki Kouno

Shouzou Ohura

Yasuaki Inoue

Susumo Oima

Kimihide Minakuchi

A circuit having a CMOS configuration in which n-type and p-type thin film transistors are connected in a complementary manner to one another is employed as a drive circuit of a display or the like. The n-type and p-type thin film transistors have common gate electrodes and drain electrodes, with respective source electrodes being connected to difference power sources, thereby providing a complementary connection structure. A source electrode of that one of the n-type thin film transistor and the p-type thin film transistor that is subjected for a longer period of time to an off voltage, applied to the shared gate electrode, for turning that transistor off, is extended in such a manner as to overlap a channel formation region of the corresponding thin film transistor. This present a variation in characteristic of the thin film transistor.

Thin film transistor having a covered channel and display unit using the same

A gate electrode (,), a gate insulating film (,), and an active layer (,) made of a poly silicon film and having a source (,), a channel (,), and a drain (,) are formed on an insulating substrate (,) and an interlayer insulating film (,) is formed over the whole of the gate insulating film (,), the active layer (,), and a stopper insulating film (,). A drain electrode (,) is formed by filling a contact hole made in the interlayer insulating film (,), the position of which corresponds to the drain (,), with a metal, such as Al. Simultaneously with the drain electrode (,), a conductive layer (,) is formed on the interlayer insulating film (,) over the channel (,). The conductive layer (,) is connected to gate signal line G on the insulating substrate (,) via a contact hole (,) made in the gate insulating film (,) and the interlayer insulating film (,). The width of the conductive layer (,) along the length of the channel (,) is narrower than the actual length of the channel (,) and narrower than the width along the channel length of the gate electrode (,). The conductive layer (,) can therefore shield the channel (,). As a result, even if impurities or the like become attached to the surface of the interlayer insulating film (,), the occurrence of a back channel, for example, is reliably prevented.

Thin film transistor and display

A liquid crystal display includes a display region which is provided with a display pixel driving element, a drain driver which is arranged at least on a part around the display region for supplying a video signal to the display pixel driving element of the display region, a gate driver which is arranged at least on a part around the display region for supplying a scanning signal to the display pixel driving element of the display region, a drain line which is provided to connect the display region with the drain driver, and an additional capacitive electrode which is provided on a region between the display region and the drain driver.

Display and method of fabricating the same

An active matrix liquid crystal display improves its contrast by suppressing irregularity of an alignment film caused by video lines thereby reducing reverse regions on a display electrode. The active matrix liquid crystal display has first and second opposite substrates, a video line, an active element and a display electrode which are directly or indirectly formed on the first substrate, and an alignment film which is formed on or above the video line, the active element and the display electrode. The alignment film is so formed that is surface is at an angle of inclination of not more than 10.5.degree. with respect to the display electrode surface between the video line and the display electrode.

Active matrix liquid crystal display having alignment film with inclined

An active matrix liquid crystal display improves its contrast by suppressing irregularity of an alignment film caused by video lines thereby reducing reverse regions on a display electrode. The active matrix liquid crystal display has first and second opposite substrates, a video line, an active element and a display electrode which are directly or indirectly formed on the first substrate, and an alignment film which is formed on or above the video line, the active element and the display electrode. The alignment film is so formed that its surface is at an angle of inclination of not more than 10.5.degree. with respect to the display electrode surface between the video line and the display electrode.

Active matrix liquid crystal display having insulating layer larger than

A semiconductor laser device comprises: a semiconductor laser including laser resonators for emitting laser beams forward and backward oppositely along a plurality of parallel axes; a photodetector including a plurality of photodetector elements for detecting intensities of the laser beams emitted backward; and a waveguide located between the semiconductor laser and the photodetector for guiding the backward emitted laser beams to the corresponding ones of the photodetector elements, the waveguide including a plurality of guide grooves for guiding the backward emitted laser beams.

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Ichinomiya, Japan

Norio Tabuchi