National Institute for Materials Science

National Research Institute for Metals

Japan As Represented by Director General of National Research Institute of Metals

Norio Shinya

Jie Tang

Luchang Qin

Qian Cheng

Hiroshi Fudoji

Jinshi Yuan

Mikihiko Kobayashi

Takehiko Kikuchi

Setsuo Kajiwara

Kazuyuki Ogawa

Takeshi Konno

Yasushi Yamauchi

Han Zhang

Kun Zhang

Mitsuru Egashira

Jing Li

Feifei Zhang

Alberto Baruj

Daozhi Liu

Provided are a novel method for manufacturing a stack of carbon nanotube and graphene that can improve a capacitor characteristic, an electrode material including the stack of carbon nanotube and graphene, and an electric double-layer capacitor using the same. A method for manufacturing a stack of graphene and carbon nanotube includes a step of dispersing the graphene in an aqueous MOH solution (M represents an element selected from a group consisting of Li, Na, and K) to adsorb MOH on the graphene, a step of heating the graphene with MOH adsorbed thereon that is obtained in the adsorption step in vacuum or in an inert atmosphere in a temperature range of 400&#xb0; C. or more and 900&#xb0; C. or less to form pores in the graphene, and a step of dispersing the carbon nanotube and the graphene with the pores that are obtained in the step of forming the pores in a dispersion medium to stack the carbon nanotube and the graphene with the pores.

Method for manufacturing stack of graphene and carbon nanotube, electrode material including stack of graphene and carbon nanotube, and electric double-layer capacitor using the same

The problem addressed by the present invention is to provide an apparatus for preparing ultrathin graphene pieces capable of preparing ultrathin graphene pieces in which less than 10 pieces of graphene are overlapped in large quantities, a method for preparing ultrathin graphene pieces capable of preparing the ultrathin graphene pieces with high yield, an ultrathin graphene piece in which less than 10 pieces of graphene are overlapped, a capacitor having high performance by using the ultrathin graphene piece as an electrode, and an efficient method of manufacturing the capacitor. The above-described problem can be solved by using an apparatusfor preparing ultrathin graphene pieces, the apparatus comprising: a graphite electrode; a counter electrodewhich is made of graphite, a corrosion resistant alloy, or a precious metal; an electrolytic solutionin which one end sides of the two electrodesandare immersed; a containerwhich stores the electrolytic solution; and a power sourcewhich is connected to the two electrodesandvia wiringsand. The apparatus is also provided with a porous filterso as to cover at least the immersed part of the graphite electrodethat is immersed in the electrolytic solution

Ultrathin graphene piece, apparatus for preparing ultrathin graphene pieces, method for preparing ultrathin graphene pieces, capacitor, and method of manufacturing capacitor

The object of the present invention is to provide linked stacks of reduced graphene, in which excellent electrical property on the surface of graphene may be utilized, a method for producing the same, powder comprising the same, and film comprising the same. The object may be solved by using linked stacks of partly reduced graphenecomprising two or more stacks of partly reduced graphenetolinked together, in which the stack of partly reduced graphenehas two or more sheets of partly reduced grapheneand a nanosubstanceheld between the sheets of partly reduced graphene, the partly reduced graphenehas no carbonyl groups and has carboxyl groupsand hydroxyl groups, and different stacks of partly reduced graphenetoare linked to each other by an ester bond

Linked stacks of partly reduced graphen, method for producing linked stacks of partly reduced graphene, power comprising linked stacks of partly reduced graphene, graphene electrode film, method for producing graphene elcetrode film, and graphene capacitor

A metal hexaboride nanowire such as LaBwith the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very short time period, and the output current greatly decreases when used under low temperature. The cold field emitter of the present invention overcomes this problem with a stabilization process that exposes the metal-terminated (100) plane of the tip to hydrogen at low temperature, and can stably operate over extended time periods.

Metal hexaboride cold field emitter, method of fabricating same, and electron gun

A process for arranging a number of micro-bodies efficiently and precisely as one on one spot on a substrate. Charged spots are formed by a converging ion beam or the like on a substrate having an insulating property or the like, and micro-bodies having a size of 200 microns or less are attracted and stuck to the charged spots.

Process for precise arrangement of micro-bodies

A NbC-added Fe&#x2014;Mn&#x2014;Si-based shape memory alloy is provided, showing a shape memory property even if a special treatment such as training is not performed. A Fe&#x2014;Mn&#x2014;Si-based shape memory alloy containing Nb and C is rolled by 10 to 30% in a temperature range of 500 to 800&#xb0; C. under austenite condition, then, subjected to an aging treatment by heating in a temperature range of 400 to 1000&#xb0; C. for 1 minute to 2 hours.

Method of processing and heat-treating NbC-added Fe-Mn-Si-based shape memory alloy

A novel patterned thin film forming method is capable of realizing formation of nanometer-scale patterned thin films with high controllability by an easy and low-cost process. To form a patterned thin film on an insulating substrate in a precursor solution containing a film-forming substance, an electric charge pattern is formed on the insulating substrate, and then the insulating substrate is dipped in the precursor solution to deposit the film-forming substance on the electric charge pattern formed on the insulating substrate.

Method of forming patterned thin film

A novel shape memory alloy of Fe&mdash;Mn&mdash;Si system containing at least Fe, Mn, and Si wherein the alloy contains niobium carbide in the structure and is improved in that a sufficiently satisfactory shape memory effect is provided without carrying out a special treatment termed training.

Growing community of inventors

Ibaraki, Japan

Norio Shinya