Hitachi, Ltd.

Other

Canon Kabushiki Kaisha

Nippon Telegraph and Telephone Public Corporation

Nippon Telegraph and Telephone Corporation

Hitachi-high-technologies Corporation

Norio Saitou

Yasunari Sohda

Haruo Yoda

Yoshinori Nakayama

Hiroya Ohta

Masahide Okumura

Susumu Ozasa

Yasuhiro Someda

Mitsuo Ooyama

Hideo Todokoro

Yoshihiko Okamoto

Shinji Okazaki

Takashi Matsuzaka

Masato Muraki

Katsuhiro Kuroda

Hiroyuki Itoh

Fumio Murai

Kimiaki Ando

Hidetoshi Satoh

Tsutomu Komoda

Genya Matsuoka

Yukinobu Shibata

Akira Hirakawa

Tsuneo Okubo

Ikuo Takada

Hiroyuki Shinada

Kaoru Umemura

Takashi Yamazaki

Takashi Inoue

Hitoshi Yokono

Tsuneo Terasawa

Hiroshi Tsuji

Yoshio Kawamura

Hifumi Tamura

Satoru Fukuhara

Mitsuru Inoue

Eiji Takeda

Yoshikiyo Yui

Hidetaka Shigi

Hideo Arima

Soichi Katagiri

Minoru Hidaka

Yoshimasa Fukushima

Nobuo Shimazu

Hiroyuki Kohida

Eiichi Seya

Tadahito Matsuda

Minpei Fujinami

Katsuhiro Harada

Katsuhiro Kawasaki

Masaki Takakuwa

Kazumi Iwadate

Teruo Iwasaki

Akira Yanagisawa

Massaaki Ito

Takanori Simura

Shin'ichi Hashimoto

A charged particle beam exposure apparatus which exposes a substrate using a plurality of charged particle beams includes a first measurement member for making the plurality of charged particle beams come incident and measuring a total current value of the charged particle beams. A second measurement member makes the plurality of charged particle beams come incident and multiplies electrons of each of the incident charged particle beams, thereby measuring a relative value of a current of each of the charged particle beams.

Charged particle beam exposure method and apparatus and device manufacturing method using the apparatus

Electron beam monitoring sensor and electron beam monitoring method

An electron beam lithography apparatus of the present invention prevents the electron beam trajectory from being affected by a leakage magnetic field from a permanent magnet which is used as a sample stage guide/driving mechanism. In this electron beam lithography apparatus, an air bearing guide is used as a sample stage guide mechanism, and the stage posture is held by attracting the stage floating on a surface plate to the surface plate side by the permanent magnet. To avoid the leakage magnetic field from the permanent magnet from affecting the electron beam irradiation position on the sample, the permanent magnet is magnetically shielded by a shield member. In addition, to reduce variations in magnetic field above the sample, which are generated when the shield member moves in a leakage magnetic field from the electron lens, another shield member is arranged under the electron lens.

Electron beam lithography apparatus

The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.

Electron beam exposure method, electron beam exposure apparatus and device manufacturing method using the same

An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.

Electron beam lithography apparatus and pattern forming method

Method of fabricating semiconductor circuit devices utilizing multiple

An electron beam writing apparatus comprises: an electron beam source for projecting an electron beam; a first mask provided with a first rectangular aperture for passing the electron beam projected by the electron beam source to shape the electron beam in a primary shaped beam having a rectangular cross section; a second mask provided with a second rectangular aperture for passing the primary shaped beam to shape the primary shaped beam in a secondary shaped beam having a rectangular cross section, and triangular apertures for passing the primary shaped beam to form a secondary shaped beam having a triangular cross section; a first electron beam deflecting system for moving the primary shaped beam on the surface of the second mask; and a second electron beam deflecting system for moving the secondary shaped beam on the surface of a workpiece on which a pattern is to be written. Each of the triangular apertures is formed in a size such that the triangular aperture can be entirely covered with a rectangular image formed by the first shaped beam on the surface of the second mask.

Electron beam writing method and apparatus for carrying out the same

Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

Exposure method and pattern data preparation system therefor, pattern

A blanking array is used for controlling an electron beam in an electron beam writing system. Electrodes in the array are formed in parallel and two sets of the parallel electrodes, orthogonal to one another, are used for dividing the electron beam into a plurality of individual exposure areas. The sets of parallel electrodes can be formed in one array by a wire mesh or in two separate arrays spaced closely together or farther apart at different focal point positions. The electrodes are provided to extend across an aperture, such as a square or triangular aperture. For a triangular aperture, the electrodes are made parallel to the hypotenuse of the triangle. The writing patterns are formed by combining the exposure areas. Control of each exposure area is realized by applying opposite polarity voltage to adjacent electrodes in order to deflect the portion of the beam passing between the adjacent electrodes. The deflected beam portions are blocked by a downstream aperture that permits the non-deflected electron beam portions to pass through for forming the patterns to be written.

Electron beam writing system

A technique and exposure apparatus measures, with a high degree of accuracy, figure and placement errors of individual optical elements constituting optics embedded inside of an exposure apparatus or the like, with the optics kept in an embedded state as they are. The system measures the distribution of wavefront distortions in the optics while changing the positions of a light source and an image point inside an exposure field of the optics being observed. Optimal displacements of reflective surfaces constituting the optics are then found by calculation based on the measured distribution of wave-front distortions. Finally, the positions of the reflective surfaces are corrected in accordance with the calculated optimal displacements. The positions of the reflective surfaces are corrected by individually controlling displacements output by a plurality of actuators attached to each reflective surface and by mechanically modifying appropriate portions of the reflective surfaces.

Methods for measuring optical system, and method and apparatus for

The present invention relates to a system for drawing patterns on a wafer by using a charged particle beam such as an electron beam, in which a complicated prealigning mechanism used for mounting the wafer on a stage is omitted. Instead, according to the present system, rotation of the wafer is detected and a shaped beam is rotated by an amount corresponding to the value detected. Subsequently, a predetermined pattern is drawn on the substrate. The system includes a detecting device for detecting the rotation of the wafer by using an orientation flat or adjusting marks; a computer for storing a value corresponding to the rotation thus detected; a rotating lens control circuit for receiving data from the computer; and a rotating lens.

Charged particle beam lithography system and method therefor

An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.

Electron beam writing system used in a cell projection method

A thick and thin film hybrid multilayer wiring substrate includes an adjustment layer provided between a thick film circuit and a thin film circuit in order to adjust positions of the thick film circuit and the thin film circuit with high integration and large area of the thick and thin film hybrid substrate. The adjustment layer is formed using a direct printing process in accordance with dispersion of the shape of the thick film circuit substrate to absorb the dispersion of the substrate. Further, in order to absorb dispersion of contraction of the thick film substrate due to sintering, a position of a mark provided on the substrate is detected by an electron beam and thereafter a connection pattern is formed to be connected to a regular pattern.

Method and apparatus of fabricating electric circuit pattern on thick

An electron beam lithography system having a contour resolving circuit for resolving original pattern data which is transferred from a host computer into contour portion pattern data and inner portion pattern data in accordance with the designated dimension, for adding flag data to enable the contour portion pattern data and the inner portion pattern data to be discriminated to the resolved pattern data, and for outputting the resolved pattern data with the flag data. By adding the flag data, the contour portion pattern data and inner portion pattern data can be easily discriminated. The operation to change the electron beam irradiation dose in accordance with the contour portion pattern and inner portion pattern can be fairly easily executed. A pattern can be drawn at a high accuracy while preventing a deformation of the drawn figure due to the proximity effect. A data processing amount in the computer can be reduced. A data transfer amount from the host computer can be also reduced. Thus, an electron beam lithography system having a high throughput can be realized.

Electron beam lithography system

Growing community of inventors

Tokorozawa, Japan

Norio Saitou