Hitachi Cable, Inc.

Other

Renesas Technology Corp.

Hitachi, Ltd.

Norio Okabe

Mamoru Mita

Yasuharu Kameyama

Akira Nagai

Masahiko Ogino

Ichiro Anjoh

Shuji Eguchi

Chuichi Miyazaki

Hiroyoshi Kokaku

Masanori Segawa

Kunihiro Tsubosaki

Makoto Kitano

Nobutake Tsuyuno

Makoto Morishima

Rie Hattori

Toshiak Ishii

Asao Nishimura

Gen Murakami

Toshiaki Ishii

Takumi Ueno

Toyohiko Kumakura

Gen Murakamz

Katsuji Komatsu

Shoji Shinzawa

Hiroki Tanaka

Masahiko Saito

Hiroshi Ishikawa

Takumi Sato

Masayuki Hosono

Katsutoshi Taga

Takayuki Sato

A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for the mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200&#x2013;250&#xb0; C.).

Circuit tape having adhesive film semiconductor device and a method for manufacturing the same

In a semiconductor device having a three-layered buffer layer comprising core layerhaving interconnected foams such as a three-dimensional reticular structure and adhesive layersprovided on both sides of the core layer as a stress buffer layer between semiconductor chipand wiringto lessen a thermal stress generated between the semiconductor device and the package substrate, where a thickness ratio of the core layerto total buffer layer is at least 0.2, the production process can be simplified by using such a buffer layer, thereby improving the mass production capacity and enhancing the package reliability.

Wiring tape for semiconductor device including a buffer layer having interconnected foams

A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200-250&deg; C.).

Circuit tape having adhesive film, semiconductor device, and a method for manufacturing the same

Semiconductor device, tab tape for semiconductor device, method of manufacturing the tab tape and method of manufacturing the semiconductor device

In a semiconductor device having a three-layered buffer layer comprising core layer having interconnected foams such as a three-dimensional reticular structure and adhesive layers provided on both sides of the core layer as a stress buffer layer between semiconductor chip and wiring to lessen a thermal stress generated between the semiconductor device and the package substrate, where a thickness ratio of core layer to total buffer layer is at least 0.2, the production process can be simplified by using such a buffer layer, thereby improving the mass production capacity and enhancing the package reliability.

Semiconductor device having a porous buffer layer for semiconductor device

A semiconductor chip is mounted on a tape carrier by interposing an elastmer layer therebetween, so that thermal stress caused by a difference of thermal expansion coefficients of the semiconductor chip and the tape carrier is relieved. The tape carrier is structured by an insulating film and a plurality of leads formed on the insulating film. The insulating film has an opening for bonding the plurality of leads to the electrodes of the semiconductor chip, and the elastmer layer comprises first and second elastmer layers provided on the opposite sides of the opening to be separated around at least one end of the opening. The opening may be divided into a plurality of openings, in each of which a corresponding one or some of connected portions of the plurality of leads and the electrodes of the semiconductor chip are positioned, and sealing resins are filled in the plurality of openings to seal the connected portions.

Tape carrier for BGA and semiconductor device using the same

&ldquo;&rdquo;-shaped slits and linking portions are previously provided so as to surround a semiconductor chip-mounting region in a TAB tape. A semiconductor chip is applied onto the semiconductor chip-mounting region. The semiconductor chip in its electrode pad is connected by bonding to the TAB tape in its inner lead. The bonded connection is subjected to plastic molding. Solder balls are provided on the backside of the TAB tape in its portion corresponding to the semiconductor chip-mounting portion. Thereafter, the package portion is cut off at the cutting position in the linking portion of the slits. By virtue of the above constitution, highly reliable BGA type semiconductor devices can be produced while reducing the thickness and reducing the size.

Process for producing BGA type semiconductor device, TAB tape for BGA type semiconductor device, and BGA type semiconductor device

A structure of a semiconductor device of a CSP structure is provided. In the semiconductor device, the limitation by the bonding tool is small and the bonding pitch of the semiconductor chip can be reduced to 100 &mgr;m or less, and the chip shrink technique of a technique for lowering the cost can be employed and in connection with this, compatibility among packages can be kept. The semiconductor device comprising a semiconductor chip; a TAB tape being used in a manner being directly laminated onto a circuit formed surface of the semiconductor chip or being laminated through a stress moderating elastomer onto the circuit formed surface of the semiconductor chip, the TAB tape having leads made of a metallic film formed on an insulator tape having flexibility; and an externally connecting member formed in an end of the lead of the TAB tape, wherein the TAB tape has holes in the insulator tape, each of the holes corresponding to a bonding pad formed on a circuit formed surface of the semiconductor chip at a position corresponding to a position of the bonding pad; the lead being formed so as to be bridged across over the hole; the lead formed above the hole being joined to the bonding pad of the semiconductor chip.

A tape carrier is constituted comprising land,for solder ball, formed in a predetermined pattern on insulating film,having device hole,formed in the middle, leads,to be connected to a semiconductor chip, plating power-feeding lead,having one end connected to lead,and formed on insulating film,, and easily-broken part,provided in the middle of the power-feeding leads. A semiconductor device is constituted wherein tape carrier,is provided with plating power-feeding lead,formed on insulating film,, one end of which is drawn out of insulating film,, the other end being connected to leads,, and plating power-feeding lead,is disconnected from the leads when semiconductor chip,is installed. Thus, a tape carrier for BGA which is manufactured easily, capable of achieving higher density of wiring in the wiring pattern, improved in water-resistance and reliability, and a semiconductor device using the same are provided.

A semiconductor device having a superior connection reliability is obtained by providing a buffer body for absorbing the difference of thermal expansion between the mounting substrate and the semiconductor element in a semiconductor package structure, even if an organic material is used for the mounting substrate. A film material is used as the body for buffering the thermal stress generated by the difference in thermal expansion between the mounting substrate and the semiconductor element. The film material has modulus of elasticity of at least 1 MPa in the reflow temperature range (200-250.degree. C.).

Circuit tape having adhesive film, semiconductor device, and a method

A substrate 1 of a insulating resin material is provided with a semiconductor chip 2 in the center of the substrate 1 and a lot of fine studs are filled in the substrate 1 around the chip 2. A bonding pad 13 and a land 14 are formed on both end planes of each stud 12 by silver plating. The length of the stud 12 is determined so that the plane of the land 14 and the back side plane of the substrate are approximately co-planar, but it may be longer. The substrate 1 including the studs 12 having the bonding pad 12 and the land 14 is defined as an interposer 15.

Semiconductor device, interposer for semiconductor device

Interposer for semiconductor device

A method of manufacturing a double-sided circuit tape carrier comprising an insulating film like a polyimide tape, circuit wiring patterns on both sides thereof, and via holes through which at least a part of the circuit wiring patterns on both sides are electrically connected with each other. A copper thin film is patterned by photoetching. Via holes are formed through the insulating film by irradiating a laser beam by using the patterned copper thin film as a mask. Then, a conductive layer of a graphite conductive thin film and a copper plating layer is formed. The copper thin film is patterned by photoetching forming a chip hole and an outer lead hole through the insulating film by irradiating a laser beam. Finally, one of the copper thin films is patterned by photoetching to form circuit wiring pattern.

Method of manufacturing double-sided circuit tape carrier

Growing community of inventors

Hitachi, Japan

Norio Okabe