Hitachi, Ltd.

Showa Denko Kabushiki Kaisha

Hitachi Denshi Kabushiki Kaisha

Hitachi Device Engineering Co., Ltd.

Norio Koike

Masaharu Kubo

Iwao Takemoto

Shinya Ohba

Toshihisa Tsukada

Toru Baji

Haruhisa Ando

Masaaki Nakai

Toshiyuki Akiyama

Hideaki Yamamoto

Akira Sasano

Toshifumi Ozaki

Hideyuki Ono

Shusaku Nagahara

Hajime Akimoto

Masakazu Aoki

Toshio Nakano

Toshiaki Masuhara

Yukio Takasaki

Eiichi Maruyama

Haruo Matsumaru

Ken Tsutsui

Masaaki Fukuhara

Yasushi Matsui

Shuhei Tanaka

Yoshiyuki Kaneko

Yasuo Tanaka

Kazuhiro Sato

Tatsuhiko Monji

Tadaaki Hirai

Shigeru Shimada

Yoshinori Imamura

Masatada Horiuchi

Michiaki Hashimoto

Shoji Hanamura

Ken Ohsumi

Yoshio Taniguchi

Chushirou Kusano

Akiya Izumi

Saburo Ataka

Tadao Kaneko

Ryuichi Izawa

Mikio Ashikawa

Kunio Takahashi

Kenji Itoh

Shuusaku Nagahara

Takahiko Goto

Takamitsu Kamiyama

Hiroshi Matsue

Takeshi Ogino

Kenichi Okazaki

Syoji Hanamura

Kenji Ito

Shinya Oba

Toshinori Kamisaka

Harushisa Ando

Hajime Kinugasa

Although a conventional method can eliminate a mounting position deviation when left and right camera units only are taken into consideration, a problem is posed that deviation again occurs due to poor machining precision and assembly precision at the mounting surface between a camera unit and a member when a camera unit is mounted to a stay. According to this invention, mounting surfaces for mounting left and right imaging elements to a stay are provided to directly position left and right imaging elements to the stay, whereby built-up tolerance between components is reduced and the positional mounting precision between imaging elements is improved.

Stereo camera

In a camera unit having a lens and an imaging device, the imaging device is fixed by means of a base plate, an elastic material, and a printed circuit board. The imaging device abuts on a first plane of the base plate, and the elastic material is sandwiched between the printed circuit board and a second plane opposite to the first plane of the base plate.

Camera unit

A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.

Thin film phototransistor and photosensor array using the same

A solid-state imaging device includes a vertical CCD shift register for transferring electric charge. The electrode of the vertical CCD located nearest to the substrate is extended outside of the region of the vertical CCD to a region of a layer where isolation is required. The layer is thus imparted with two functions, that is, the function of the CCD electrode and that of the iolation electrode. An overflow transistor is also provided to discharge excess charge produced by high intensity light.

Solid-state imaging device

Vertical CCD registers constituting parts of an interline type CCD imaging device hold independently the signal charges transferred from photoelectric conversion elements and having different storage durations. Transfer of charge to the vertical CCD registers from the photoelectric conversion element is performed at least twice during one field period. The vertical CCD registers transfer the signal charges of different storage durations independent of one another.

A solid-state imaging device having a plurality of semiconductor layers of a first conductivity type for photo-electric conversion provided on the surface of a first semiconductor layer of a second conductivity type which is formed on a part of one surface of a semiconductor substrate of the first conductivity type, a semiconductor layer of the first conductivity type for charge transfer provided on the surface of a second semiconductor layer of the second conductivity type which is formed on a part of the surface of the substrate, and a signal output means. The first semiconductor layer of the second conductivity type and the second semiconductor layer of the second conductivity type are formed in different steps so that the first semiconductor layer is disposed deeper than the second semiconductor layer.

In the interline type charge transfer imaging device, two of the three groups of wiring through which driving pulses are sent to each of three groups of electrodes constituting vertical charge transfer devices are arranged in horizontal direction and the remaining one group of wiring is arranged in vertical direction. Light-shielding layer is installed on the vertically running wires and the electrodes connected with those wires.

Interline type charge transfer imaging device

Lepidocrocite suitable for obtaining excellent magnetic powders and magnetic recording media is manufactured by oxidizing an aqueous suspension of ferrous hydroxide obtained from a ferrous salt and an alkali by blowing an amount of an oxygen-containing gas into the suspension, in which the blowing amount of the oxygen-containing gas is appropriately controlled in three steps, according to three steps of the oxidation reaction of the ferrous hydroxide. In a preferred embodiment, average oxygen absorption rates in the three oxidization steps are defined and the blowing of the oxygen-containing gas is controlled thereby.

Method for manufacturing lepidocrocite

Lepidocrocite (.gamma.-FeOOH) with an large specific surface area and a uniform particle size is provided by a method comprising preparing a suspension of ferrous hydroxide at a pH of 6.5 to 7.5 by adding a ferrous salt solution with an alkali solution in an amount of 0.4 to 0.7 times the theoretical amount for converting all the ferrous salt to ferrous hydroxide, blowing an oxygen-containing gas into the suspension to form a seed crystal of .gamma.-FeOOH, completing the generation reaction of .gamma.-FeOOH by blowing an oxygen-containing gas into the suspension while adding an alkali solution to keep the pH of the suspension within a range of 3 to 5, in which an Si concentration of the suspensions for seed reaction and for generation reaction of .gamma.-FeOOH is controlled to be within 5 to 30 ppm.

A charge transfer type solid-state device incorporating a charge coupled device (CCD). In order to eliminate field after image and smear, at least two electrode pairs are provided in a vertical CCD shift register for transferring the signal charges stored in photoelectric conversion elements, the electrode pairs being disposed within the vertical pitch of the photoelectric conversion elements. P

Charge transfer type solid-state imaging device

A solid stage imaging device, in which photodiodes each capable of converting incident light into a electric charge and accumulating the electric charge are arranged regularly in a matrix, e.g. in horizontal and vertical directions, and electric charges of the photodiodes are sent to the outside by means of CCD's, includes a scanning circuit which scans switching MOS transistors for transferring the electric charges of the photodiodes to vertical CCD's, in a vertical direction so that switching MOS transistors in a row parallel to a horizontal direction can be driven independently of switching MOS transistors in another row. When the solid state imaging device is driven, an operation for transferring an electric charge in each vertical CCD and an operation for driving switching MOS transistors in the next row with the aid of the scanning circuit are alternately performed, to reduce the amount of smear and to increase the dynamic range of each vertical CCD, without increasing the number of CCD's used.

Solid state imaging device and method with row-by-row charge transfer

A solid-state imager includes vertical CCD shift registers for transferring photogenerated signal charge packets produced by a group of photodiodes belonging to a first series, vertical CCD shift registers for transferring photogenerated signal charge packets produced by photodiodes belonging to a second series, a horizontal CCD shift register for receiving signal charge packets shifted through both the vertical shift registers and transferring them to an output circuit and a coupling circuit provided between the horizontal CCD shift register and both the vertical CCD shift registers, all the components being formed on a single semiconductor substrate. Through the coupling circuit, one of two series of photogenerated signal packets transferred from both the vertical CCD shift registers located adjacent to each other are transferred to the horizontal CCD shift register beneath a set of storage electrodes thereof, which is followed by the transfer of the other series of signal charge packets to the horizontal shift register beneath other set of storage electrode. The horizontal CCD shift register transfers sequentially and alternately two series of the photogenerated signal charge packets to an output circuit. Two series of the signal charge packets can thus be transferred through the single horizontal CCD shift register.

CCD Type solid-state imaging device

A solid-state imaging device is provided which employs CCDs as vertical shift registers and a horizontal shift register for vertically and horizontally scanning and reading out a large number of photoelectric elements arrayed in a two-dimensional plane. The imaging device is characterized in that the photoelectric elements of each column arranged between the vertical shift registers are alternately connected to the right and left vertical shift registers. This results in the resolution of the device being enhanced sharply.

The present invention consists in providing a CCD type color solid-state imager in which color signals respectively separated in time can be derived from picture elements for respective colors arrayed in the shape of a matrix and which permits interlacing without degrading a resolution and without causing image lag. Concretely, pairs of CCD shift registers which are electrically insulated and separated and which run in the vertical direction are arrayed in the horizontal direction, signal charges stored in adjacent picture elements are sent into the individual opposing CCD registers through transfer gates arrayed in a checkerboard pattern, and signal charges transferred in time sequence are distributed to a plurality of CCD shift registers which run in the horizontal direction, whereby a CCD type color solid-state imager having a high resolution and exhibiting no image lag is obtained.

Color solid-state imager

A color solid-state imager comprising a semiconductor body which has a photoelectric conversion function and which includes at least photosensitive elements and switching elements, and predetermined color filters which are formed on the body; characterized in that a light absorbing layer is disposed at least over a vicinity of an output terminal of each switching element. The contours of the color filters can be accurately formed, and unnecessary light can be intercepted to stabilize the electrical characteristics of the solid-state imager.

Growing community of inventors

Tokyo, Japan

Norio Koike