Renesas Electronics Corporation

Renesas Technology Corp.

Norio Kido

Katsuo Ishizaka

Yukihiro Sato

Akira Mishima

Takuro Kanazawa

Tetsuo Iijima

Kentaro Ochi

Hiroyuki Nakamura

Ichio Shimizu

Nobuya Koike

Akira Muto

Atsushi Fujiki

Tatsuhiro Seki

Shunichi Kaeriyama

There is to provide a power conversion device capable of estimating a junction temperature of a power transistor at a high accuracy. The control device includes a temperature estimation unit and controls the on and off of the power transistor through a driver. The voltage detection circuit detects the inter-terminal voltage of a source and drain terminals during the on-period of the power transistor. The temperature estimation unit previously holds the correlation information between the inter-terminal voltage and inter-terminal current of the source and drain terminals and the junction temperature, and estimates the junction temperature, based on the inter-terminal voltage detected by the voltage detection circuit, the known inter-terminal current, and the correlation information.

Power conversion device and semiconductor device

An electronic apparatus includes a wiring board including a main surface on which a first wiring and a second wiring are formed, a first semiconductor device mounted on the main surface of the wiring board, and a second semiconductor device mounted on the main surface of the wiring board. Each of the first semiconductor device and the second semiconductor device includes a first semiconductor chip including an insulated gate bipolar transistor, a second semiconductor chip including a diode, a first lead electrically connected to an emitter electrode pad formed on a first front surface of the first semiconductor chip, a second lead electrically connected to an anode electrode pad formed on a second front surface of the second semiconductor chip, and a first terminal electrically connected to a collector electrode formed on a first back surface of the first semiconductor chip.

Semiconductor device and electronic apparatus including semiconductor chips including an insulated gate bipolar transistor and a diode

For example, a semiconductor device capable of achieving a high performance applicable to an SR motor is provided. The semiconductor device includes a chip mounting portion TABon which a semiconductor chip CHPhaving an IGBT is mounted, and a chip mounting portion TABon which a semiconductor chip CHPhaving a diode is formed. The semiconductor device also includes a lead LDA electrically connected to an emitter electrode pad EP of the semiconductor chip CHPvia a clip CLP, and a lead LDB electrically connected to an anode electrode pad ADP of the semiconductor chip CHPvia a clip CLP. At this time, the chip mounting portion TABis separated electrically from the chip mounting portion TAB, and the clip CLPis separated electrically from the clip CLP

Semiconductor device and electronic apparatus including a first semiconductor chip including an insulated gate bipolar transistor and a second semiconductor chip including a diode

It is made for the layout of the mounting wiring at the time of mounting to become efficient by changing the structure of a semiconductor device. A first chip is mounted on a first die pad, and a second chip is also mounted on a second die pad. A first die pad and a second die pad do division structure in parallel to the first side and second side of sealing body. As a result, the pin for an output from a first chip and the pin for control of the circuit for a drive can make it able to project from a counter direction, and can set the wiring layout at the time of mounting as the minimum route.

Semiconductor device

A semiconductor device formed by using semiconductor packages is provided. The semiconductor device includes two semiconductor packages adjacently arranged in opposite directions on an inductive conductor. Terminals of the two semiconductor packages are joined by a third lead. The third lead is arranged substantially in parallel to the inductive conductor. Leads at the joint portions have, for example, a bent structure, and the third lead is arranged to be close to the inductive conductor.

Semiconductor device for power conversion

A semiconductor device formed by using semiconductor packages is provided. The semiconductor device includes two semiconductor packages adjacently arranged in opposite directions on an inductive conductor. Terminals of the two semiconductor packages are joined by a third lead. the third lead is arranged substantially in parallel to the inductive conductor. Leads at the joint portions have, for example, a bent structure, and the third lead is arranged to be close to the inductive conductor.

A semiconductor device having a plurality of chips is reduced in size. In HSOP (semiconductor device) for driving a three-phase motor, a first semiconductor chip including a pMISFET and a second semiconductor chip including an nMISFET are mounted over each of a first tab, second tab, and third tab. The drains of the pMISFET and nMISFET over each tab are electrically connected with each other. Thus, two of six MISFETs can be placed over each of three tabs divided in correspondence with the number of phases of the motor, and they can be packaged in one in a compact manner. As a result, the size of the HSOP for driving a three-phase motor, having a plurality of chips can be reduced.

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Tokyo, Japan

Norio Kido