Hitachi, Ltd.

Norio Kanai

Naoyuki Tamura

Tsunehiko Tsubone

Kunio Harada

Tatsumi Mizutani

Norio Nakazato

Yutaka Kakehi

Hideaki Kamohara

Hideo Komatsu

Yoshimasa Fukushima

Kazuaki Ichihashi

Fumio Shibata

Shinya Iida

A vacuum apparatus comprising a substrate setting disc which is arranged in a conveyance chamber and on which substrates are placed, a drive system which drives and rotates the disc, a cam which is fixed to the disc, switching means to switch signal circuits through the cam, calculation means to receive digital signals generated by the switching operations of the switching means, signals from the drive system and signals from respective processing devices so as to execute calculations, a memory which registers calculated results, and a display unit which displays the registered contents on a screen, rotational positions of the disc being loaded so as to control the hysteretic aspects of the individual substrates within the conveyance chamber with the substrates at the respective positions and addresses held in correspondence.

Vacuum apparatus

A vacuum processing unit and apparatus comprises a buffer chamber that can be evacuated, a processing chamber that can be communicated with said buffer chamber a first sample carrier installed in said buffer chamber, a vacuum opening/closing device provided in the buffer chamber to correspond to the first sample carrier, a vacuum prechamber provided for the buffer chamber via the vacuum opening/closing device, a second sample carrier which carries the sample between the vacuum prechamber and the first sample carrier via the vacuum opening/closing device, and a third sample carrier which carries the sample between said first sample carrier and the processing chamber. The vacuum processing units can be connected in groups via vacuum opening/closing devices provided for the buffer chambers in locations corresponding to the end of the first sample carriers therein. The number of connected processing chambers can be freely changed to meet a change in the process or the manufacturing line.

Vacuum processing unit and apparatus

In a molecular beam epitaxy apparatus in accordance with the present invention, transfer means for transferring substrates, which have been transferred from an introduction chamber, to a growth chamber and for transferring the substrates after the growth of a film, which have been transferred from the growth chamber, to a discharge chamber consists of a rotary disc which supports thereon a plurality of substrates and transfers them to the growth chamber and then to the discharge chamber, and all of the introduction chamber, the growth chamber and the discharge chamber are disposed at predetermined positions, respectively, so that the molecular beam crystal growth can be effected in a clean room which is separated from a maintenance room.

Molecular beam epitaxy apparatus

A plasma etcher wherein the provision of a gas outlet directly in an etching chamber is avoided and wherein a subchamber having a sufficient capacity is connected to the etching chamber through a joint part, the gas outlet being provided in this subchamber. With the apparatus, the distribution of etching rates in plasma etching becomes uniform.

Plasma etcher having isotropic subchamber with gas outlet for producing

The present invention relates to an ion implanter which is so constructed that specimens placed in the specimen chamber are caused to move so that ions supplied from an ion source are homogeneously implanted into the surfaces of the specimens, wherein said specimen chamber is so constructed that the whole mechanism which transmits the motion for moving the specimens is surrounded by space which is different from space which includes the specimens.

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Kudamatsu, Japan

Norio Kanai