Hitachi, Ltd.

Hitachi Automotive Systems, Ltd.

Renesas Technology Corp.

Other

Hitachi Astemo Ltd.

Hitachi Ulsi Systems Co., Ltd.

Renesas Electronics Corporation

Elpida Memory, Inc.

Trecenti Technologies, Inc.

Norio Ishitsuka

Norio Suzuki

Shuji Ikeda

Hideo Miura

Yasuko Yoshida

Akira Takamatsu

Shinichi Horibe

Masatoshi Ogata

Masayuki Kojima

Kozo Watanabe

Kenji Kanamitsu

Hiroyuki Ohta

Tomio Iwasaki

Hirohiko Yamamoto

Kazushi Fukuda

Masamichi Kobayashi

Hirofumi Shimizu

Yasushi Matsuda

Toshio Nozoe

Shinobu Tashiro

Takayuki Yogo

Yasuo Onose

Atsushi Ogishima

Keiji Okamoto

Kouzou Watanabe

Hiroyuki Ichizoe

Maki Shimoda

Keiji Hanzawa

Noboru Tokuyasu

Takeshi Morino

Noriyuki Sakuma

Akira Uenodan

Kota Funayama

Tsubasa Watanabe

Michimasa Funabashi

Masahiro Matsumoto

Hiroshi Nakano

Hideki Tanaka

Takahiro Miki

Jun Tanaka

Akihiro Yaguchi

Atsuo Watanabe

Nobuo Owada

Hiroaki Hoshika

Shoji Yoshida

Tsutomu Kono

Takashi Takeuchi

Sueo Kawai

Shigeki Hirasawa

Toshifumi Takeda

Masahiro Ito

Atsushi Maeda

Rintaro Minamitani

Hiroshi Ishida

Yasuhiro Kimura

Nobuyoshi Hattori

Tetsuya Uchida

Yukihiro Kumagai

Mitsutoshi Honda

Masahito Takahashi

Natsuo Yamaguchi

Shinichi Kurita

Hiroyuki Mima

Minoru Abiko

Takehiko Kijima

Toshihito Tabata

Hidekazu Kamioka

An object is to improve measurement accuracy of a thermal air flow meter. A flow-rate measuring device comprising: a sensor assembly having a flow-rate detecting element; a circuit board on which the sensor assembly is mounted; and a housing on which the circuit board is mounted, wherein the sensor assembly is mounted on the circuit board such that a detection portion side of the flow-rate detecting element is closer to the housing, and the sensor assembly includes a contact portion in contact with the housing on the detection portion side.

Flow-rate measuring device

Provided are a semiconductor device and a thermal type fluid flow rate sensor which suppress strain occurring in an aluminum film and suppresses disconnection due to repeated metal fatigue of the aluminum film. The semiconductor device and the thermal type fluid flow rate sensor of the present invention are configured so that the heights of a silicon film and an aluminum film satisfy D&#x3e;Dbetween a flow rate sensor part (immediately above a diaphragm end part) D and a circuit part (LSI part) D

Semiconductor element and flow rate measurement device using same

A device which measures a physical quantity of a gas flowing through a main passage is described. The device includes a flange for fixing to the main passage; a housing that protrudes toward an inside of the main passage from the flange; and a printed circuit board fixed to the housing on which a measuring element that measures the physical quantity is mounted. Wiring of the printed circuit board has a plurality of irregularities formed along one direction of a surface, and the wiring is arranged such that a formation direction of the irregularities is oriented along a protruding direction of the housing toward an inside of the main passage. The irregularities may be polishing marks formed using a cylindrical polishing wheel or rolling marks of the wiring of the printed circuit board.

Physical quantity measurement device

The purpose is to improve the measurement accuracy of a thermal air flow meter. The device has: an auxiliary passage for entraining a portion of a fluid being measured; a sensor chip arranged in the auxiliary passage, for measuring the flow rate of the fluid being measured; an electronic component having an internal resistor, for converting the fluid flow rate detected by the sensor chip to an electrical signal; and a substrate on which the sensor chip and the electronic component are mounted. The substrate is covered by a filler material, on the surface of which the electronic component is mounted.

Thermal air flow meter

To obtain a flow meter with which it is possible to facilitate establishing an electrical connection with a conductor exposed in a location through which a gas to be measured passes. A flow meter that is provided with a lead and a circuit component placed on the lead, and that has a package in which part of the lead is molded from a resin, wherein the package is provided with an exposure portion for exposing part of the lead from the resin member, the exposure portion being electrically connected to a conductor that constitutes part of an auxiliary passage.

Flow meter

In order to provide a thermal flow sensor having high measurement accuracy, the thermal type air flow sensor includes a flow detecting unit, a sub passage on which the flow detecting unit is disposed, and an LSI to which a signal obtained by the flow detecting unit is input and which outputs a signal to the outside. A side wall of the sub passage is disposed between the flow detecting unit and the LSI, or on the LSI. A diffusion resistor provided inside the LSI has its longitudinal direction in parallel with a &#x3c;100&#x3e; orientation of single-crystal Si.

Thermal type air flow sensor

An object of the present invention is to provide a thermal-type air flow meter with a high measurement accuracy by reducing influence of a thermal stress generated in a resistor in an LSI while securing a high positioning accuracy flow rate detection unit. Thus, a thermal-type air flow meter is provided with: a sensor assemblyincluding an LSIhaving a resistorand a flow rate detection unitwhich are configured by insert molding so as to expose at least a part of the flow rate detection unit, a housingwhich has secondary passagesand, and houses the sensor assemblyby allowing the flow rate detection unitto be arranged in the secondary passage, the sensor assemblybeing molded using a first resin, and the housingbeing molded using a second resin, the sensor assemblybeing fixed to the housingusing the second resin; and resin structuresandwhich cause a tensile stress in a direction parallel to a surface on which the flow rate detection unitis exposed with respect to the sensor assembly

Thermal-type air flow meter

A thermal air flow sensor that produces less measurement error is provided. The thermal air flow sensor includes: a semiconductor substrate; a heating resistor, resistance temperature detectors, and an electrical insulator that includes a silicon oxide film, wherein the heating resistor, the resistance temperature detectors, and the electrical insulator are formed on the semiconductor substrate; and a diaphragm portion formed by removing a portion of the semiconductor substrate. The heating resistor and the resistance temperature detectors are formed on the diaphragm portion. The thermal air flow sensor further includes a silicon nitride film formed as the electrical insulator above the heating resistor and the resistance temperature detectors. The silicon nitride film has steps conforming to the patterns of the heating resistor and the resistance temperature detectors. The silicon nitride film has a multilayer structure.

Thermal air flow sensor

A thermal air flow sensor that offers high flow rate measurement accuracy is provided. The thermal air flow sensor includes a measuring element. The measuring element includes: a semiconductor substrate; a heating resistor and a temperature measuring resistor both formed as a result of thin films being stacked over the semiconductor substrate; an electronic insulator including a silicon oxide film; and a diaphragm portion formed after part of the semiconductor substrate is removed. The heating resistor and the temperature measuring resistor are formed over the diaphragm portion. In the thermal air flow sensor, a ratio of an area occupied by the thin films to an area of the measuring element ranges between 40% and 60%.

An objective of the present invention is, in a thermal flow meter having a structure including a resin portion formed in the vicinity of a diaphragm structural portion using a mold, to prevent destruction of the diaphragm structural portion at the time of pressing the mold, in a method of manufacturing the thermal flow meter, including: supporting a gas flow measurement elementon support membersand, the gas flow measurement elementincluding a cavity portionsurrounded by a substrate inclined portioninclined to a substrate surface, a diaphragmthat covers the cavity portion, and an electrical resistive element formed in the diaphragm; and covering the gas flow measurement elementand the support membersandwith the resin portionformed with the mold, to set the moldsuch that an acting portion of pressure force by the mold that molds the resin portionis positioned outside the substrate inclined portionin the entire periphery of the diaphragm

Method of manufacturing thermal flow meter

An object of the present invention is to provide a thermal airflow sensor that prevents moisture absorption by a silicon oxide film formed closest to a surface (formed to be located on an uppermost portion), and that reduces a measuring error. In order to attain the foregoing object, the thermal airflow sensor according to the present invention applies an ion implantation to a silicon oxide film, formed closest to a surface (formed to be located on an uppermost portion), by using an atom or molecule selected from at least any one of silicon, oxygen, and an inert element such as argon or nitrogen, in order to increase a concentration of an atom contained in the silicon oxide filmmore than that before the ion implantation.

Thermal airlflow sensor

A technique that makes it possible to suppress a crystal defect produced in an active area and thereby reduce the fraction defective of semiconductor devices is provided. A first embodiment relates to the planar configuration of SRAM. One of the features of the first embodiment is as illustrated in FIG.. That is, on the precondition that the active areas in n-channel MISFET formation regions are all configured in the isolated structure: the width of the terminal sections is made larger than the width of the central parts of the active areas. For example, the terminal sections are formed in an L shape.

Semiconductor device with suppressed crystal defects in active areas

A dielectrically isolated semiconductor device of high reliability is provided by realizing a fine and deep element isolating region which can prevent dislocation of an oxide film as an insulation layer by oxidation-induced stress. The dielectrically isolated semiconductor device includes an SOI substrate supporting an active element layer deeper than an expanded distance of a depletion layer subjected to the highest voltage applied to the device, and an element isolating region which encloses the active element layer. The element isolating region contains a deep trench which comes into contact with the insulation layer, and which is filled with n heavily doped layers on both side walls, second insulation films each adjacent to the n heavily doped layer and a polycrystalline semiconductor layer formed between the second insulation films.

Dielectric material separated-type, high breakdown voltage semiconductor circuit device, and production method thereof

After a gate electrode is formed on a main surface of a semiconductor substrate, low concentration layers are formed on the main surface of the semiconductor substrate by implanting impurities therein, with using the gate electrode as a mask. Thereafter, first sidewalls and second sidewalls are formed on the both side surfaces of the gate electrode. Subsequently, nitrogen or the like is ion-implanted into the semiconductor substrate, with using the first sidewalls, the second sidewalls and the gate electrode as a mask, thereby forming a crystallization-control region (CCR) on the main surface of the semiconductor substrate. Then, after the second sidewalls are removed, high concentration layers for a source and a drain are formed on the main surface of the semiconductor substrate.

Method of manufacturing a semiconductor device

A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in the center portion of the active region but falls toward the side wall of the element isolation trench in the shoulder portion of the active region. This inclined surface contains two inclined surfaces having different inclination angles. The first inclined surface near the center portion of the active region is relatively steep and the second inclined surface near the side wall of the element isolation trench is gentler than the first inclined surface. The surface of the substrate in the shoulder portion of the active region is wholly rounded and has no angular portion.

Method of manufacturing a semiconductor integrated circuit device having a trench

Growing community of inventors

Chiyoda, Japan

Norio Ishitsuka