Winbond Electronics Corporation

Norio Hattori

Masaru Yano

Ping-Kun Wang

Seow Fong Lim

Chien-Min Wu

He-Hsuan Chao

Chih-Hua Hung

Provided is a variable resistance random-access memory for suppressing degradation of performance by recovering a memory cell that fails. A variable resistance random-access memory of the disclosure includes a memory array, a row selection circuit, a column selection circuit, a controller, an error checking and correcting (ECC) circuit, an error bit flag register, and an error bit address register. The memory array includes a plurality of memory cells. The column selection circuit includes a sense amplifier and a write driver/read bias circuit. The error bit flag register stores bits for indicating presence/absence of an error bit in a write operation. The error bit address register stores an address of the error bit. The controller recovers the error bit when a predetermined event occurs.

Variable resistance random-access memory and method for write operation having error bit recovering function thereof

A semiconductor memory device capable of smoothing the number of cycles of programming/erasing between blocks is provided. The semiconductor memory device includes: a memory cell array; an address translation table defining a relationship between logical address information and physical address information; an invalid block table managing the physical address information for identifying to-be-erased blocks of the blocks; a free block table managing the physical address information used for identifying erased usable blocks; an erasing element for erasing the blocks; a controller. When an erasing command and first logical address information are received from environment, the controller erases the block of the physical address information selected from the invalid block table, and rewrites the address translation table in a manner that the physical address information selected from the free block table corresponds to the first logical address information received from the external environment.

Semiconductor memory device

A semiconductor storage device exhibiting improved programming reliability is provided. In the disclosure, flash memory includes a storage controller and a NAND type storage device. The storage controller includes a voltage detecting part, SRAM, RRAM, and a writer/selector. The voltage detecting part detects whether a power supply voltage drops to a fixed voltage. The SRAM stores a conversion table for converting a logical address into a physical address. The RRAM stores the logical address of a block and a page currently being programmed and conversion information for converting the logical address into another physical address when the fixed voltage is detected by the voltage detecting part during a programming process. The writer/selector converts the inputted logical address into the physical address according to the conversion table or the conversion information of the RRAM and programs data on the page of the block selected according to the converted physical address.

Semiconductor storage device for improved page reliability

A resistive memory and a method for writing data thereof are provided. The method for writing data includes: receiving a write-in data and generating an inverted write-in data; reading a current data in a plurality of selected memory cells; comparing the current data with the write-in data and the inverted write-in data; selecting the write-in data or the inverted write-in data to generate a final data according to a comparison result; and writing the final data into the selected memory cells.

Resistive memory apparatus and method for writing data thereof

A semiconductor storage apparatus of high convenience, which improves utilization efficiency of a memory region, is provided. A flash memory provided in the disclosure includes a memory controller and an NAND memory device. The memory controller includes an SRAM, an RRAM, and a write/selector. The SRAM stores a conversion table that converts a logical address into a physical address. The RRAM temporarily stores a small amount of data which should be programmed. The write/selector selectively writes the to-be-programmed data into the RRAM or an NAND memory unit of the NAND memory device.

Semiconductor storage apparatus

A semiconductor memory device for suppressing a decrease of durability caused by erasure of a block unit or programming of a word unit is provided. A resistance change memoryincludes a memory arrayand a controller. The memory arraystores data by a reversible and nonvolatile variable resistance element. When erasing a selected block of the memory arrayin response to an external erasure command, the controllersets an EF flag indicating the selected block is in an erasure state without changing block data. The controllerfurther includes a reading unit. The reading unit outputs data of a selected word or data indicating the erasure based on the EF flag when reading the selected word of the memory arrayin response to an external reading command.

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Kanagawa, Japan

Norio Hattori