Kabushiki Kaisha Toyota Chuo Kenkyusho

Denso Corporation

Norio Fujitsuka

Yutaka Nonomura

Yoshiteru Omura

Keiichi Shimaoka

Teruhisa Akashi

Motohiro Fujiyoshi

Takashi Ozaki

Isao Aoyagi

Kanae Murata

Hirofumi Funabashi

Minekazu Sakai

Takahiko Yoshida

Hiroyuki Matsubara

Kouji Tsukada

Kazuyoshi Tomita

Jiro Sakata

Kentaro Mizuno

Yoshiki Ninomiya

Shota Harada

Yuuki Inagaki

Yuichi Tanaka

Keitaro Ito

Yoshiyuki Hata

Tetsuo Narita

Katsuaki Goto

Toshiyuki Tsuchiya

Yasuichi Mitsushima

A molding device may comprise a mold, a plate, and a ring. The mold may comprise: a lower surface; an upper surface parallel to the lower surface; a hole defined in a part of the upper surface; and a through hole extending from a bottom surface of the hole to the lower surface of the mold. The plate may comprise a surface with a gas outlet defined therein. The ring may be arranged between the lower surface of the mold and the surface of the plate and connecting the mold and the plate. The ring may surround the through hole exposed on the lower surface of the mold and the gas outlet exposed on the surface of the plate. In a region where the ring is not arranged, a space may be defined between the lower surface of the mold and the surface of the plate.

Molding device

The present application discloses a deflector including a substrate portion, a movable portion, a reflective portion, a support portion, and a moving mechanism. The movable portion is supported by a first end of the support portion. A second end of the support portion is supported by the substrate portion. An end of the movable portion is capable of coming into contact with the substrate portion. The reflective portion is formed on the movable portion. The moving mechanism is capable of driving the movable portion so as to bring the movable portion into at least any one of a first state, a second state, a third state, and a fourth state.

Deflector

Teaching disclosed herein is an apparatus comprising a support layer. The support layer may be adapted for supporting a heat generator, wherein the support layer includes a flow passage. The flow passage may seal working fluid therein. The flow passage may extend along a thickness direction of the support layer.

Apparatus and method of manufacturing a support layer

Provided is technique for a semiconductor device including a substrate and a tilting plate which is tiltable relatively to the substrate, the technique being capable of effectively suppressing warpage of the tilting plate. The semiconductor device of the present specification includes a substrate and a tilting plate which is tiltable relatively to the substrate. In the semiconductor device, a rib formed of wavelike portions where a plate thickness is substantially uniform is formed on the tilting plate.

Semiconductor device

An alerting illumination device, which includes a detecting component, a danger degree estimating component, a danger assuming component, an illuminating component and a controlling component, is provided. The danger degree estimating component estimates a degree of danger, with respect to a subject vehicle, of the person detected by the detecting component. The danger assuming component, on the basis of the estimated degree of danger, assumes whether or not the person detected by the detecting component is a danger with respect to the subject vehicle. The illuminating component illuminates light. The controlling component, in a case in which the danger assuming component assumes that the person is a danger, controls the illuminating component such that light, which shows a direction of the person who is assumed to be a danger and a distance to the person, is illuminated onto a road surface.

Alerting illumination device

Force detection devices may have high detection precision and may prevent current leakage through a strain gageto the outside. For example, a force detection blockmay include a semiconductor substrate, a first insulating layerand a semiconductor layer(strain gage). The strain gagepreferably includes a site where resistance changes in accordance with the stress acting thereon. The strain gagepreferably constitutes at least a portion of a ridgeprojects from the surface of the force detection block. A force transmission blockmay be attached to a top surface of the ridge. The width of the first insulating layeris preferably greater than the width of the semiconductor layer

Piezoresistive transducers

A capacitive device includes a substrate, a movable electrode, and a fixed electrode. The movable electrode is located above a surface of the substrate and is movable with respect to the substrate along directions that are substantially orthogonal to the surface. The fixed electrode is stationary with respect to the substrate. When the movable electrode is displaced in a first direction that is substantially orthogonal to the surface, the total sum of area-distance quotients in the overlap between the electrodes remains substantially unchanged or decreases to provide a first reduction rate that is substantially zero or more. On the other hand, when the movable electrode is displaced in a second direction that is substantially opposite to the first direction, the total sum of area-distance quotients remains substantially unchanged or decreases to provide a second reduction rate that is substantially zero or more. The reduction rates are different from each other.

Capacitive device

A detector has first and second excitation beams extending along X-axis and Y-axis directions. These beams are fixed to a substrate via an intersecting portion. Mass portions are disposed at free ends of the beams. Sensing electrodes are disposed at the central portions of the mass portions to face the mass portions. By electrostatic force generated between the excitation electrodes and the mass portions, two mass portions vibrate in the Y-axis direction, while the remaining two mass portions vibrate in the X-axis direction. When an angular velocity .OMEGA..sub.x acts about the X axis, Z-axis Coriolis forces F.sub.1a and F.sub.1b act on the mass portions that are vibrating in the Y-axis direction. When an angular velocity .OMEGA..sub.y acts about the Y axis, Z-axis Coriolis forces F.sub.2a and F.sub.2b act on the mass portions that are vibrating in the X-axis direction. These vibrations are detected by the sensing electrodes in order to detect the angular velocities .OMEGA..sub.x and .OMEGA..sub.y.

Detector for detecting angular velocities about perpendicular axes

A resonance type angular velocity sensor is provided with a mass displacement supporting beam (20, 21, 22, 23) for supporting a vibration in a detecting direction due to a Coriolis force of a mass portion (1) and a mass excitation supporting beam for supporting a mass displacement supporting base portion (24, 25) in such a manner as to allow the mass portion (1) to vibrate away from the beam in an excitation direction. When the mass displacement supporting base portion (24) is excited in the excitation direction by an opposing comb exciting electrode (51), the mass portion (1) vibrates. A projecting electrode (31) is provided in a side surface of the Coriolis force detecting direction of the mass portion (1) and capacity detecting electrodes (30, 32) are disposed in such a manner as to oppose this. When the Coriolis force acts on the mass portion (1) vibrating in the excitation direction, the mass portion (1) vibrates also in the detecting direction so that the capacity change is detected by the capacity detecting electrodes (30, 32). In such a case, it is possible to provide a mechanism for applying a stress to the beam members (10, 11, 12, 13, 14, 15, 16, 17) so as to adjust the exciting frequency.

Resonance type angular velocity sensor

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Nisshin, Japan

Norio Fujitsuka