Semiconductor Energy Laboratory Co., Ltd.

Noriko Harima

Kensuke Yoshizumi

Yoshiyuki Kurokawa

Takayuki Ikeda

Atsuo Isobe

Akihisa Shimomura

Kosei Noda

Takashi Hamada

Tomoko Yamada

Kazuko Yamawaki

Noriko Matsumoto

A memory device is provided, which includes a first conductive layer, a second conductive layer, and a memory layer interposed between the first conductive layer and the second conductive layer. The memory layer includes a first portion and a second portion, each of which includes at least a nanoparticle. The nanoparticle includes a conductive material coated with an organic film. The first portion is in contact with the first conductive layer and the second conductive layer, and a side surface of the first portion is surrounded by the second portion.

Memory device in a programmed state having a memory layer comprising conductive nanoparticles coated with an organic film formed between two conductive layers

An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type.

Method for manufacturing semiconductor device including a photoelectric conversion element

In a coating method, such as a droplet discharge method which requires baking, it is an object of the present invention to reduce the baking temperature at the time of forming a wiring and a conductive film. As a feature of the present invention, a composition, in which nanoparticles of a conductive material are dispersed in a solvent, is discharged using a droplet discharge method, and then dried to vaporize the solvent. Then, pretreatment using active oxygen is performed. After which, baking is then performed, whereby a wiring and a conductive film are formed. By performance of the pretreatment by active oxygen before the baking, a baking temperature at the time of forming the wiring and conductive film can be reduced.

Manufacturing method of wiring and storage element

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Kanagawa, Japan

Noriko Harima