Tokyo Electron Limited

Norikazu Sugiyama

Susumu Saito

Jun Ozawa

Nobuyuki Okayama

Hidehito Saegusa

A plasma etching apparatus for a semiconductor wafer generates plasma in a plasma generation space between a susceptor and a showerhead. A shield member is detachably disposed inside the sidewall of a process chamber to prevent reaction products from sticking to the sidewall. A window device is arranged to lead plasma light emitted from plasma out of the process chamber. The window device includes a quartz window plate airtightly attached to the sidewall of the process chamber. The window device also includes an aluminum light guide having a number of capillary through holes for guiding the plasma light to the window plate, and a sapphire cover plate disposed between the window plate and the light guide and covering the openings of the through holes. The light guide and the cover plate are attached to the shield member.

Plasma processing apparatus

The present invention provides a process apparatus including an airtight process vessel, an exhaust system for exhausting gas from the process vessel, and a baffle plate for partitioning the process vessel into a process chamber for processing an object and an exhaust passage communicating with the exhaust system, the baffle plate has a plurality of slits through which the process chamber and the exhaust passage communicate with each other, and each of the slits has a tapered surface on an inner surface toward the process chamber, the tapered surface corresponding to not less than &frac14; of a depth of the slit.

Growing community of inventors

Higashiyatsushiro-gun, Japan

Norikazu Sugiyama