Mitsubishi Electric Corporation

Fuji Electric Co., Ltd.

Senju Metal Industry Co., Ltd.

Misawa Homes Co., Ltd.

Norikazu Sakai

Hiroshi Yoshida

Yoshihiro Yamaguchi

Koji Tanaka

Shinya Soneda

Takashi Yoshida

Koichi Nishi

Taketoshi Shikano

Hidetoshi Ishibashi

Yoshie Tachibana

Nobuhiro Asaji

Yukimi Ichikawa

Tomoki Sasaki

Masanori Tsukuda

A first principal electrode and a first control electrode pad are formed on a first principal surface of the semiconductor chip. A second principal electrode and a second control electrode pad are formed on a second principal surface of the semiconductor chip. The second principal electrode and the second control electrode pad are respectively bonded to first and second metal patterns of an insulating substrate. Bonding sections of first and second wires overlap a bonding section of the second principal electrode or the second control electrode pad in plan view. Thickness of the first and second metal patterns is 0.2 mm or less.

Semiconductor device

Provided are a solder alloy, a solder powder, a solder paste, and a solder joint having a low liquidus temperature and not too low solidus temperature. The solder alloy has an alloy composition of, by mass: Ag: 2.0 to 4.0%; Cu: 0.51 to 0.79%; and Bi: more than 4.0% and 8.0% or less, with the balance being Sn. The solder alloy has a liquidus temperature of less than 217° C.

Solder alloy, solder powder, solder paste and solder joint

An object of the present disclosure is to suppress a shrinkage cavity without affecting the layout or the insulation performance of the semiconductor element in a power semiconductor device. A power semiconductor device includes a heat radiation plate; an insulating substrate bonded in a bonding region on an upper surface of the heat radiation plate with a bonding material containing a plurality of elements having different solidification points; a semiconductor element mounted on an upper surface of the insulating substrate; and a bonding wire bonded in the bonding region on the upper surface of the heat radiation plate such that the bonding wire surrounds the semiconductor element in plan view.

Power semiconductor device and manufacturing method thereof

A metal mask is disposed on a copper base plate. A solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste on each of copper plates of the copper base plate. A semiconductor element and a conductive component are placed on the respective patterns of the solder pastes. A metal mask is disposed on the copper base plate. Then, a solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste covering each of the semiconductor element and the conductive component. A large-capacity relay board is disposed so as to come into contact with a corresponding pattern of the solder paste. A power semiconductor device is completed by performing heat treatment under a temperature condition of 200&#xb0; C. or higher.

Method of manufacturing power semiconductor device and power semiconductor device

In a sheet-shaped solar module mounting structure, rail members include locking members to which the end portions of sheet-shaped solar batteries are locked, so that, in mounting the sheet-shaped solar batteries to a roof bed, it is unnecessary to nail the solar batteries to the roof bed with screws or the like.

Sheet-shaped solar module mounting structure

Growing community of inventors

Tokyo, Japan

Norikazu Sakai