Sony Corporation

Sony Semiconductor Solutions Corporation

Other

Arai, Hiroyuki

Norikazu Nakayama

Akira Ishibashi

Nobuyuki Matsuzawa

Yoshiaki Obana

Yuta Hasegawa

Ichiro Takemura

Tetsuji Yamaguchi

Iwao Yagi

Hideaki Mogi

Masami Shimokawa

Hiroichi Ishikawa

Satoshi Ito

Tomoharu Mukasa

Atsushi Toda

Hideki Ono

Kazuhito Hori

Takuya Makino

Satoru Kijima

Kanji Yokomizo

Futoshi Hiei

Takashi Kobayashi

Hiroyuki Arai

Takayuki Hirabayashi

Yosuke Saito

Satoshi Taniguchi

Hiroji Kawai

Tomonori Hino

Akihiko Okubora

Osamu Enoki

Yoshifumi Mori

Kazuaki Yazawa

Kazushi Nakano

Yuichi Ishida

Takayuki Kawasumi

Osamu Matsuda

Toshimasa Kobayashi

Yuki Negishi

Toyoharu Ohata

Hiroyuki Ryoson

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Photoelectric conversion element and solid-state imaging device

A photoelectric conversion element according to the disclosure includes: a first electrode and a second electrode that are disposed to face each other; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least one kind of polycyclic aromatic compound represented by any one of the following general formula (1), the following general formula (2), and the following general formula (3): 

A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

Solid-state imaging device to improve photoelectric efficiency

Provided is a vibrating device which can generate efficient vibrations in a vibrating member and efficiently apply vibrations to a gas, a jet flow generating device in which the vibrating device has been implemented, and an electronic device in which the jet flow generating device has been implemented. A jet flow generating devicehas a vibrating deviceincluding a frame, and actuatormounted on the frame, and a vibrating membersupported on the frameby an elastic supporting member. The vibrating memberhas a side plateformed on the perimeter portion of a disc-shaped vibrating plate, for example. Vibration of the vibrating memberapplies vibrations to air within chambersand, whereby gas can alternatingly be blown from nozzlesand

Vibrating device, jet flow generating device, electronic device, and manufacturing method of vibrating device

A jet flow generating apparatus that suppresses noise as much as possible and effectively radiates the heat generated by a heat generating member, an electronic device that is equipped with the jet flow generating apparatus, and a jet flow generating method are provided. According to the present invention, a jet flow generating apparatus comprises a plurality of chambers each having an opening and each containing a coolant, a vibrating mechanism for vibrating the coolant contained in each of the plurality of chambers so as to discharge the coolant as a pulsating flow through the openings, and a control unit for controlling the vibration of the vibrating mechanism so that the sound waves generated by the coolant discharged from the plurality of chambers weaken each other.

Jet flow generating apparatus, electronic apparatus, and jet flow generating method

Disclosed is a light-emitting device. The light-emitting device includes an EL layer and a heat dissipation layer. The EL layer includes a first semiconductor layer, a second semiconductor layer, and an active layer, the first semiconductor layer having a first conductivity type that is one of n type and p type, the second semiconductor layer having a second conductivity type that is opposite to the first conductivity type, the active layer being provided between the first semiconductor layer and the second semiconductor layer. The heat dissipation layer has the first conductivity type and is bonded to a side of the EL layer closer to the second semiconductor layer than the first semiconductor layer.

Light-emitting device, electronic apparatus, and light-emitting device manufacturing method

A jet generating device includes a vibrating member which vibrates gas, a driving unit which drives the vibrating member, and a housing which has a first opening and a first chamber connected to the first opening and containing the gas. The housing supports the vibrating member, and is such that, of sounds generated as a result of vibrating the vibrating member, the sound having a maximum noise level has a predetermined frequency. In addition, the housing discharges the gas as pulsating gas through the first opening as a result of driving the vibrating member.

Jet generating device and electronic apparatus

A jet generating device includes a housing having an opening and containing gas therein, a vibrating member which is supported by the housing so that the vibrating member is capable of vibrating and which vibrates the gas to discharge the gas as pulsating gas through the opening, a driving mechanism for driving the vibrating member in accordance with an electrical signal, and a drive controller which generates the electrical signal at a fundamental frequency at which an input impedance of the driving mechanism is substantially a maximum and which outputs the generated electrical signal to the driving mechanism.

The present invention is directed to a capacitor apparatus of the capacity variable type. This capacitor apparatus is manufactured by Micro Electro-Mechanical System technology, and comprises an insulating substrate () in which at least two capacitor electrodes (), () are formed on one surface () in the state where they are insulated each other, an actuator () formed by insulating material and having an external shape to bridge over the respective capacitor electrodes (), (), the actuator () being such that a conductor which respectively constitutes capacitors between the conductor () and these capacitor electrodes (), (), and drive means () for allowing this actuator () to undergo an operation to come into contact with one principal surface () of the insulating substrate () or to become away therefrom.

Capacitor apparatus of the capacity variable type

The present invention is directed to a capacitor apparatus of the capacity variable type. This capacitor apparatus is manufactured by Micro Electro-Mechanical System technology, and comprises an insulating substrate () in which at least two capacitor electrodes (), () are formed on one surface (a) in the state where they are insulated each other, an actuator () formed by insulating material and having an external shape to bridge over the respective capacitor electrodes (), (), the actuator () being such that a conductor which respectively constitutes capacitors between the conductor () and these capacitor electrodes (), (), and drive means () for allowing this actuator () to undergo an operation to come into contact with one principal surface (a) of the insulating substrate () or to become away therefrom.

Growing community of inventors

Kanagawa, Japan

Norikazu Nakayama