Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Kokusai Electric Co., Ltd.

Norikazu Mizuno

Masayuki Asai

Kazuyuki Okuda

Yoshiro Hirose

Hironobu Miya

Masanori Sakai

Taketoshi Sato

Kenji Kanayama

Kazuyuki Toyoda

Takaaki Noda

Hideki Horita

Yushin Takasawa

Kiyohiko Maeda

Yasuhiro Inokuchi

Yosuke Ota

Kazutaka Yanagita

Tomohide Kato

Tomoki Imamura

Arito Ogawa

Kenichi Suzaki

Shingo Okubo

Takashi Ozaki

Hirohisa Yamazaki

Atsuro Seino

Koei Kuribayashi

Takuya Joda

Shinya Sasaki

Atsuhiko Ashitani

Katsuko Higashino

Kota Kowa

Shogo Hayasaka

Yutaka Nishino

A film having film continuity can be formed. There is provided a technique including: preparing a substrate having a metal-containing film formed on a surface thereof; and slimming the metal-containing film by pulse-supplying a halogen-containing gas to the substrate.

Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer on a substrate by performing a first layer forming cycle once or more, wherein the first layer forming cycle includes: (a1) supplying a first element-containing gas to the substrate in a process chamber; and (a2) supplying a first reducing gas to the substrate a plurality of times, and wherein (a1) and (a2) are sequentially performed; and (b) forming a second layer on the first layer by performing a second layer forming cycle once or more after (a), wherein the second layer forming cycle includes: (b1) supplying a second element-containing gas to the substrate; and (b2) supplying a second reducing gas to the substrate, and wherein (b1) and (b2) are sequentially performed.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided technique including: forming film on substrate by performing cycle, predetermined number of times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate, wherein in (a), at least one selected from the group of the precursor gas and the inert gas stored in first tank is supplied to the substrate, and at least one selected from the group of the precursor gas and the inert gas stored in second tank is supplied to the substrate, and concentration of the precursor gas in the first tank while at least one selected from the group of the precursor gas and the inert gas is stored in the first tank differs from that in the second tank while at least one selected from the group of the precursor gas and the inert gas is stored in the second tank.

Method of processing substate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si&#x2014;C bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Provided are: forming a thin film made of a specific element alone on a substrate by performing a specific number of times a cycle of: supplying a first source to the substrate, the first source containing the specific element and a halogen-group; and supplying a second source to the substrate, the second source containing the specific element and an amino-group, and having amino-group-containing ligands whose number is two or less in its composition formula and not more than the number of halogen-group-containing ligands in the composition formula of the first source.

Method of manufacturing a semiconductor device, substrate processing apparatus and recording medium

A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate. In the act of supplying the precursor gas, the precursor gas is supplied to the substrate in a state where a catalytic gas is not supplied to the substrate, and in the act of supplying the ozone gas, the ozone gas is supplied to the substrate in a state where an amine-based catalytic gas is supplied to the substrate.

There is provided a method for manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle one or more times. The cycle includes forming a first layer containing silicon, nitrogen, and carbon by supplying a first silane-based source having a halogen-based ligand to the substrate and supplying a second silane-based source having amino groups to the substrate. The cycle also includes forming a second layer by modifying the first layer by performing supplying a reactive gas different from each of the sources, to the substrate.

Method for manufacturing semiconductor device, method for processing substrate and substrate processing apparatus

An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.

Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus

There is provided a substrate processing apparatus, including a processing chamber configured to house a substrate, a first source supply system configured to supply a chlorosilane-based source to the substrate in the processing chamber, a second source supply system configured to supply an aminosilane-based source to the substrate in the processing chamber and a reactive gas supply system configured to supply a reactive gas different from each of the sources, to the substrate in the processing chamber. The substrate processing apparatus further includes a controller configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that a process of forming an insulating film on the substrate is performed by an alternating process.

Substrate processing apparatus

There is provided a method for manufacturing a semiconductor device, including forming an insulating film having a prescribed composition and a prescribed film thickness on a substrate by alternately performing the following steps prescribed number of times: supplying one of the sources of a chlorosilane-based source and an aminosilane-based source to a substrate in a processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon on the substrate; and supplying a reactive gas different from each of the sources, to the substrate in the processing chamber, to modify the first layer and form a second layer.

An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.

A thin film can be formed on a substrate at a low temperature with a practicable film-forming rate. There is provided a semiconductor device manufacturing method for forming an oxide or nitride film on a substrate. The method comprises: exposing the substrate to a source gas; exposing the substrate to a modification gas comprising an oxidizing gas or a nitriding gas, wherein an atom has electronegativity different from that of another atom in molecules of the oxidizing gas or the nitriding gas; and exposing the substrate to a catalyst. The catalyst has acid dissociation constant pKin a range from 5 to 7, but a pyridine is not used as the catalyst.

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Toyama, Japan

Norikazu Mizuno