Kyocera Corporation

Norikazu Ito

Koichiro Niira

Tsuyoshi Teramura

Akira Murao

Shinichiro Inaba

Kenji Kusuhara

Takemichi Honma

Kenji Fukuchi

Hiroshi Matsui

Takahiro Arima

A solar battery device includes a semiconductor substrate and a covering part. The semiconductor substrate has a first semiconductor region and a second semiconductor region. The first semiconductor region is a first-conductivity-type semiconductor region located on a first surface of the semiconductor substrate. The second semiconductor region is a second-conductivity-type semiconductor region different from the first-conductivity-type and located on a second surface opposite from the first surface. The covering part is located on the first surface of the semiconductor substrate. The covering part has a laminated portion in which a plurality of layers including a passivation layer and an antireflection layer are present in a laminated state. In the laminated portion, the passivation layer includes a region in which a thickness decreases from an outer peripheral portion toward a central part of the first surface.

Solar battery device and method for manufacturing solar battery device

To improve the yield of a solar cell in its production process, a solar cell includes a semiconductor substrate including a first main surface and a second main surface corresponding to the backside of the first main surface, a busbar electrode on a line extending in a first direction on the second main surface, and end-portion electrodes each being an extension of the busbar electrode on the second main surface and separated from the busbar electrode, and each of the end-portion electrodes having a larger thickness than that of the busbar electrode.

Solar cell and solar cell module

First and second electrodes are apart from each other in a chamber. Plates are disposed on a substrate in the second electrode. Each of the plates comprises first and second parts for supplying first and second gas to a space between the first and second electrodes, respectively, a first supply path for first gas connected to the first part, and a second supply path for second gas connected to the second part. The substrate comprises a heater for the first gas, a first introducing path for introducing the first gas to the first supply path, and a second introducing path for introducing the second gas to the second supply path. The second supply path comprises a mainstream part without the second part and branch parts with the second part. A connecting portion of the second introducing path and the mainstream part is positioned in an adjacent portion of the plates.

Apparatus for forming deposited film

Disclosed is a method for manufacturing a thin-film solar cell using plasma between a couple of parallel electrodes. In the method, a base member is placed in a chamber between a first electrode and a second electrode facing each other. A hydrogen gas is heated, and thus heated hydrogen gas and a silicon-based gas are introduced into a space between the first electrode and the second electrode. A ratio of a flow rate of the heated hydrogen gas to that of the silicon-based gas is at least 25 and no more than 58. A plasma is generated between the first electrode and the second electrode by applying high-frequency power to the second electrode while a pressure in the chamber is 1000 Pa or higher, and an optically active layer containing crystalline silicon is deposited on the base material.

Method for manufacturing a thin-film solar cell using a plasma between parallel electrodes

In order to form a high quality film without causing in-plane nonuniformity in film quality, an apparatus for forming deposited film according to an aspect of the present invention includes: a chamber; a first electrode located in the chamber; a second electrode that is located in the chamber with a predetermined spacing from the first electrode and includes a plurality of supply parts configured to supply material gases; an introduction path connected to the supply parts, through which the material gases are introduced; a heater located in the introduction path; and a cooling mechanism configured to cool the second electrode.

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Moriyama, Japan

Norikazu Ito