Toyoda Gosei Co., Ltd.

Other

Sharp Kabushiki Kaisha Corporation

Research Development Corporation of Japan

Nagoya University

Kabushiki Kaisha Toyota Chuo Kenkyusho

Japan Science and Technology Agency

Research Development Corporation

Nobuhiko Swaki

Norikatsu Koide

Hisaki Kato

Isamu Akasaki

Shiro Yamazaki

Katsuhide Manabe

Michinari Sassa

Masayoshi Koike

Shinya Asami

Akira Mabuchi

Masafumi Hashimoto

Shiro Yamasaki

Junichi Umezaki

Seiji Nagai

Hiroshi Amano

Nobuhiko Sawaki

Hiroshi Watanabe

Yoshio Honda

Toshio Hata

Naoki Shibata

Katsuki Furukawa

Mayuko Fudeta

Daigaku Kimura

Masahito Yamaguchi

Shigetoshi Ito

Yoshiyuki Takahira

Tomoki Ono

Makoto Asai

Kensaku Yamamoto

Takeshi Nishino

Akio Aioi

Junji Yamamoto

Yousuke Kuroiwa

Masafumi Hasimoto

Norifumi Kameshiro

Tsuyoshi Dohkita

The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

Nitride-based semiconductor light emitting device and manufacturing method thereof

An AlGaN layeris formed on a silicon substratein a striped or grid pattern. A GaN layeris formed in regions A where the substrateis exposed and in regions B which are defined above the layer. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the AlGaN layer. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrateis exposed).

Method for manufacturing gallium nitride compound semiconductor

Group III nitride compound semiconductor

Nitride-based semiconductor light-emitting device and manufacturing method thereof

A barrier layer made of AlGaN (0&#x3c;x&#x2266;0.18) is formed in a light-emitting semiconductor device using gallium nitride compound having a multi quantum-well (MQW) structure. By controlling a composition ratio x of aluminum (Al) or thickness of the barrier layer, luminous intensity of the device is improved. An n-cladding layer made of AlGaN (0&#x3c;x&#x2266;0.06) is formed in a light-emitting semiconductor device using gallium nitride compound. By controlling a composition ratio x of aluminum or thickness of the n-cladding layer, luminous intensity of the device is improved. A p-type layer and an n-type layer are formed in a light-emitting semiconductor device using gallium nitride compound having a double-hetero junction structure. By controlling a ratio of a hole concentration of the p-type layer and an electron concentration of the n-type layer approximates to 1, luminous intensity of the device is improved.

Light-emitting semiconductor device using gallium nitride compound semiconductor

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlGaN) in which the n-layer of n-type gallium nitride compound semiconductor (AlGaN) is of double-layer structure including an n-layer of low carrier concentration and an n-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlGaN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlGaN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

Method for manufacturing a gallium nitride group compound semiconductor

A novel light-emitting device includes a saphire substrate with a light-emitting layer comprising InGaN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength &#x3bb; of emitted light.

Methods for manufacturing a light-emitting device

An AlGaN layeris formed on a silicon substratein a striped or grid pattern. A GaN layeris formed in regions A where the substrateis exposed and in regions B which are defined above the layerAt this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the AlGaN layerSince the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrateis exposed).

Method for manufacturing gallium nitride group compound semiconductor

A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane. The n-GaN layer is formed on the slope. On the n-GaN layer are formed a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. The active layer has a plane orientation substantially matching the plane orientation of the main plane.

Semiconductor laser device and fabrication method thereof

A layer comprising silicon oxide (SiO) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semiconductor represented by a general formula AlGaInN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;x+y&#x2266;1) is laminated thereon. The group III nitride compound semiconductor represented by a general formula AlGaInN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;x+y&#x2266;1) grows epitaxially on the substrate-exposed regions B which are not covered by the SiOlayer, and grows epitaxially on the SiOlayer in lateral direction from the regions B. Consequently, a group III nitride compound semiconductor having no dislocations can be obtained.

Methods and devices using group III nitride compound semiconductor

A light emitting semiconductor device includes a silicon substrate and a compound semiconductor layer disposed on a main plane of the silicon substrate and represented by a general expression InGaAlN, wherein x+y+z=1, 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x2266;z&#x2266;1. The silicon substrate has a groove having an oblique plane corresponding to a plane inclined relative to the substrate's main plane by 62 degrees or a plane inclined relative to the inclined plane in any direction within three degrees, and on the oblique plane a plurality or quantum well layers different in thickness are stacked.

Light emitting semiconductor device and method of fabricating the same

An Al Ga N layer is formed on a silicon substrate in a striped or grid pattern. A GaN layer is formed in regions A where the substrate is exposed and in regions B which are defined above the layer At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al Ga N layer Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate is exposed).

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al Ga N) in which the n-layer of n-type gallium nitride compound semiconductor (Al Ga N) is of double-layer structure including an n-layer of low carrier concentration and an n -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al Ga N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al Ga N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

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Nara-ken, Japan

Norikatsu Koide