Kao Corporation

Norihito Yamaguchi

Haruhiko Doi

Yoshiaki Oshima

Masaki Inoue

Masato Sugahara

Takanao Seike

Provided is a polishing liquid composition that is able to improve the polishing rate of a silicon oxide film in one aspect. An aspect of the present disclosure relates to a polishing liquid composition for a silicon oxide film. The polishing liquid composition contains cerium oxide particles (component A), an additive (component B), and an aqueous medium. The component B is a compound having a reduction potential of 0.45 V or more when a 10 ppm aqueous solution of the component B is measured by cyclic voltammetry (with an Ag/AgCl electrode as a reference).

Polishing liquid composition for silicon oxide film

A polishing composition containing a silica, an acid, a surfactant, and water, wherein (a) the acid has solubility in water at 25&#xb0; C. of 1 g or more per 100 g of an aqueous saturated solution; (b) the surfactant is a sulfonic acid represented by the formula (1) or (2), or a salt thereof; and (c) the polishing composition has a pH of a specified range; and a polishing process of a substrate using the polishing composition are provided. The polishing composition is suitably used, for example in polishing a substrate for disk recording media such as magnetic disks, optical disks and opto-magnetic disks.

Polishing composition

A polishing composition for a magnetic disk substrate of the present invention includes water, silica particles, and at least one or more selected from an acid, a salt of the acid, and an oxidizing agent. The silica particles are observed with a transmission electron microscope to measure a maximum diameter and a projected area of each particle, and a value obtained by dividing the area of a circle whose diameter is the maximum diameter of a silica particle by the projected area of the silica particle and multiplying the result by 100, is in the range of 100 to 130.

Growing community of inventors

Wakayama, Japan

Norihito Yamaguchi