Sony Corporation

Murata Manufacturing Co., Ltd.

Norihito Kobayashi

Tadahiko Kubota

Takashi Tamura

Masaki Murata

Takahiro Ohe

Ayumi Nihei

Mari Sasaki

Masakazu Muroyama

Kazumasa Takeshi

Hiroki Mita

Shuhei Sugita

Eri Igarashi

A battery, including: a positive electrode; a negative electrode; and an electrolyte layer containing a negative electrode active material.

Battery, battery pack, electronic device, electric vehicle, electricity storage device and electric power system

Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones. The photoelectric conversion element of the present invention includes:

Photoelectric conversion element and solid-state imaging device

There are provided a 6,12-dioxaanthanthrene derivative which is an organic semiconductor material capable of improving resistance to mechanical deformation, an organic semiconductor element, and a method for manufacturing the organic semiconductor element. The 6,12-dioxaanthanthrene derivative is represented by structural formula (1). Rand Rare photopolymerizable unsaturated groups. Rand Rare non-photopolymerizable substituents.

6,12-dioxaanthanthrene derivative, organic semiconductor element, and method for manufacturing organic semiconductor element

Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones. The photoelectric conversion element of the present invention includes (a-1) a first electrodeand a second electrodewhich are disposed apart from each other, and (a-2) a photoelectric conversion material layerthat is disposed between the first electrodeand the second electrode wherein the photoelectric conversion material layeris formed of a dioxaanthanthrene-based compound represented by the following structural formula (1).

Provided is a method of producing an organic transistor, including collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode, a solution including a polymer and at least one of compounds represented by General Formulas 1 to 4 and 5 to 7, a compound having a structure represented by General Formula 4, a compound having a structure represented by General Formula 5 or 6, and forming a source electrode and a drain electrode on the organic semiconductor film. (where R is a linear or branched alkyl group) (where R is an alkyl group) (where R is an alkyl group) (where A1 and A2 are represented by Formula 8) (where R is an alkyl group or another substituent).

Method for producing organic transistor, organic transistor, method for producing semiconductor device, semiconductor device, and electronic apparatus

An anthanthrene based compound of the structural formula (1) is disclosed: 

Anthanthrene based compound and semiconductor device

A semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of Rand Rrepresents a substituent other than hydrogen.

Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film

A method of manufacturing a semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of Rand Rrepresents a substituent other than hydrogen.

Growing community of inventors

Kanagawa, Japan

Norihito Kobayashi