Semiconductor Energy Laboratory Co., Ltd.

Mitsumi Electric Company Ltd.

Ihi Corporation

Other

Ishikawajima-harima Heavy Industries Co., Ltd.

Nippon Steel Chemical Co., Ltd.

Norihito Kawaguchi

Miyuki Masaki

Ryusuke Kawakami

Kenichiro Nishida

Atsushi Yoshinouchi

Masaru Morita

Nobuhito Tanaka

Yoshihiro Satake

Koji Koshimizu

Kenichirou Nishida

Koichiro Tanaka

Takeshi Yamaguchi

Takashi Takeda

Takehito Yagi

Ryota Kageyama

Tsutomu Yamauchi

Mikito Ishii

Shogo Nagata

Yasuaki So

Setsuo Nakajima

Yusuke Ohba

Jun Izawa

Kaoru Usui

Haruhiko Yoshizaki

Daichi Yamashita

A secondary battery protection circuit for a secondary battery includes: a reference voltage circuit configured to generate a reference voltage by using a depletion-type transistor and a transistor unit of enhancement type connected in series with the depletion-type transistor; a voltage divider configured to output a detection voltage obtained by dividing a power source voltage of the secondary battery; a detection circuit configured to detect an abnormal state of the secondary battery based on the reference voltage and the detection voltage; a first adjustment circuit configured to adjust a size ratio of the depletion-type transistor to the transistor unit based on threshold voltages of the depletion-type transistor and the transistor unit; and a second adjustment circuit configured to adjust the detection voltage based on the reference voltage after adjusting the size ratio.

Secondary battery protection circuit

A battery protecting apparatus includes: a charging/discharging control chip including a charging control FET and a discharging control FET connected to a secondary battery; a protecting chip configured to control, based on a voltage between both ends of the secondary battery, the FETs to prevent overcharging, over discharging, and an overcurrent; and a lead frame having a connection surface for a plurality of external terminals and another surface in conduction with the connection surface. Said another surface is electrically connected, via a conductive material, to terminals of the FETs formed on a front surface of the charging/discharging control chip. A back surface of the protecting chip faces a back surface of the charging/discharging control chip via an insulative member. Terminals of the protecting chip are electrically connected to said another surface through bonding wires. The charging/discharging control chip and the protecting chip are covered by a resin.

Battery protecting apparatus

A secondary-battery monitoring device capable of realizing highly reliable overcurrent detection and a battery pack having it are provided. When an overcurrent flowing to a secondary battery is to be detected by utilizing a current detection voltage generated via on-resistance of a discharge-control switch and a charge-control switch, a voltage correction circuit that generates a correction voltage having a characteristic varied by positive slope or negative slope along with increase in a power supply voltage is provided, and the correction voltage is added to the detection voltage or a reference power supply voltage with the polarity that cancels out the slope of voltage variation caused in the detection voltage, and then the voltage is input to a comparator circuit. In this manner, variation in the overcurrent determination current is reduced.

Secondary-battery monitoring device and battery pack

A battery protection IC has detection circuits to detect faults of an overcharge, an over-discharge, and an overcurrent of a secondary battery; a control circuit to protect the secondary battery, by controlling (dis)charging the secondary battery upon the fault; and a delay circuit to generate delay after the fault before the controlling. The IC includes a memory unit to store data for setting and adjusting a circuit characteristic of the IC; and a setting circuit to set and adjust the circuit characteristic, based on the data from the memory unit. The memory unit includes a pair of non-volatile memory cells to complementarily store one bit, and a latch circuit directly cross-coupled with the memory cells, for each bit of the data. The latch circuit statically outputs the data from the memory cells to the setting circuit when the IC is turned on.

Battery protection integrated circuit and circuit characteristic setting method

A battery protection integrated circuit includes a switch unit; a control unit that controls on and off of the switch unit based on a monitored result; a package; a plurality of external connection terminals that are electrically connected to a plurality of terminal portions of the switch unit and the control unit, respectively, all of the external connection terminals that are to be connected to a first terminal of a circuit board being provided at a first short side of the terminal providing surface that faces one of board short sides of a circuit board, and all of the external connection terminals that are to be connected to a second terminal of the circuit board being provided at a second short side that is opposite to the first short side, when being mounted on the circuit board.

Battery protection integrated circuit, battery protection apparatus and battery pack

There is provided a method of correcting an overcurrent detection voltage of a battery protection integrated circuit including a current path between a first terminal and a second terminal, one or more transistors for controlling current of a secondary battery, an overcurrent detection circuit and a control circuit. The method comprises the steps of: measuring a resistance value between the first terminal and the second terminal wherein the one or more transistors are turned on at a predetermined temperature; estimating resistance values between the first terminal and the second terminal at respective temperatures based on the measured resistance value; calculating adjusting data for canceling temperature dependency of charge or discharge current of the secondary battery based on the measured resistance value and the estimated resistance values, wherein a value of the charge or discharge current varies depending on temperature; correcting the overcurrent detection voltage based on the calculated adjusting data.

Method of overcurrent detection voltage correction and battery protection integrated circuit

A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

Laser annealing method and device

Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable. During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a maskwhich is disposed on the optical path of a laser light, and the maskis operated so that the amount of shielding is periodically increased and decreased.

Laser annealing method and apparatus

A laser annealing apparatus is provided that is capable of reducing irradiation unevenness of laser light caused by a refraction phenomenon of the laser light due to fluctuation in the temperature of inert gas. The laser annealing apparatus includes a gas supply unit for supplying inert gas G to at least a laser irradiation area of a workpiece, and a gas temperature controller for regulating the temperature of the inert gas G. The gas temperature controller controls the temperature of the inert gas G supplied to the laser irradiation area so as to decrease a temperature difference between the temperature of the inert gas G and the atmospheric temperature of a space (a room R) that is disposed outside the supply area of the inert gas so the temperature controlled inert gas surrounds the optical path of the laser light.

Laser annealing apparatus

The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array or a light guide and concentrating optical systems or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate can be enhanced as much, it is possible to improve the processing ability of the laser annealing.

Laser annealing method and laser annealing device

In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beamentering a large-sized lens (long-axis condenser lens) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arraysandare reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beamentering a large-sized lens (projection lens) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arraysandare reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.

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Tokyo, Japan

Norihito Kawaguchi