Sharp Kabushiki Kaisha Corporation

Norihisa Asano

Hiroki Taniyama

Masashi Maekawa

Kazuyoshi Imae

Yoshiyuki Itoh

Disclosed is a semiconductor device provided with: lower-layer wiring formed on a substrate, an interlayer insulating film covering the lower-layer wiring, and a first upper-layer wiring line () and a second upper-layer wiring line () arranged on the interlayer insulating film and intersecting with the lower-layer wiring, and a level-difference adjustment protrusion is provided between the first upper-layer wiring line () and the second upper-layer wiring line () adjacent to a side section of the lower-layer wiring.

Semiconductor device and method for manufacturing same

Disclosed is a semiconductor device which includes a substrate, a thin film transistorhaving a first semiconductor layerA that is supported by the substrate, a thin film diodehaving a second semiconductor layerB that is supported by the substrate, and a metal layerthat is formed between the substrateand the second semiconductor layerB. The first semiconductor layerA is a laterally grown crystalline semiconductor film, and the second semiconductor layerB is a crystalline semiconductor film that contains fine crystal grains. The average surface roughness of the second semiconductor layerB is higher than the average surface roughness of the first semiconductor layerA. Consequently, the optical sensitivity of the TFD is improved and the reliability of the TFT is improved, as compared with those in the conventional semiconductor devices.

Growing community of inventors

Osaka, Japan

Norihisa Asano