Japan Display Inc.

Hitachi, Ltd.

Fujitsu Hitachi Plasma Display Limited

Hitachi Consumer Electronics Co., Ltd.

Other

Norihiro Uemura

Isao Suzumura

Hidekazu Miyake

Yohei Yamaguchi

Keizo Suzuki

Takeshi Noda

Yoshimi Kawanami

Hiroshi Kajiyama

Masayuki Shibata

Yusuke Yajima

Koji Ohira

Ikuo Ozaki

Toshiki Kaneko

Masakazu Sagawa

Arichika Ishida

Hiroto Miyake

Shirun Ho

Shunichiro Nobuki

Ikuo Hiyama

Yoshiro Mikami

Makoto Tsumura

Osamu Toyoda

Kazutaka Tsuji

Akitoyo Konno

Yutaka Akiba

Hideki Harada

Kenichi Yamamoto

Hideto Momose

Yoshinori Aono

Kiyomi Nakamura

Keigo Takeuchi

Shinichirou Ie

Naoya Tokoo

The radiographic imaging apparatus is configured so that an irradiation device is mounted on a rotary drum of a rotary gantry. A pair of X-ray sources is disposed outside the rotary drum and attached to the outer surface of the rotary drum. A pair of FPDs facing the respective X-ray sources is mounted in the irradiation device. When X-rays are irradiated, X-ray intensity information is calculated by a signal processing device based an output signal from each radiation detection element of each FPD, and stored in a memory. Based on FOV information set by an input device, an X-ray intensity acquisition device acquires multiple pieces of X-ray intensity information that are calculated based on the output signals from the radiation detection elements in small FOV areas (or large FOV areas) of the FPDs, which are included in the X-ray intensity information stored in the memory.

Radiographic imaging apparatus and particle beam therapy system

A thin film transistor includes a first oxide semiconductor, a source electrode, a drain electrode, a gate insulating film and a gate electrode. A second oxide semiconductor layer is between the first oxide semiconductor layer and the source electrode. A third oxide semiconductor layer is between the first oxide semiconductor layer and the drain electrode. The content ratio of oxygen/Indium in each of the second semiconductor layer and the third oxide semiconductor layer is equal to or larger than that of the first semiconductor layer. A thickness of each of the second semiconductor layer and the third oxide semiconductor layer is bigger than that of the first semiconductor layer.

Thin film transistor having stable threshold voltage and less parasitic capacitance, and display device using the same

According to one embodiment, a display device includes a TFT on an insulating substrate. The TFT includes a gate electrode, an insulating layer on the gate electrode, a semiconductor layer on the insulating layer, and a source electrode and a drain electrode each provided in contact with at least a part of the semiconductor layer. The source and drain electrodes have a laminated structure including a lower layer, an intermediate layer and an upper layer. The source and drain electrodes include sidewalls each including a first tapered portion on the upper layer side, a second tapered portion on the lower layer side and a sidewall protective film attached to the second tapered portion. The taper angle of the first tapered portion is smaller than that of the second tapered portion.

Display device

According to one embodiment, a display device includes thin-film transistor. The thin-film transistor includes a first semiconductor layer, a first insulating film, a gate electrode, a second insulating film, a second semiconductor layer, a first electrode and a second electrode. The gap between the bottom surface of the gate electrode and the upper surface of the first channel region of the first semiconductor layer is larger than the gap between the upper surface of the gate electrode and the bottom surface of the second channel region of the second semiconductor layer.

A thin film transistor includes, an insulating substrate, a gate electrode provided on an upper surface of the insulating substrate, a gate insulating film formed so as to cover the gate electrode, an oxide semiconductor layer provided on the gate insulating film, a channel protective layer provided at least on an upper surface of the oxide semiconductor layer, and a source electrode and a drain electrode provided so as to come into contact with the oxide semiconductor layer, wherein the channel protective layer is formed such that the film density of a portion provided so as to come into contact with the oxide semiconductor layer is higher than the film density of a portion distant from the oxide semiconductor layer.

Thin film transistor and display device using the same

To maintain good operation of a peripheral circuit using an oxide thin film transistor in a liquid crystal display panel to which photo alignment is applied, the liquid crystal display panel includes: a transparent substrate provided with an oxide thin film transistor in the periphery of a pixel portion in which pixel electrodes are arranged, to control the pixel electrodes; and an alignment film to align liquid crystal provided in the pixel portion. The alignment film is subjected to photo alignment treatment by ultraviolet irradiation. Further, an ultraviolet absorbing layer is provided so as to cover the oxide thin film transistor. For example, an alignment film is used for the ultraviolet absorbing layer to absorb the ultraviolet light for the photo aliment treatment of the alignment film, in the peripheral circuit portion for controlling the pixel electrodes, thereby preventing the threshold voltage of the oxide thin film transistor from shifting.

Liquid crystal display panel

There is provided a bottom gate channel etched thin film transistor that can suppress initial Vth depletion and a Vth shift. A thin film transistor is formed, including a gate electrode interconnection disposed on a substrate, a gate insulating film, an oxide semiconductor layer to be a channel layer, a stacked film of a source electrode interconnection and a first hard mask layer, a stacked film of a drain electrode interconnection and a second hard mask layer, and a protective insulating film.

Provided are a reliable high performance thin film transistor and a reliable high performance display device. The display device has: a gate electrode which is formed on a substrate; a gate insulating film which is formed to cover the substrate and the gate electrode; an oxide semiconductor layer which is formed on the gate electrode through the gate insulating film; a channel protective layer which is in contact with the oxide semiconductor layer and formed on the oxide semiconductor layer; and source/drain electrodes which are electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer. A metal oxide layer is formed on an upper part of the channel protective layer. The source/drain electrodes are formed to be divided apart on the channel protective layer and the metal oxide layer.

Display device using an oxide semiconductor

The present invention provides a display device having: gate electrodes formed on a transparent substrate; a gate insulating film for covering the gate electrodes; an oxide semiconductor formed on the gate insulating film; drain electrodes and source electrodes formed at a distance from each other with channel regions of the oxide semiconductor in between; an interlayer capacitor film for covering the drain electrodes and source electrodes; common electrodes formed on top of the interlayer capacitor film; and pixel electrodes formed so as to face the common electrodes, and wherein an etching stopper layer for covering the channel regions is formed between the oxide semiconductor and the drain electrodes and source electrodes, the drain electrodes are a multilayer film where a transparent conductive film and a metal film are layered on top of each other, and the drain electrodes and source electrodes make direct contact with the oxide semiconductor.

Display device and manufacturing method for same

In a bottom gate thin film transistor using a first oxide semiconductor layer as a channel layer, the first oxide semiconductor layer and second semiconductor layers include In and O. An (O/In) ratio of the second oxide semiconductor layers is equal to or larger than that of the first oxide semiconductor layer, and a film thickness thereof is thicker than that of the first oxide semiconductor layer.

A gate insulating film has a convex portion conforming to a surface shape of a gate electrode and a step portion that changes in height from a periphery of the gate electrode along the surface of the gate electrode. An oxide semiconductor layer is disposed on the gate insulating film so as to have a transistor constituting region having a channel region, a source region, and a drain region in a continuous and integral manner and a covering region being separated from the transistor constituting region and covering the step portion of the gate insulating film. A channel protective layer is disposed on the channel region of the oxide semiconductor layer. A source electrode and a drain electrode are disposed in contact respectively with the source region and the drain region of the oxide semiconductor layer. A passivation layer is disposed on the source electrode and the drain electrode.

Display device and method for manufacturing the same

The liquid crystal display apparatus includes a liquid crystal panel and the back light device for emitting the light from a light source to the liquid crystal panel through a lens. The light source includes a first LED for emitting the light of a first color, a second LED for emitting the light of a second color, a third LED for emitting the light of a third color, a fourth LED for emitting the light of the third color, a fifth LED for emitting the light of the second color, and a sixth LED for emitting the light of the first color. The first, second, third, fourth, fifth and sixth LEDs are arranged on the wiring board in such a manner as to offset the deviation of the light distribution.

Back light device, liquid crystal display apparatus and image display apparatus using the same

A plasma display device includes: a front substrate and a back substrate facing each other and interposing a discharge gap; and a plurality of discharge cells formed by the front substrate and the back substrate, wherein a mixture gas containing Xe is filled in the discharge gap, and a red, green, or blue phosphor materials is arranged in each of the discharge cells. The plasma display device performs a reset operation by, at least, a weak discharge. A crystal material is arranged in the red, green, and blue phosphor materials so as to make weak discharge firing voltages for reset discharges in respective discharge cells uniform.

Plasma display panel and display device using the same

A plasma display apparatus having a priming discharge region PDC partitioned from a display discharge cell DDC, by a traverse rib, at a side where the second electrode between the display discharge cell DDC adjacent in a row direction is adjacent; a second longitudinal rib partitioning the priming discharge region PDC; a third longitudinal rib, further partitioning a region partitioned by the second longitudinal rib into two sections; a convex electrode; and a gap connecting the display discharge cell DDC and the priming discharge cell PDC, wherein a sum of a width in a line direction of a nearly rectangular space region containing adjacent two priming discharge cells PDCs, and a pattern width of the second longitudinal rib is designed larger than a sum of a width in the row direction and a pattern width of the traverse rib.

Growing community of inventors

Tokyo, Japan

Norihiro Uemura