Jsr Corporation

Norihiro Natsume

Norihiko Sugie

Yukio Nishimura

Daita Kouno

Gouji Wakamatsu

Makoto Sugiura

Junichi Takahashi

Tsutomu Shimokawa

Hiromitsu Nakashima

Masafumi Yamamoto

Kiyoshi Murata

Toru Kajita

Keiji Konno

Nakaatsu Yoshimura

Jun Numata

Akimasa Soyano

Hiromichi Hara

Aki Suzuki

A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises [In the general formulas (1-1) and (1-2), Ris hydrogen or the like; Ris single bonds or the like; and Ris a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.

Composition for formation of upper layer film, and method for formation of photoresist pattern

A composition for forming an upper layer film includes a solvent and a resin component including a first resin having a first repeating unit and a second repeating unit. The first repeating unit is a repeating unit represented by a formula (1-1), a repeating unit represented by a formula (1-2), a repeating unit represented by a formula (1-3), or a combination thereof. The second repeating unit is a repeating unit represented by a formula (2-1), a repeating unit represented by a formula (2-2), or both thereof. The composition is to be used for forming the upper layer film in liquid immersion lithography. 

Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern

The objective of the present invention is to provide a resin for forming an upper antireflective film and a composition for forming an upper antireflective film that can reduce a standing wave effect satisfactorily and lead excellent solubility in an alkaline developer in lithography and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1,000 to 100,000 as measured by GPC method, and is soluble in an alkaline developer. (In the formulae (1) and (2), Rto Rindependently represent a hydrogen atom, &#x2014;OH, &#x2014;COOH or &#x2014;SOH, provided that all of Rto Ror Rto Rdo not represent a hydrogen atom in a molecule.) 

Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method

The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, Rrepresents hydrogen or methyl; Rand Reach represents methylene, linear or branched Calkylene, or alicyclic Calkylene; Rrepresents hydrogen or methyl; and Rrepresents a single bond, methylene, or linear or branched Calkylene.].

An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein Rand Rrepresent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.

Composition for forming antireflection film, laminate, and method for forming resist pattern

A positive-tone radiation-sensitive resin composition comprising: (A) a low molecular weight compound having at least one amino group in which the nitrogen atom has at least one hydrogen atom bonded thereto and at least one of the hydrogen atoms is replaced by a t-butoxycarbonyl group, (B) a photoacid generator, and (C-1) a resin insoluble or scarcely soluble in alkali which is protected by an acid-dissociable group and becomes soluble in alkali when the acid-dissociable group dissociates or (C-2) an alkali-soluble resin and an alkali solubility control agent is disclosed. Also disclosed is a negative-tone radiation-sensitive resin composition comprising the low molecular weight compound (A), the photoacid generator (B), an alkali-soluble resin (D), and a compound capable of crosslinking with the alkali-soluble resin in the presence of an acid(E). The composition are useful as a chemically amplified resist which effectively responds to various radiations, exhibits superior sensitivity and resolution, forms fine patterns at a high precision and in a stable manner even if the patterns are isolated line patterns.

Radiation-sensitive resin composition

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Tokyo, Japan

Norihiro Natsume