The Furukawa Electric Co., Ltd.

Norihiro Iwai

Keishi Takaki

Takeo Kageyama

Noriyuki Yokouchi

Akihiko Kasukawa

Koji Hiraiwa

Hitoshi Shimizu

Yasumasa Kawakita

Tatsuyuki Shinagawa

Hirotatsu Ishii

Kazuaki Nishikata

Suguru Imai

Kinuka Tanabe

Naoki Tsukiji

Yoshihiko Ikenaga

Takuya Ishikawa

Hirokazu Yoshikawa

Kouji Kumada

Michio Ohkubo

Masaki Funabashi

Maiko Ariga

Masayuki Iwami

Satoshi Arakawa

Yasutaka Higa

Tatsuro Kurobe

Takao Ninomiya

Eisaku Kaji

Takeyoshi Matsuda

Kageyama Takeo

Takeshi Hama

Hitoshzi Shimizu

Peter Nyakas

Setiagung Casimirus

Yasukazu Shiina

A wavelength tunable laser device includes: a laser cavity formed of a grating and a reflecting mirror including a ring resonator filter; a gain portion; and a phase adjusting portion. The grating creates a first comb-shaped reflection spectrum. The ring resonator filter includes a ring-shaped waveguide and two arms and creates a second comb-shaped reflection spectrum having peaks of a narrower full width than peaks in the first comb-shaped reflection spectrum at a wavelength interval different from that of the first comb-shaped reflection spectrum. One of the peaks in the first comb-shaped reflection spectrum and one of the peaks in the second comb-shaped reflection spectrum are overlapped on a wavelength axis, and a spacing between cavity modes is narrower than the full width at half maximum of the peaks in the first comb-shaped reflection spectrum.

Wavelength tunable laser device and laser module

A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.

Semiconductor device

Provided is an optical integrated device comprising a first waveguide that is formed on a substrate and includes a first optical path; an electrode formed on the first waveguide; a second waveguide that is formed on the substrate and includes a second optical path; and a transparent waveguide that is formed on the substrate between the first waveguide and the second waveguide, and includes a transparent core that serves as an optical path and is formed of a material having higher bandgap energy than the first optical path. The electrode is formed above the first waveguide and is not formed above the transparent waveguide, and elements including the first waveguide are optically active elements that operate according to current injected thereto.

Integrated optical device and manufacturing method of the same

A surface emitting laser is formed of a composition in which bandgap energy of layers from immediately above a current confinement layer to a second conductivity type contact layer is reduced towards the second conductivity type contact layer in a stacking direction, and a composition in which bandgap energy of layers from immediately below the current confinement layer to a first conductivity type contact layer is reduced towards the first conductivity type contact layer in a stacking direction while bypassing a quantum well layer or a quantum dot of an active layer, and includes a second conductivity type cladding layer including a material for reducing the mobility of carriers.

Surface emitting laser, surface emitting laser array, light source and optical module

A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.

Semiconductor laser element and manufacturing method thereof

According to a method of manufacturing a vertical-cavity surface-emitting semiconductor laser element in accordance with the present invention, a process of wet etching is performed for a part that is oxidized in a layer of an AlGaAs () which configures a layer having an index of refraction as lower and in which a composition of aluminum is designed to be as higher comparing to the other pairs of layers in a DBR mirror at an upper side that are formed at an inner side of a mesa post (). And then a process of filling up again is performed with making use of a layer of polyimide (). Moreover, an etchant that includes such as a hydrofluoric acid or a buffered hydrofluoric acid or an aqueous ammonia or the like is made use in order to perform such the process of wet etching.

Method of manufacturing vertical-cavity surface emitting laser

A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the active layer passes; wherein the first electrode is provided on the semiconductor layer, has an opening through which light from the active layer passes, and comprises a first electrode layer that comes in contact with and is provided on the semiconductor layer, and a second electrode layer that is provided on the first electrode layer, with the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer; and the dielectric layer is provided inside the opening such that the end section on the opening side of the first electrode layer extends from the top of the semiconductor layer to the top of the dielectric layer.

Semiconductor light emitting element and manufacturing method thereof

A method of manufacturing a surface emitting laser element of a vertical cavity type comprises sequential accumulation that accumulates a reflecting mirror of a multilayered film layer at a lower side of the substrate, and accumulates semiconductor layers onto the reflecting minor at the lower side that comprises an active layer and a contact layer. The process includes forming a first layer of dielectric substance on the contact layer, forming an electrode of an annular shape on the contact layer that has an open part to be arranged for the first layer at an inner side of the open part, and forming a second layer of dielectric substance to cover the first layer and a gap formed between the first layer and the electrode of the annular shape. The accumulated semiconductor layers are etched to form a mesa post, using the electrode of the annular shape as a mask.

Method of manufacturing vertical-cavity surface emitting laser and vertical-cavity surface emitting laser array

A method of performing a wafer level burn-in test for a plurality of surface-emitting laser devices formed on a wafer includes causing a plurality of contact electrodes arranged in a same plane with a pitch same as that of the surface-emitting laser devices being electrically connected to each other to have contact with pad electrodes of the surface-emitting laser devices, respectively, and applying a current to second electrodes of the surface-emitting laser devices and the contact electrodes. The wafer level burn-in test is performed while heating the wafer at a predetermined temperature. Laser lights emitted from the surface-emitting laser devices are monitored during the wafer level burn-in test.

Testing method of surface-emitting laser device and testing device thereof

A surface emitting laser element that includes a cylindrical mesa post in which a plurality of semiconductor layers including an active layer is grown and that emits a laser light in a direction perpendicular to a substrate surface, the surface emitting laser element including a dielectric multilayer film on a top surface of the mesa post in at least a portion over a current injection area of the active layer; and a dielectric portion that includes layers fewer than layers of the dielectric multilayer film and that is arranged on a portion excluding the portion over the current injection area on the top surface of the mesa post and on at least part of a side surface of the mesa post.

Surface emitting laser element, surface emitting laser element array, method of fabricating a surface emitting laser element

A surface emitting laser element array comprises a plurality of surface emitting laser elements () on a same substrate () each comprising a mesa post formed of a laminated structure including an active layer () for reducing a crosstalk between the surface emitting laser elements constituting the surface emitting laser element array, and for improving a high speed response, wherein each of the surface emitting laser elements () comprises a first electrode (), a second electrode () and a third electrode () that have a polarity different from that of the first electrode (); the first electrode () is arranged on the mesa post; the second electrode () is arranged on one surface of the substrate () same as that of the first electrode (); the third electrode () is arranged on the other surface of the substrate () opposite to that of the first electrode and the second electrode () and is provided as a common electrode of the surface emitting laser elements (); and an electric current is applied to the active layer () using the first electrode () and the second electrode ().

Surface emitting laser element array

In the surface emitting laser, low threshold electric current and high-power output are achieved while maintaining single mode characteristics. The surface emitting laser comprises a layered structure formed on a GaAs substrateis comprised of: a semiconductor lower DBR mirror, a cladding layer, a n-type contact layer, an active layer, an electric current constricting layer, a p-type cladding layer, a p-type contact layer, a phase adjusting layerand a dielectric upper DBR mirror The surface emitting laser should be formed such that the diameter X (&#x3bc;m) of the opening diameter of the previously mentioned electric current constricting layerand diameter Y (&#x3bc;m) of the phase adjusting layer satisfy the following relation: X+1.9&#x3bb;&#x2266;Y&#x2266;X+5.0&#x3bb; (wherein &#x3bb; indicates oscillation wavelength (&#x3bc;m) of the surface emitting laser).

Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array

A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.

Method of manufacturing vertical-cavity surface-emitting laser device and vertical-cavity surface-emitting laser device

A vertical-cavity surface-emitting (VCSEL) device has a layer structure including a top DBR mirror, an active layer, a current confinement oxide layer, and a bottom DBR mirror, the layer structure being configured as a mesa post. The current confinement oxide layer has a central current injection area and a peripheral current blocking area oxidized from the sidewall of the mesa post. The mesa post has a substantially square cross-sectional shape, thereby allowing an oxidation heat treatment to configure a substantially circular current injection area in the current-confinement oxide layer.

Vertical-cavity surface-emitting semiconductor laser device

Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.

Growing community of inventors

Tokyo, Japan

Norihiro Iwai