Semiconductor Energy Laboratory Co., Ltd.

Norihiko Seo

Shunpei Yamazaki

Akiharu Miyanaga

Toshiji Hamatani

Yasuhiko Takemura

Toshiharu Yamaguchi

A game machine for providing a game, the regularity of which cannot be easily recognized by the player, by making use of a chaotic random number produced by a random number generating means.

Game machine

A game machine for providing a game, the regularity of which cannot be easily recognized be the player, by making use of a chaotic random number produced by a random number generating means.

There is disclosed a short-channel FET which is excellent in properties and adapted for mass production. FETs of this construction can be packed at a high density. There is also disclosed a method for forming this FET. The semiconductor substrate of this FET has a plateau-shaped portion protruding from the body of the substrate. This plateau-shaped portion is substantially identical in contour with a gate electrode formed over it. The gate electrode is in register with the plateau-shaped portion. With respect to the relation of doped regions of the substrate becoming the source and drain to the channel region, the narrowest portion in the channel region is not in contact with a gate-insulating film.

Semiconductor device and method for forming the same

A game machine is provided in which the effective area for the game is not restricted even if the display area of the variable display unit is increased. The game machine comprises a variable display unit having an electronic display device, and a transparent area arranged with nails, decorations such as pinwheels, and a winning port which area is provided in front of the variable display unit.

An insulated gate device has a substrate with a surface protrusion bearing a gate electrode. A conductive substance is provided on a side of the protrusion and on the substrate, with a height not above the upper surface of the protrusion. The conductive substance may be a metallic material or a semiconductive material, and functions as source and/or drain regions for a channel region formed in a protrusion under the gate electrode. Also, the conductive substance may contact the side surface of the protrusion either directly, or indirectly through an insulating layer capable of passing tunnel current.

Growing community of inventors

Kanagawa, Japan

Norihiko Seo