Canon Kabushiki Kaisha

Norihiko Nakata

Nobutaka Ukigaya

Takehito Okabe

Satoshi Ogawa

Sho Suzuki

Takeshi Aoki

Hidemasa Oshige

Yukinobu Suzuki

Mitsuhiro Yomori

Tomoyuki Tezuka

Koji Hara

Keita Torii

Takuya Hara

Yasuhiro Kawabata

Junya Tamaki

Daichi Seto

Kenji Togo

A display apparatus includes a display device and a light transmission plate overlapping the display device. The display device has a display region. A void is provided between the display region and the light transmission plate. Between the display region and the light transmission plate, a distance G from a front surface of the display device facing the void to a main surface of the light transmission plate facing the void is greater than a height difference H of the front surface in the display region. The height difference H is greater than 1 μm.

Display apparatus, module, and equipment

A semiconductor device includes a first substrate, a semiconductor device includes a first substrate, a color filter layer over the first substrate in an effective pixel region, a second substrate over the color filter layer, a joint member joining the first and second substrates, and a pattern layer over the first substrate outside the effective pixel region. The color filter layer has a color filter material and the pattern layer has the color filter material. In a planar view with respect to a surface of the first substrate on which the joint member is disposed, the pattern layer is disposed between two portions of the joint member, the two portions being separate from and adjacent to each other. In the planar view, the joint member is not disposed between the pattern layer and an end of the first substrate closest to the pattern layer among ends of the first substrate.

Semiconductor device, display imaging apparatus, photoelectric conversion apparatus, electronic device, illumination apparatus, and moving body

Photoelectric conversion apparatus includes semiconductor layer having photoelectric converters in light-receiving region and photoelectric converters in light-shielded region, light-shielding part arranged above the semiconductor layer in the light-receiving region to surround light paths of the photoelectric converters in the light-receiving region, and light-shielding film arranged above the semiconductor layer in the light-shielded region to cover the photoelectric converters in the light-shielded region. The light-shielding part includes lower and upper ends. The light-shielding film includes lower and upper surfaces. Distance between the upper end and the semiconductor layer is larger than that between the upper surface and the semiconductor layer. Distance between the lower end and the semiconductor layer is smaller than that between the upper surface and the semiconductor layer and is larger than that between the lower surface and the semiconductor layer.

Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region

A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, patterning a resist on the hard mask layer, patterning the hard mask layer by dry-etching the hard mask layer with the patterned resist as a mask, cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer, and dry-etching the multilayered film with the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer. In the patterning the hard mask layer, dry etching is performed with a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas.

Semiconductor device and semiconductor device manufacturing method using patterning and dry etching

Growing community of inventors

Hiratsuka, Japan

Norihiko Nakata