Kyocera Corporation

Norihiko Matsushima

Ken Nishiura

Akira Murao

Hisao Arimune

Yosuke Inomata

Daisuke Nishimura

Toshifumi Sugawara

Tsuyoshi Uesugi

Shinichi Abe

Koichiro Niira

Junji Aranami

Tomonari Sakamoto

Seiji Oguri

Isamu Tanaka

Akio Yamamoto

Kazumasa Umesato

Hiromitsu Ogawa

Aki Kitabayashi

Atsuo Hatate

Jumpei Sato

Akihiro Mizumoto

Keizo Takeda

Manabu Kyuzo

The solar cell element includes a semiconductor substrate with first and second surfaces, a passivation layer being in contact with the second surface, a protective layer located on the passivation layer, a bus bar electrode, and a collecting electrode. The bus bar electrode is in contact with the second surface in a first gap portion penetrating the passivation layer and the protective layer, and is sandwiching a gap region with the passivation layer and the protective layer in a first direction along the second surface. The collecting electrode includes an electrode layer located on the protective layer, a first connecting portion located in the gap region and connecting the electrode layer and the second surface, and a second connecting portion penetrating the passivation layer and the protective layer and connecting the electrode layer and the second surface in a second gap, and is electrically connected with the bus bar electrode.

Solar cell element

A solar cell element is provided with a semiconductor substrate, a passivation layer, and an electrode. The semiconductor substrate has a first surface and a second surface that is positioned on a back side of the first surface. The passivation layer is positioned on the second surface of the semiconductor substrate. The electrode is positioned on the passivation layer and positioned in the state of being electrically connected to the semiconductor substrate. The electrode includes a linear electrode part that is positioned along a peripheral edge of the semiconductor substrate when the semiconductor substrate is seen from the second surface side in plane perspective view, and is positioned in the state of penetrating the passivation layer in a thickness direction.

Solar cell element and method for manufacturing solar cell element

The solar cell element includes a semiconductor substrate with first and second surfaces, a passivation layer located on the second surface, a protective layer located on the passivation layer, and a back-surface electrode located on the protective layer. The back-surface electrode is electrically connected to the semiconductor substrate via one or more hole portions penetrating the protective layer and the passivation layer. The protective layer includes a first region showing a tendency to increase in thickness as a distance from an inner edge portion of the hole portion and a second region surrounding the first region. A distance between a position of the first region farthest from the inner edge portion and the inner edge portion is larger than a thickness in the second region. The back-surface electrode shows a tendency to decrease in thickness on the first region as a distance from the inner edge portion.

To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion deviceincludes a substratea plurality of lower electrodeson the substratecomprising a metal element, a plurality of photoelectric conversion layerscomprising a chalcogen compound semiconductor formed on the plurality of lower electrodesand separated from one another on the lower electrodesa metal-chalcogen compound layercomprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrodeand the photoelectric conversion layeran upper electrodeformed on the photoelectric conversion layerand a connection conductorelectrically connecting, in a plurality of the photoelectric conversion layersthe upper electrodeto the lower electrodewithout interposition of the metal-chalcogen compound layer

Photoelectric conversion device and manufacturing method of the same

Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Method for producing semiconductor layer, method for producing photoelectric conversion device, and semiconductor starting material

A photovoltaic conversion element includes a one conductivity-type crystalline Si semiconductor; an opposite conductivity-type semiconductor which is joined to the crystalline Si semiconductor to form a pn junction therebetween; an electrode provided on the opposite conductivity-type semiconductor; and a depletion region formed from the side of the one conductivity-type crystalline Si semiconductor to the side of the opposite conductivity-type semiconductor across the pn junction formed therebetween. The depletion region has a first depletion region located inside the crystalline Si semiconductor and under the electrode, and the first depletion region has an oxygen concentration of 1E18 [atoms/cm] or less.

Photovoltaic conversion element and manufacturing method therefor, and photovoltaic conversion module using same

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Yasu, Japan

Norihiko Matsushima