Other

Hitachi Hokkai Semiconductor Ltd.

Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Ulsi Engineering Corp.

Hitachi Tohbu Semiconductor, Ltd.

Norihiko Kasai

Kiyoshi Inoue

Hirotaka Nishizawa

Toshio Sugano

Toshio Yamada

Masamichi Ishihara

Hidetoshi Iwai

Yasunori Yamaguchi

Jiro Sawada

Masahiro Yamamura

Seiichiro Tsukui

Tadao Kaji

Takashi Araki

Noboru Shiozawa

Shinobu Takeura

Tetsuya Hayashida

Masakatsu Gotou

Ichirou Anjou

Hiroshi Arai

Masakatsu Goto

Nobuaki Nagashima

Yoshiaki Anata

Yasushi Sekine

Isao Seki

Tetsuji Kohara

Sadao Morita

Tomoyoshi Miura

Mutsuo Tsukuda

A semiconductor chip has a quadrangle main surface, a wiring substrate, and a resin seal member for sealing the semiconductor chip, in which the resin seal member has a quadrangle main surface which confronts the main surface of the semiconductor chip. A gate cut trace portion is formed on a side face extending along a first side of the main surface of the resin seal member. A sectional area of an area between the main surface of the wiring substrate and the main surface of the resin seal member at a position outside a side face of the semiconductor chip is smaller than a sectional area of an area between the main surface of the semiconductor chip and the main surface of the resin seal member.

Semiconductor device and method of manufacturing the same

An improvement of the yield of semiconductor devices is achieved in the manufacture of a semiconductor device. The method includes forming a resin enclosure for block-molding a plurality of a semiconductor chips by placing a plurality of semiconductor chips inside a cavity of a molding die along with a substrate, and then injecting a resin from a first side to a second side of a main surface of the substrate. The plurality of semiconductor chips are mounted on the main surface of the substrate from the first side to the second side of the main surface with a predetermined spacing, the second side facing the first side. The method is characterized by the application of cleaning treatment to the main surface of the substrate before forming the resin enclosure.

Method of manufacturing a semiconductor device

A semiconductor device manufacturing method is disclosed which can reduce the cost of manufacturing an MAP type semiconductor device. According to this method, a substrate with semiconductor chips mounted at predetermined intervals in a matrix shape on a main surface thereof is clamped between a lower mold and an upper mold of a molding die, an insulating resin is injected through gates into a cavity formed on the main surface side of the substrate, air present within the cavity is allowed to escape from air vents, to form a block molding package which covers the semiconductor chips, thereafter bump electrodes are formed on a back surface of the substrate, and then the block molding package and the substrate are cut longitudinally and transversely to fabricate plural semiconductor devices. The air vents are formed by grooves provided in the substrate.

Method of manufacturing a semiconductor device in which a block molding package utilizes air vents in a substrate

Semiconductor integrated circuit device, and process and apparatus for

Growing community of inventors

Sagamihara, Japan

Norihiko Kasai