Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Norifumi Tokuda

Shigeru Kusunoki

Tadaharu Minato

Mitsuru Kaneda

Yuuko Okada

The present invention relates to a semiconductor manufacturing apparatus, and an object of the invention is to prevent breakage and deformation of semiconductor substrates without deteriorating operability in processing. In order to achieve the object, a semiconductor manufacturing apparatus has a stage () on which a semiconductor substrate () is placed, and the stage () has a first metal portion () that is made of metal and that comes in contact with the semiconductor substrate () placed thereon, and an electroconductive elastic-body portion () that is made of an electroconductive elastic body and that comes in contact with the semiconductor substrate () placed thereon. A contaminant () is embedded in the electroconductive elastic-body portion ().

Semiconductor manufacturing apparatus

A semiconductor manufacturing apparatus and a semiconductor manufacturing method, and has as one object to process a wafer easily and stably irrespective of thickness. To achieve the above object, a semiconductor manufacturing apparatus includes: an open-topped cassette that encases a semiconductor substrate; a plurality of processors for performing a predetermined processing of the semiconductor substrate; and a transporting mechanism that transports the cassette encasing the semiconductor substrate between the plurality of processors.

Semiconductor manufacturing equipment with an open-topped cassette apparatus

A semiconductor device has a semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a recess defined in the second main surface by side surfaces and a bottom surface, a semiconductor region provided in the bottom surface of the recess of the semiconductor substrate, semiconductor regions provided in the surface of a peripheral region on the second main surface side, and insulating films provided on the side surfaces of the recess to electrically insulate the semiconductor regions.

Semiconductor device

A semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate, to attain desirable electric characteristics. P type semiconductor regions and N type semiconductor regions are alternately provided with an interval therebetween, both regions in a surface of a second main surface of a semiconductor substrate. Between the P type semiconductor regions and the N type semiconductor regions, trenches formed in the surface of the semiconductor substrate are filled with insulators, thereby forming trench isolation structures. Moreover, a second main electrode is formed in contact with both the P type semiconductor regions and the N type semiconductor regions.

Semiconductor device and manufacturing method thereof

A semiconductor device includes an n-type semiconductor substrate () including a p-type collector layer () formed in a second main surface side thereof, a trench () is formed in a peripheral portion of the semiconductor substrate () so as to surround the inside and reach the collector layer () from a first main surface of the semiconductor substrate (), and a p-type isolation region () formed by diffusion from a sidewall of the trench () is provided to be connected to the collector layer (). The trench () is filled with a filling material ().

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Tokyo, Japan

Norifumi Tokuda