Hitachi, Ltd.

Hitachi Power Semiconductor Device, Ltd.

Norifumi Kameshiro

Natsuki Yokoyama

Kazuhiro Mochizuki

Masahiko Ando

Mitsuharu Tai

Hidekatsu Onose

Sanato Nagata

Keisuke Yamamoto

Hiromasa Takahashi

Kenzo Kurotsuchi

Akio Shima

Seiichi Suzuki

Haruka Shimizu

Shirun Ho

Yuji Suwa

Takuya Okuyama

Kumiko Konishi

Tadashi Okumura

Computation is made of a production plan and sequence satisfying constraint conditions using an interaction model. A system includes a storage device to store management information about specifications on each of a plurality of things to be produced and a computational device to compute a planned sequence of things to be produced in a production process to produce the plurality of things using an interaction model, based on the management information. In this system, the computational device computes an interaction model in which an assignment event of a sequential position in a production process to each of the things is assumed as a variable and a constraint condition regarding the production process is set as strength of an interaction between variables.

Generating sequence of vehicles in a vehicle production facility

An automatic display system for a gaze area has a video input unit, an object detection unit and a gaze area setting unit that sets an area containing a part or the whole of the object detected by the object detection unit, or a predetermined area in the entire video as the gaze area. A control signal corresponding to the set gaze area information is received, and a gaze area acquisition unit acquires the gaze area from the entire video according to the control signal. A video output unit outputs a video of the acquired gaze area. The video input unit, a control signal receiving unit, and the gaze area acquisition unit are disposed in the input terminal; the gaze area setting unit and the video output unit are disposed in the output terminal; and information is transmitted between the input terminal and the output terminal by wireless communication.

Automatic display system for gaze area and remote state monitoring system using the same

A device includes an input unit, a nonlinear converter, and an output unit. The nonlinear converter and the output unit are connected via a connection path having a delay mechanism that realizes a feedback loop giving a delay to a signal. The delay mechanism includes a conversion mechanism that generates a plurality of signals with different delay times using the signal output from the nonlinear converter, generates a new signal by superimposing the plurality of signals, and outputs the generated signal to the output unit.

Device and computer realizing calculation of reservoir layer of reservoir computing

There is provided a radiation detector using SiC and of a structure in which an electric field is applied to the interior of the entire SiC crystal constituting a radiation sensible layer, aiming to detect radiation while suppressing a reduction in electric signals generated in the radiation sensible layer. The radiation detector includes: a radiation sensible layer formed of silicon carbide and configured to generate an electron hole pair due to radiation entering it; a first semiconductor region in contact with a first principal surface of the radiation sensible layer and exhibiting a first impurity concentration at least in the region in contact with the radiation sensible layer; a second semiconductor region in contact with a second principal surface on the opposite side of the first principal surface and exhibiting a second impurity concentration at least in the region in contact with the radiation sensible layer; a first electrode connected to the first semiconductor region; and a second electrode connected to the second semiconductor region. The impurity concentration in the radiation sensible layer adjacent to the first semiconductor region, with the first principal surface serving as a border, is discontinuous with the first impurity concentration; the impurity concentration in the radiation sensible layer adjacent to the second semiconductor region, with the second principal surface serving as a border, is discontinuous with the second impurity concentration; and an electric field is applied to the entire radiation sensible layer in the depth direction thereof at a voltage during operation.

Radiation detector and radiation detection device using the same

An object of the present invention is to provide an artificial olfactory sensing system capable of sniffing out various odors highly sensitively. The artificial olfactory sensing system includes: plural sensor cells on a lipid membrane of each of which olfactory receptors have developed; and plural ion-sensitive field-effect transistors (ISFETs) that correspondingly exist to the sensor cells on a one-on-one basis. A response signal showing that each of the olfactory receptors of each of the sensor cells has recognized an odor molecule is converted into an electric signal by an ISFET corresponding to each of the sensor cells.

Artificial olfactory sensing system

A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to 4.4&#xd7;10cmor higher and 6&#xd7;10cmor lower and an impurity concentration in a second JTE region is set to 2&#xd7;10cmor lower in a case of a Schottky diode, and an impurity concentration in the first JTE region is set to 6&#xd7;10cmor higher and 8&#xd7;10cmor lower and an impurity concentration in the second JTE region is set to 2&#xd7;10cmor lower in a case of a junction barrier Schottky diode.

Semiconductor device with substantially equal impurity concentration JTE regions in a vicinity of a junction depth

In a semiconductor device having a silicon carbide device, a technique capable of suppressing variation in a breakdown voltage and achieving reduction in an area of a termination structure is provided. In order to solve the above-described problem, in the present invention, in a semiconductor device having a silicon carbide device, a p-type first region and a p-type second region provided to be closer to an outer peripheral side than the first region are provided in a junction termination portion, a first concentration gradient is provided in the first region, and a second concentration gradient larger than the first concentration gradient is provided in the second region.

Semiconductor device and method of manufacturing the same, power conversion device, three-phase motor system, automobile, and railway vehicle

Semiconductor device with similar impurity concentration JTE regions

A Schottky junction type semiconductor device in which the opening width of a trench can be decreased without deteriorating the withstanding voltage. The cross sectional shape of a trench has a shape of a sub-trench in which the central portion is higher and the periphery is lower at the bottom of the trench, and a p type impurity is introduced vertically to the surface of the drift layer thereby forming a pSiC region, which is formed in contact to the inner wall of the trench having the sub-trench disposed therein, such that the junction position is formed more deeply in the periphery of the bottom of the trench than the junction position in the central portion of the bottom of the trench.

Trench type Schottky junction semiconductor device and manufacturing method thereof

On a front surface of a region where a junction termination extension structure of a semiconductor device using silicon carbide is formed, a structure having an n-type semiconductor region with a concentration relatively higher than a concentration of an n-type drift layer is formed. An edge of the junction termination extension structure located on a side away from an active region is surrounded from its bottom surface to its front surface by an n-type semiconductor region. By this means, it is possible to provide a device with a low resistance while ensuring a withstand voltage, or by decreasing the resistance of the device, it is possible to provide a device with low power loss.

Semiconductor device

Reliability of a semiconductor device is improved by suppressing reverse voltage deterioration at the time of reverse bias junction barrier Schottky diode using a substrate containing SiC. In a JBS diode having an active area of 0.1 cmor more, an area of a Schottky interface at which a drift layer and a Schottky electrode are contacted can be sufficiently reduced by relatively increasing a ratio of p-type semiconductor region being a junction barrier region in an active region, and thereby deterioration in reverse voltage caused by defects existing in the drift layer is prevented.

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Tokyo, Japan

Norifumi Kameshiro