Kabushiki Kaisha Toshiba

Seoul Semiconductor Co., Ltd.

Toshiba Materials Co., Ltd.

Toshiba Silicone Co., Ltd.

Japan Field Co., Ltd.

Noriaki Yagi

Mituo Kawai

Minoru Inada

Yasutaka Imajo

Nobuhiro Saitoh

Kimiaki Kabuki

Takashi Ishigami

Masahiko Yamakawa

Toshihiro Maki

Kumpei Kobayashi

Akitsugu Kurita

Michio Satou

Takayuki Oguni

Yoshiaki Takezawa

Hiromi Shizu

Takashi Yamanobe

Shigeru Ando

Minoru Obata

Takao Sawa

Koichi Watanabe

Akihisa Nitta

Takasi Yamanobe

Tooru Komatu

Shinichi Murata

Takao Kusaka

Hiroyuki Hasebe

Yoshiyuki Isozaki

Hiromichi Horie

Michio Sato

Shusuke Inada

Takamichi Inaba

Hideo Ishihara

Yoshiharu Fukasawa

Noboru Kitamori

Yoshiyuki Yamauchi

Masanori Kibata

Yoshiko Kanazawa

Tohru Komatsu

Kazunori Yokosu

Shigeki Kajima

Hiroshi Endo

Katsumi Hisano

Kyung Hee Ye

Takashi Sano

Hideo Iwasaki

Tomiya Sasaki

Akihisa Saito

Ryoji Tsuda

Naoyuki Sori

Kazuto Yokota

Jun Momma

Kazumi Shimotori

Toshiya Sakamoto

Yoshinori Fujimori

Kiyoshi Inoue

Toshihiro c/o Intellectual Property Division Maki

Koichi C/o Toshiba Materials Co Ltd Watanabe

A light emitting device including a substrate, a first light emitter to emit light having a first color temperature, and a second light emitter to emit light having a second color temperature, in which the first light emitter has a first converter including first phosphors and a first resin, each first phosphor having different half—value widths, the second light emitter has a second converter including second phosphors and a second resin, each second phosphor having different peak wavelengths, at least one phosphor of the first converter has a half-value width of 33 nm to 110 nm, a distance between peak wavelengths of at least two phosphors of the second converter is 150 nm or less, and at least one phosphor of the first converter has a particle size of 5 um to 50 um.

White light source system

A white light source and method of use thereof, wherein control of daily rhythm and pleasant lighting can be realized. Amounts of stimulation light emitted from a white light source to the intrinsically photosensitive retinal ganglion cells (ipRGCs) and visual cells of the L cone and M cone, are defined as a melanopic irradiance, an L-cone opic irradiance, and an M-cone opic irradiance, respectively; a ratio of the amounts of the stimulation light is expressed by formula (1); and A is the ratio corresponding to the emission spectrum of the white light source, and B is the ratio corresponding to the radiation spectrum of a black body having the same color temperature as the white light source, an amount of stimulation light emitted to the ipRGC is quantitatively changed by changing the emission intensity of the white light source satisfying formula (2).Melanopic irradiance/(-cone opic irradiance+-cone opic irradiance)  (1)0.88≤≤1.11  (2).

Method for using white light source, and white light source

A light emitting device including a substrate, a first light emitter to emit light having a first color temperature, and a second light emitter to emit light having a second color temperature, in which the first light emitter has a first converter including first phosphors and a first resin, each first phosphor having different half-value widths, the second light emitter has a second converter including second phosphors and a second resin, each second phosphor having different peak wavelengths, at least one phosphor of the first converter has a half-value width of 33 nm to 110 nm, a distance between peak wavelengths of at least two phosphors of the second converter is 150 nm or less, and at least one phosphor of the first converter has a particle size of 5 um to 50 um.

A light emitting device including a substrate, a first light emitter to emit light having a first color temperature, and a second light emitter to emit light having a second color temperature, in which the first light emitter has a first converter including first phosphors and a first resin, each first phosphor having different half-value widths, the second light emitter has a second converter including second phosphors and a second resin, each second phosphor having different peak wavelengths, at least one phosphor of the first converter has a half-value width of 33 nm to 110 nm, a distance between peak wavelengths of at least two phosphors of the second converter is 150 nm or less, at least one phosphor of the first converter has a particle size of 5 um to 50 um, and a thickness of the second converter is in 0.07 mm to 1.5 mm.

According to one embodiment, there is provided a white light source system. P(&#x3bb;), B(&#x3bb;) and V(&#x3bb;) satisfy an equation (1) below in a wavelength range of 380 nm to 780 nm. The white light source system satisfies an expression (2) below in a wavelength range of 400 nm to 495 nm: 

According to one embodiment, there is provided a white light source system. P(&#x3bb;), B(&#x3bb;) and V(&#x3bb;) satisfy an equation (1) below in a wavelength range of 380 nm to 780 nm. The white light source system satisfies an expression (2) below in a wavelength range of 400 nm to 495 nm:&#x222b;(&#x3bb;)(&#x3bb;)(&#x3bb;)(&#x3bb;)&#x2003;&#x2003;(1)

According to one embodiment, there is provided a white light source system. P(&#x3bb;), B(&#x3bb;) and V(&#x3bb;) satisfy an equation (1) below in a wavelength range of 380 nm to 780 nm. The white light source system satisfies an expression (2) below in a wavelength range of 400 nm to 495 nm:&#x222b;(&#x3bb;)(&#x3bb;)(&#x3bb;)(&#x3bb;)&#x2003;&#x2003;(1)(&#x3bb;)/(&#x3bb;)&#x2264;1.8.&#x2003;&#x2003;(2)

There is provided a white light source approximating sunlight and being capable of reproducing a subtle difference in sunlight which changes depending on times and locations, and provided a white light source system of a lighting system or the like. The white light source includes a light source unit. Light which is emitted from the light source unit is a chromaticity point on a CIE chromaticity diagram and has a correlated color temperature corresponding to a chromaticity point including a deviation of &#x2212;0.005 or more to +0.005 or less with respect to a black body radiation locus, and satisfies a formula: &#x2212;0.2&#x2264;[(P (&#x3bb;)&#xd7;V (&#x3bb;))/(P (&#x3bb;max1)&#xd7;V (&#x3bb;max1))&#x2212;(B (&#x3bb;)&#xd7;V (&#x3bb;))/(B (&#x3bb;max2)&#xd7;V (&#x3bb;max2))]&#x2264;+0.2.

White light source and white light source system

According to one embodiment, there is provided a white light source system. P(&#x3bb;), B(&#x3bb;) and V(&#x3bb;) satisfy an equation (1) below in a wavelength range of 380 nm to 780 nm. The white light source system satisfies an expression (2) below in a wavelength range of 400 nm to 495 nm:  where P(&#x3bb;) is a light emission spectrum of white light, B(&#x3bb;) is a light emission spectrum of blackbody radiation of a color temperature correspond to a color temperature of the white light, and V(&#x3bb;) is a spectrum of a spectral luminous efficiency.

An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.

Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same

The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained. A film having more uniform thickness of film and inside structure can be obtained from a sputtering target prepared using the above highly purified Ti material.

Highly purified titanium material, method for preparation of it and sputtering target using it

A refractory metal silicide target is characterized by comprising a fine mixed structure composed of MSi (where M: refractory metal) grains and Si grains, wherein the number of MSi grains independently existing in a cross section of 0.01 mm of the mixed structure is not greater than 15, the MSi grains have an average grain size not greater than 10 &mgr;m, whereas free Si grains existing in gaps of the MSi grains have a maximum grain size not greater than 20 &mgr;m. The target has a high density, high purity fine mixed structure with a uniform composition and contains a small amount of impurities such as oxygen etc. The employment of the target can reduce particles produced in sputtering, the change of a film resistance in a wafer and the impurities in a film and improve yield and reliability when semiconductors are manufactured.

Refractory metal silicide target, method of manufacturing the target, refractory metal silicide thin film, and semiconductor device

Growing community of inventors

Yokohama, Japan

Noriaki Yagi