Mitsubishi Heavy Industries Limited

Other

Kabushiki Kaisha Watanabe Shoko

Noriaki Ueda

Hitoshi Sakamoto

Takashi Sugino

Saneyuki Goya

Ryuichi Matsuda

Toshihiko Nishimori

Kazuto Yoshida

Takao Abe

A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.

Power supply antenna and power supply method

A plasmais generated within a film formation chamber, and mainly a nitrogen gasis excited within the film formation chamber. Then, the excited nitrogen gasis mixed with a diborane gasdiluted with a hydrogen gas to react them, thereby forming a boron nitride filmon a substrate. At the initial stage of film formation, the nitrogen gasis supplied in excess to suppress the occurrence of an amorphous phase on the interface. As a result, the boron nitride filmimproved in moisture absorption resistance on the interface with the substrate and maintaining low dielectric constant properties is formed.

Film forming method and film forming device

A plasmais generated within a film formation chamber, and mainly a nitrogen gasis excited within the film formation chamber. Then, the excited nitrogen gasis reacted with a diborane gasdiluted with a hydrogen gas, thereby forming a boron nitride filmon a substrate. Thus, the boron nitride filmexcellent in mechanical and chemical resistance, high in thermal conductivity, and having a low relative dielectric constant &#x3ba; can be formed speedily.

The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film. Specifically, the present invention relates to a method for the formation of a thin metal film which comprises the steps of feeding a chlorine-containing raw material gas into an inlet vessel having a perforated plate made of Cu; converting the raw material gas into a plasma; etching the perforated plate with the raw material gas plasma to produce a precursor composed of the Cu component contained in the perforated plate and the chlorine contained in the raw material gas converting hydrogen gas into a plasma; after discharging the precursor from the inlet vessel passing the precursor through a rotating magnetic field so as to cause the precursor to travel toward a substrate in an accelerated manner; and passing the precursor through the reducing gas plasma to remove chlorine from the precursor and directing the resulting Cu ions onto the substrate to form a thin Cu film on the substrate as well as an apparatus for carrying out this method.

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Kobe, Japan

Noriaki Ueda