Mitsubishi Denki Kabushiki Kaisha

Noriaki Tsukada

Yasunori Tokuda

Eiji Yagyu

Tetsuya Nishimura

Motomu Yoshimura

Yoshinori Nomura

Kenzo Fujiwara

Teruhito Matsui

Keisuke Kojima

A frequency multiple outgoing light is obtained by intensity-modulating a frequency multiple incident light in frequency domain, after irradiating a pump beam to an optical recording medium consisting of photochromic material and the like to generate optical Stark effect thereon and shifting the light absorption spectrum of the optical recording medium by optical Stark effect.

Optical frequency multiple signal processing method

A light responsive semiconductor device includes a p-i-n structure incorporating a multiple quantum well structure buried within the intrinsic layer and an external resistance and voltage source serially connected across the device for adjusting a critical wavelength at which the light absorption characteristic of the device dramatically changes. By properly choosing the resistance and/or voltage, the photocurrent changes discontinuously at the critical wavelength and the photocurrent exhibits a hysteresis characteristic. A light responsive structure may include individual, serially aligned p-i-n devices or an integrated, unitary semiconductor body inculding a plurality of p-i-n devices.

Light responsive semiconductor device

A semiconductor laser having an active layer of quantum well structure, where the resonator loss is enhanced thereby to conduct an oscillation at a high quantum level.

Semiconductor laser device

Growing community of inventors

Amagasaki, Japan

Noriaki Tsukada