Nec Corporation

Honda Motor Co., Ltd.

Shindengen Electric Manufacturing Company Limited

Subaru Corporation

Noriaki Suzuki

Mizue Kitada

Takeshi Asada

Daisuke Arai

Junji Sakai

Yosuke Mizutani

Takeshi Yamaguchi

Kazuya Sakurai

Koichi Murakami

Hisanori Yanagida

Masato Edahiro

Kohei Maruyama

Sunao Torii

Shinya Kobayashi

Ryoji Mori

Teppei Komori

Shunpei Matsumura

Tetsuya Suko

Yuuji Sakaki

Yuki Yamamoto

Hiroaki Inoue

Tsuyoshi Abe

Masaaki Abe

Hidetoshi Kobori

Masaki Uekubo

Yoshinari Sugita

Masaru Aoki

Mitsutaka Suzuki

Hideharu Murano

Yusuke Yamaoka

Keizo Fuke

Masaki Morikawa

Yoshiaki Ishikawa

Katsunori Suzuki

Erika Ito

Ayaka Yamamoto

Natsuki Ito

Fumihiro Nakano

Tatsu Yoshida

Ryota Yasuda

An oil seal structure is provided for sealing between a first member including an end surface having an opening and a second member covering at least the opening with an elastic annular seal member interposed between the first member and the second member. The oil seal structure includes an annular recess that is provided in the end surface of the first member in a manner of surrounding the opening. The annular recess accommodates the seal member in the annular recess with a part of the seal member protruding from the end surface. At least a surface of the seal member is in contact with oil is covered with a covering of an oil-resistant material, and the seal member is accommodated in the annular recess.

Oil seal structure

A vehicle speed control device is configured to: acquire an AP opening rate of an accelerator pedal of a vehicle; perform deceleration control according to an AP opening rate-target driving force characteristic; when an operation element is operated for deceleration in a state where pressing on the accelerator pedal has been released, change the characteristic to a second characteristic representing, for a deceleration force to be applied due to the release of pressing on the accelerator pedal, a second deceleration force larger than a first deceleration force that is based on the before-change characteristic; and terminate the deceleration control according to the second characteristic when a target driving force that is based on a result of applying the AP opening rate to the second characteristic has reached a target driving force that is to be applied at the release of pressing on the accelerator pedal according to the before-change characteristic.

Vehicle speed control device

Provided is a control apparatus for vehicle that enables a driver to activate and deactivate a freewheeling mode at his/her discretion. A control apparatusfor vehicle switches the vehicle to a freewheeling mode in which power generated by an engineof the vehicle is not transmitted to drive shaftsof the vehicle. The control apparatusfor vehicle includes: a decelerator having a plurality of deceleration gear stages for changing deceleration of the vehicle; and a manipulatorprovided on steeringof the vehicle and configured to allow selection of the freewheeling mode in accordance with an operation performed by a driver. The vehicle transitions to the freewheeling mode upon the freewheeling mode being selected through an operation of the manipulator

Control apparatus for vehicle

A paddle shifter includes a pair of operation portions that decrease or increase the deceleration, the shift characteristic of the vehicle is set to a fixed shift mode based on the operation of the driver in response to an operation of one operation portion, a shift characteristic of the vehicle is set to a fixed shift mode based on the operation of the driver in response to an operation of the one operation portion, the shift characteristic of the vehicle is set to an automatic shift mode based on a running condition of the vehicle in response to an operation of the other operation portion, and when the one operation portion of the pair of operation portions remains in an ON state for a predetermined period of time, a change in the shift characteristic of the vehicle based on the other operation portion is activated.

Controller for vehicle

A control apparatus for controlling a vehicle includes a travel controlling unit for executing a one-pedal function for controlling both a driving force and a braking force of the vehicle according to an operation amount of an accelerator pedal, and an output controlling unit capable of displaying, on a display device of the vehicle, a first indicator indicating that the one-pedal function is enabled and a second indicator indicating that a stopped state of the vehicle is being held by a braking force of the one-pedal function.

Control apparatus and control method

A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.

Method of manufacturing MOSFET having a semiconductor base substrate with a super junction structure

A control device configured to control a vehicle is provided. The device comprises a traveling control unit configured to set an effect degree of a braking force to be given to the vehicle, and an output control unit capable of displaying, on a display device of the vehicle, an indicator representing an upper limit of a settable level of the effect degree.

Control device, control method, and non-transitory computer-readable storage medium

MOSFET, having a semiconductor base substrate with a super junction structure, method of manufacturing the MOSFET, and power conversion circuit having the MOSFET

A control device configured to control a vehicle is provided. The device comprises a traveling control unit capable of executing a one-pedal function of controlling both a driving force and a braking force of the vehicle in accordance with an operation amount of an accelerator pedal, and an output control unit of notifying a driver of an instruction to depress a brake pedal in a case in which a seatbelt is detached during execution of the one-pedal function and during traveling of the vehicle, and the vehicle stops in that state.

A control device configured to control a vehicle is provided. The device comprises: a traveling control unit capable of executing stop hold control in an automatic brake hold function and a one-pedal function; and an output control unit capable of displaying a first indicator indicating that the one-pedal function is enabled and a second indicator indicating that the automatic brake hold function is enabled. The traveling control unit exclusively executes the automatic brake hold function and the one-pedal function. The output control unit executes at least one of ending display of the second indicator and displaying the first indicator when the one-pedal function is enabled instead of the automatic brake hold function and/or ending display of the first indicator and displaying the second indicator when the automatic brake hold function is enabled instead of the one-pedal function.

Control device display indicators for one-pedal function and automatic brake hold function

A MOSFET includes: a semiconductor base substrate having n-type column regions and p-type column regions, the n-type column regions and the p-type column regions forming a super junction structure; and a gate electrode which is formed on a first main surface side of the semiconductor base substrate by way of a gate insulation film, wherein crystal defects whose density is increased locally as viewed along a depth direction are formed in the n-type column regions and the p-type column regions, using the first main surface as a reference and assuming a depth to a deepest portion of the super junction structure as Dp, a depth at which density of the crystal defects exhibits a maximum value as Dd, and a half value width of density distribution of the crystal defects as W, a relationship of 0.25Dp&#x2264;Dd&#x3c;0.95Dp and a relationship of 0.05Dp&#x3c;W&#x3c;0.5Dp are satisfied.

Semiconductor device having crystal defects and method of manufacturing the semiconductor device having crystal defects

A power semiconductor device of the present invention includes: a semiconductor base body which has a super junction structure formed of a plurality of first conductive-type columnar regions and a plurality of second conductive-type columnar regions; a plurality of trenches; gate insulation films; gate electrodes; an interlayer insulation film; contact holes formed such that two or more contact holes are formed between two trenches disposed adjacently to each other; metal plugs formed by filling the inside of the contact holes with metal; and an electrode, wherein a first conductive-type high concentration diffusion region is formed only between the trench and the metal plug disposed closest to the trench between each two trenches disposed adjacently to each other. According to the power semiconductor device of the present invention, it is possible to provide a power semiconductor device which satisfies a demand for reduction in cost and downsizing of electronic equipment, and has a large breakdown strength.

Power semiconductor device having a first and a second conductive-type columnar regions formed alternately with each other and method of manufacturing the power semiconductor device

A power semiconductor device according to the present invention has a super junction structure, and includes a low-resistance semiconductor layer, an n&#x2212;-type column region, p&#x2212;-type column regions, a base region, trenches, gate insulation films, gate electrodes, source regions, interlayer insulation films, contact holes, metal plugs, p+-type diffusion regions, a source electrode and a gate pad electrode. An active element part includes an n&#x2212;-type column region between a predetermined p&#x2212;-type column region disposed closest to a gate pad part and a predetermined n&#x2212;-type column region disposed closest to the gate pad part among the n&#x2212;-type column regions which are in contact with the trenches. The present invention provides a power semiconductor device which can satisfy a demand for reduction in cost and downsizing of electronic equipment, can lower ON resistance while maintaining a high withstand voltage, and can possess a large breakdown resistance.

Power semiconductor device and method of manufacturing power semiconductor device

A semiconductor device includes: a semiconductor base body where a second semiconductor layer is stacked on a first semiconductor layer, a trench is formed on a surface of the second semiconductor layer, and a third semiconductor layer which is formed of an epitaxial layer is formed in the inside of the trench; a first electrode; an interlayer insulation film which has a predetermined opening; and a second electrode, wherein metal is filled in the opening, the opening is disposed at a position avoiding a center portion of the third semiconductor layer, the second electrode is connected to the third semiconductor layer through the metal, and a surface of the center portion of the third semiconductor layer is covered by the interlayer insulation film.

Semiconductor device and method of manufacturing semiconductor device

A running control device changes the distribution of engine braking or regenerative braking and the distribution of friction braking in the entire requested braking force according to an operation amount of an operation element, according to whether the behavior of a vehicle during running is in a stable state or an unstable state, or becomes an unstable state in the near future with high probability.

Running control device for vehicles

Growing community of inventors

Tokyo, Japan

Noriaki Suzuki