Nitta Haas Inc.

Nitta Dupont Incorporated

Noriaki Sugita

Masashi Teramoto

Takayuki Matsushita

Shinichi Haba

Tatsuya Nakauchi

Akiko Miyamoto

Shuhei Matsuda

Mika Tazuru

Mika Chinen

A polishing composition is provided that can reduce micro-defects on a semiconductor wafer after polishing. A polishing composition includes: an abrasive; a basic compound; a wetting agent; and a non-ionic surfactant, where the surface tension Yis not higher than 64 mN/m, and the ratio of the surface tension after dilution with water by a factor of 20, Y, to the surface tension Y, denoted by Y/Y, is not lower than 1.10 and not higher than 1.40. Here, the surface tensions Yand Yare measurements at 25° C.

Polishing composition and method of polishing silicon wafer

A polishing composition capable of suppressing surface defects and reducing haze is provided. The polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; a polyalcohol; and an alkali compound. Preferably, the polishing composition further includes a non-ionic surfactant.

Polishing composition

A polishing composition that can suppress surface defects and reduce haze is provided. A polishing composition includes: abrasives; at least one water-soluble polymer selected from vinyl alcohol-based resins having a 1,2-diol structural unit; and an alkali compound, where an average particle size of particles in the polishing composition measured by dynamic light scattering is not more than 55 nm. Preferably, the polishing composition further includes a non-ionic surfactant. Preferably, the polishing composition further includes a polyalcohol.

Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the proportion of the hydroxyethyl cellulose adsorbed to the abrasive grains is 30% or more and 90% or less.

Proposed is a method for polishing a semiconductor substrate including an intermediate polishing step of polishing in such a way that the number of surface defects having heights of less than 3 nm is 45% or more of the total number of the surface defects on the surface of a semiconductor substrate, and a final polishing step of finish-polishing the semiconductor substrate after the intermediate polishing step.

Method for polishing semiconductor substrate

Proposed is a polishing composition including hydroxyethyl cellulose, water and abrasive grains, wherein the hydroxyethyl cellulose has a molecular weight of 500,000 or more and 1,500,000 or less, and the mass ratio of the hydroxyethyl cellulose to the abrasive grains is 0.0075 or more and 0.025 or less.

A polishing composition that allows polishing speed to be increased and surface roughness to be reduced is provided. The polishing composition according to the present invention includes a compound including at least an oxyethylene group or an oxypropylene group in a block polyether represented by the following general formula (1), a basic compound, and abrasives: &#x3e;N&#x2014;R&#x2014;N&#x3c; (1) where R represents an alkylene group expressed as CHand 'n' is an integer not less than 1.

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Kyoto, Japan

Noriaki Sugita